PD -91451B

IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• Fast: Optimized for medium operating VCES = 600V

frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V
G
parameter distribution and higher efficiency than
Generation 3 @VGE = 15V, IC = 17A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-cha nnel
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
TO-220AB
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17
ICM Pulsed Collector Current  120 A
ILM Clamped Inductive Load Current ‚ 120
IF @ TC = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 100
W
PD @ TC = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RqJC Junction-to-Case - IGBT ------ ------ 1.2
RqJC Junction-to-Case - Diode ------ ------ 2.5 °C/W
RqCS Case-to-Sink, flat, greased surface ------ 0.50 ------
RqJA Junction-to-Ambient, typical socket mount ----- ----- 80
Wt Weight ------ 2 (0.07) ------ g (oz)
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IRG4BC30FD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ---- ---- V VGE = 0V, IC = 250µA
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.59 1.8 IC = 17A VGE = 15V
---- 1.99 ---- V IC = 31A See Fig. 2, 5
---- 1.70 ---- IC = 17A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 6.1 10 ---- S VCE = 100V, IC = 17A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
V FM Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13
---- 1.3 1.6 IC = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 51 77 IC = 17A
Qge Gate - Emitter Charge (turn-on) ---- 7.9 12 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 19 28 VGE = 15V
td(on) Turn-On Delay Time ---- 42 ---- TJ = 25°C
tr Rise Time ---- 26 ---- ns IC = 17A, VCC = 480V
td(off) Turn-Off Delay Time ---- 230 350 VGE = 15V, RG = 23W
tf Fall Time ---- 160 230 Energy losses include "tail" and
Eon Turn-On Switching Loss ---- 0.63 ---- diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 1.39 ---- mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 2.02 3.9
td(on) Turn-On Delay Time ---- 42 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ---- 27 ---- ns IC = 17A, VCC = 480V
td(off) Turn-Off Delay Time ---- 310 ---- VGE = 15V, RG = 23W
tf Fall Time ---- 310 ---- Energy losses include "tail" and
Ets Total Switching Loss ---- 3.2 ---- mJ diode reverse recovery.
LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 1100 ---- VGE = 0V
Coes Output Capacitance ---- 74 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz
t rr Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.
---- 80 120 TJ = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25°C See Fig.
---- 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- A/µs TJ = 25°C See Fig.
During tb ---- 120 ---- TJ = 125°C 17
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 IRG4BC30FD
20

D uty cy cle: 50%

TJ = 125°C
T sink = 90° C
16
G ate drive as s pecified
Turn-on loss es inc lude
Load Current ( A )

effec ts of rev ers e rec overy

Power D iss ipa tion = 21W
12
6 0 % o f ra te d
vo lt a g e

0 A
0.1 1 10 100

f, Frequency (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)

I C , Collector-to-Emitter Current (A)

TJ = 25°C
100 100

T J = 150°C TJ = 150°C

T J = 25°C
10 10

V G E = 15V V C C = 50V
20µs PULSE WIDTH A 5µs PULSE WIDTH A
1 1
1 10 5 6 7 8 9 10 11 12 13

V C E , Collector-to-Emitter Volta ge (V) VG E , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC30FD
40 2.5
V G E = 15V V G E = 15V

V C E , Collector-to-Emitter Voltage (V)

80µs PULSE WIDTH
M axim um D C C ollector C urrent (A )

I C = 34A
30

2.0

20

I C = 17A
1.5

10

I C = 8.5A

0 1.0 A
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C as e Te m p e ra ture (°C ) T J , Junction Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
T herm al R esponse (Z thJ C )

1
D = 0 .5 0

0.2 0
PD M
0.1 0
0.1
0 .0 5 t
1
0 .0 2 t2
0 .0 1 S IN G L E P U L S E
(T H E R M A L R E S P O N S E ) N o te s :
1 . D u ty fac tor D = t /t
1 2
2 . P e a k T J = P D M x Z th J C + T C
0.01
0.00001 0.0001 0.00 1 0.01 0.1 1 10
t 1 , R e cta n gu la r P u lse D ura tio n (se c)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4BC30FD
2000 20
VGE = 0V f = 1 MHz VC E = 400V
Cies = Cge + Cgc + Cce SHORTED I C = 17A

V G E , Gate-to-Emitter Voltage (V)

Cres = Cce
1600 Coes = Cce + Cgc 16
C, Capacitance (pF)

C ies
1200 12

800 8

C oes
400 4
C res

0
A A
0
1 10 100 0 10 20 30 40 50 60

V C E , Collector-to-Emitter Voltage (V) Q g , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

2.20 10
VC C = 480V
VG E = 15V
Total Switchig Losses (mJ)

TJ = 25°C IC = 34A
Total Switchig Losses (mJ)

IC = 17A
2.10

I C = 17A

2.00 1
I C = 8.5A

1.90

R G = 23 Ω
V G E = 15V
A V C C = 480V A
1.80 0.1
0 20 40 60 80 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , Gate Resistance ( Ω ) TJ , Junction Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4BC30FD
8.0 1000
RG = 23 Ω VGGE E= 20V

I C , C o lle cto r-to -E m itte r C u rre n t (A )

TJ = 150°C T J = 125 °C
VCC = 480V
Total Switchig Losses (mJ)

VGE = 15V
6.0

100

S A FE O P E R A TIN G A R E A
4.0

10

2.0

0.0 A 1
0 10 20 30 40 1 10 100 1000
I C , Collector-to-Emitter Current (A) V C E , C o lle cto r-to-E m itte r V olta g e (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )

TJ = 150°C

10 TJ = 125°C

TJ = 25°C

1
0.4 0.8 1.2 1.6 2.0 2.4
F o rw a rd V o lta g e D ro p - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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 IRG4BC30FD
160 100

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C

120

I F = 24A
I F = 24A

I IR R M - (A )
t rr - (n s)

I F = 12A
I F = 12A
80 10
I F = 6 .0A
I F = 6.0A

40

0 1
100 1000 100 1000
d i f /d t - (A /µ s) d i f /d t - (A /µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
d i(re c)M /d t - (A /µ s)

400 1000
IF = 6.0A
Q R R - (n C )

I F = 24A
I F = 12A
I F = 12A
200 100

I F = 24A
I F = 6.0A

0 10
100 1000 100 1000
d i f /d t - (A /µ s) d i f /d t - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4BC30FD

Same type
device as
D .U.T.

90%

Vge 10%
430µF
80% VC
of Vce D .U .T. 90%
t d(off)

10%
IC 5%
tr tf
t d(on) t=5µs
E on Eoff
Fig. 18a - Test Circuit for Measurement of
E ts = (Eon +Eoff )
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O LT A G E D .U .T .
Ic
trr
Q rr =
∫ tx
id dt

10% + V g
+V g
tx
10% Irr
10% V c c
Vcc
D U T V O LT A G E
Vce
AND CURRENT V pk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
D IO D E R E C O V E R Y
W AVEFORMS
5% V c e
td(on) tr

∫
t2

∫
E on = V c e ie dt t4
t1 E rec = V d id dt
t3
t1 t2 D IO D E R E V E R S E
RECOVERY ENERG Y

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4BC30FD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O LT A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
R L=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
600 0µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit

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IRG4BC30FD
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 23W (figure 19)
ƒ Pulse width £ 80µs; duty factor £ 0.1%.
„ Pulse width 5.0µs, single shot.

Case Outline — TO-220AB

10.54 (.415) 3.78 (.149) -B - N O TE S :

2.87 (.113) 10.29 (.405) 4.69 (.185) 1 D IM E N S IO N S & T O LE R A N C IN G
3.54 (.139)
2.62 (.103) 4.20 (.165) 1.32 (.052) P E R A N S I Y 1 4 .5 M , 19 82 .
-A - 2 C O N T R O L LIN G D IM E N S IO N : IN C H .
1.22 (.048)
3 D IM E N S IO N S A R E S H O W N
6.47 (.255)
M IL L IM E T E R S (IN C H E S ).
4 6.10 (.240)
4 C O N F O R M S T O JE D E C O U T LIN E
15.24 (.600) T O -220 A B .
14.84 (.584)
1.15 (.045)
M IN LE A D A S S IG N M E N T S
1 2 3 1- GATE
3.96 (.160) 2- C O L LE C T O R
3X 3- E M IT T E R
3.55 (.140)
4- C O L LE C T O R
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
1.40 (.055) 0.69 (.027) 0.46 (.018)
3 X 1.15 (.045)
0.36 (.014) M B A M 2.92 (.115)
2.54 (.100) 2.64 (.104)
2X

CONFORM S TO JEDEC OUTLINE TO-220AB

D im en sion s in M illim ete rs an d (In ch es)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 12/98
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