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$GYDQFHG 3RZHU 026)(7 IRFZ44

FEATURES
BVDSS = 60 V
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
RDS(on) = 0.024Ω
♦ Lower Input Capacitance ID = 50 A
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 175°C Operating Temperature
TO-220
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V
♦ Lower RDS(ON): 0.020Ω (Typ.) 1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings


Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
Continuous Drain Current (TC=25°C) 50
ID A
Continuous Drain Current (TC=100°C) 35.4
IDM Drain Current-Pulsed (1) 200 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy (2) 857 mJ
IAR Avalanche Current (1) 50 A
EAR Repetitive Avalanche Energy (1) 12.6 mJ
dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns
Total Power Dissipation (TC=25°C) 126 W
PD
Linear Derating Factor 0.84 W/°C
Operating Junction and
TJ , TSTG - 55 to +175
Storage Temperature Range
Maximum Lead Temp. for Soldering °C
TL 300
Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RθJC Junction-to-Case -- 1.19
RθCS Case-to-Sink 0.5 -- °C/W
RθJA Junction-to-Ambient -- 62.5

Rev. B

©1999 Fairchild Semiconductor Corporation


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Electrical Characteristics (TC=25°C unless otherwise specified)


Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 60 -- -- V VGS=0V,ID=250µA
∆BV/∆TJ Breakdown Voltage Temp. Coeff. -- 0.063 -- V/°C ID=250µA See Fig 7
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDS=5V,ID=250µA
Gate-Source Leakage , Forward -- -- 100 VGS=20V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-20V
-- -- 10 VDS=60V
IDSS Drain-to-Source Leakage Current µA VDS=48V,TC=150°C
-- -- 100
Static Drain-Source
RDS(on) -- -- 0.024 Ω VGS=10V,ID=25A (4)
On-State Resistance

gfs Forward Transconductance -- 32.6 -- VDS=30V,ID=25A (4)
Ciss Input Capacitance -- 1770 2300
VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 590 680 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 220 255
td(on) Turn-On Delay Time -- 20 40
VDD=30V,ID=50A,
tr Rise Time -- 16 40
ns RG=9.1Ω
td(off) Turn-Off Delay Time -- 68 140
See Fig 13 (4) (5)
tf Fall Time -- 70 140
Qg Total Gate Charge -- 64 83 VDS=48V,VGS=10V,
Qgs Gate-Source Charge -- 12.3 -- nC ID=50A
Qgd Gate-Drain ( Miller ) Charge -- 23.6 -- See Fig 6 & Fig 12 (4) (5)

Source-Drain Diode Ratings and Characteristics


Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 50 Integral reverse pn-diode
A
ISM Pulsed-Source Current (1) -- -- 200 in the MOSFET
VSD Diode Forward Voltage (4) -- -- 1.8 V TJ=25°C,IS=50A,VGS=0V
trr Reverse Recovery Time -- 85 -- ns TJ=25°C,IF=50A
Qrr Reverse Recovery Charge -- 0.24 -- µC diF/dt=100A/µs (4)

Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.4mH, IAS=50A, VDD=25V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 50A, di/dt ≤ 350A/µs, VDD ≤ BV DSS , Starting TJ =25°C
(4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
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Fig 1. Output Characteristics Fig 2. Transfer Characteristics
VGS
Top : 15 V 102
102 10 V
8.0 V
ID , Drain Current [A] 7.0 V

ID , Drain Current [A]


6.0 V
5.5 V
5.0 V
101
Bottom : 4.5 V

175 oC
101

100 25 oC @ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 30 V
1. 250 µs Pulse Test
3. 250 µs Pulse Test
2. TC = 25 oC - 55 oC
100 -1 0 1 10-1
10 10 10 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
0.04

102

IDR , Reverse Drain Current [A]


Drain-Source On-Resistance

0.03 VGS = 10 V
RDS(on) , [ Ω ]

0.02
101

0.01 VGS = 20 V
@ Notes :
175 oC 1. VGS = 0 V
@ Note : TJ = 25 oC 25 oC 2. 250 µs Pulse Test

0.00 0
10
0 40 80 120 160 200 240 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
3500
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd 10 VDS = 12 V
2800
C iss
VGS , Gate-Source Voltage [V]

VDS = 30 V
Capacitance [pF]

C oss VDS = 48 V
2100

1400 5
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
700

@ Notes : ID = 50.0 A
00 1
0
10 10 0 10 20 30 40 50 60 70
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
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Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature


1.2 2.5

Drain-Source Breakdown Voltage

Drain-Source On-Resistance
BVDSS , (Normalized)

RDS(on) , (Normalized)
1.1 2.0

1.0 1.5

0.9 @ Notes : 1.0 @ Notes :


1. VGS = 0 V 1. VGS = 10 V
2. ID = 250 µA 2. ID =25 A

0.8 0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
o
TJ , Junction Temperature [ C] TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
60
103 Operation in This Area
is Limited by R DS(on)
50
ID , Drain Current [A]

ID , Drain Current [A]


10 µs
2
10 100 µs 40
1 ms
10 ms
30
101 DC

20
@ Notes :
100 1. TC = 25 oC
2. TJ = 175 oC 10
3. Single Pulse
10-1 0 0
10 101 102 25 50 75 100 125 150 175
VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC]

Fig 11. Thermal Response


Thermal Response

100
D=0.5
@ Notes :
0.2 1. Zθ J C (t)=1.19 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1 3. TJ M -TC =PD M *Zθ J C (t)
10- 1
0.05
Z JC(t) ,

PDM
0.02
0.01 t1
single pulse
t2
θ

10- 2 - 5
10 10- 4 10- 3 10- 2 10- 1 100 101
t1 , Square Wave Pulse Duration [sec]
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Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator
VGS
Same Type
50kΩ as DUT Qg
12V 200nF
300nF 10V

VDS
VGS Qgs Qgd

DUT
3mA
R1 R2

Current Sampling (IG) Current Sampling (ID)


Charge
Resistor Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms


BVDSS
LL 1
EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS

RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
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Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

--

IS
L

Driver
VGS
RG Same Type
as DUT VDD

VGS dv/dt controlled by RG


IS controlled by Duty Factor D

Gate Pulse Width


VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current


IS
( DUT ) di/dt

IRM

Body Diode Reverse Current


VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop
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In Design product development. Specifications may change in
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changes at any time without notice in order to improve
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The datasheet is printed for reference information only.