7.

1 THE FINITE-ELEMENT MODEL AND ANALYSIS OF STATIC CONTACT

RESISTANCE AND THERMAL PROCESS FOR CONTACT WITH FILM
Li Kui*, Su Xiuping*, Li Zhigang*, Lu Jianguo*, Zhang Guansheng**
*Hebei University of Technology, Tianjin(300130), China
* "Fuzhou University, Fuzhou(054002), China
ABSTRACT
Contact resistance and thermal process are very important parameters for contact. The film on
contact surface has influence on contact resistance and the thermal process. This paper has
analyzed the static contact resistance and the thermal process, and then the finite-element models
are proposed for contact with film. The contact boundary condition is automatically meet in
calculating with the finite-element method for contact without film, but it will be changed when
the contacts are covered with film. We have developed the finite-element program for contact
with film. Our results for resistance of single-spot contact are approximate to the theory value.
Finally we have analyzed the effect of the film on thermal process.
Keywords: Contact Resistance, Thermal Process, Film, Finite-Element Method

I INTRODUCTION
I1 THE FINITE-ELEMENT MODEL OF CONTACT
Contact resistance and thermal process are tow prime
RE s I sTAN CE FOR CONTA cT W I T H F I L M -
parameters for contacts and have influence on the
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performance of contact. The researchers have devoted
themselves to these models. R. Holm had developed the
theory of constriction resistance for single spot that has been
accepted widely[']. Later, other models for multi-spots have
appeared. A . Greenwood had studied the contact resistance
with statistics method['] and the multi-degree constriction
resistance has been d e ~ e l o p e d [ ~ ' ~Many
- ~ ] . researchers
developed models by using the computer simulation and
statistics methods, and try to explain the random
variability for contact resistance.
Joule heat that is produced by the current flowing
through the contact makes a rise of temperature. The
contact resistance is higher than the resistance of
conductor itself. For this reason, the temperature on the
contact spots is higher than on others. The calculation of
temperature rise is complex and the calculation may
divide into two parts. one part is for steady-state
temperature, the other is for transient temperature. In
many filed, such as in contact welding, the thermal
process analysis is necessary. Many researchers, Struaw R.
Robertson, A. Oberg, and others, have studied the contact
thermal process with
However, there is the film on the contact surface. The
film has influence on the contact resistance and the
thermal process. The contact boundary condition must be
treated when we have calculate the contact resistance and
thermal process because the contact boundary condition is
changed by the film. In this paper, we calculated and
analyzed the contact resistance and the thermal process by
the finite element method. The current field is analyzed
and the contact resistance can be calculated basis on the
results of current filed. The heat source is obtained by the
results of current filed when we analyzed the temperature
rise and the thermal process.
The film, such as oxide film and sulphide film, is formed
on the contact surface when the contact is in the atmosphere.
As a result, the electric conduction mechanism of contact
becomes complicated. The film has influence on the
distribution of current in the contact and the contact resistance.
The analysis and the calculation are of significance in theory
and practice. The film on the contact surface is divided into
conducting film and insulating film. The conducting film has
little influence on the electrical conductivity of contact spots,
but the insulating film must be fritted in order to conduct
current and the contact become metal contact or quasi-metal
contact. The insulating film may conduct current by tunnel
effect if the film is very thin. On the other hand, the shape and
the size and the number and distribution of contact spots have
influences on the conductivity of contact, so it is difficult to
calculate the contact resistance in theory. We consider the
influence of spots on the contact resistance and have
developed the finite-element method (FEM).
Fig. 1. The Sketch of Contact Model
When the film is very thin and it can conduct current by
tunnel effect, the contact resistance may be given in theory by
(I)[']:
where: p is the resistivity of contact(C2.m);
 a is the radius of contact spot(m); The contact model is shown in Fig. 1. The maximum
(3 is the resistivity of film(0m2). average temperature rise formula is (5) for contact with
symmetry structurer61.
The contact model is shown in Fig. 1. In Fig. 1 0'0'' is
the contact spot and 00' is the radius of contact spot. The
electric potential, 9 ,is a solution function for current fikd (5)
when we solve the contact resistance. It can be solved by (2).
where B is 4% ;
KT is the coefficient of heat radiation(w/m'."C );
q, is internal heat source of conduct (w/m3);
cp = 9, qs is heat source that is formed by contact
resistance(w/m*);
A is area of conduct(m2);
P is the cross section perimeter(m);
The boundary condition consists of the first condition and h is the thermal conductivity coefficient.
the second condition in usually. In some case, the second The thermal field is similar to the current field in the
condition becomes homogeneous boundary condition, such as calculation form of FEM. The thermal field may be described
AB boundary in Fig. 1. If there isn't any film on contact spoi:s, as follows:
the contact boundary condition is
[c,y $ +
= V ( h V T ) q,
(3)

For contact boundary of contact without film, the ( 6 )

boundary condition is automatically meet in FEM. Even when
the film is very thin and the thickness may be ignored, the
film contact boundary isn't automatically meet. The current
flows through the film, the electric potential on both sides (of
film is difference and the voltage drop is formed. The
boundary condition of contact spots with film is Where: The initial condition is =&
Tf is the ambient temperature of contact;
C, is the specific heat coefficient of contact
material(Ukg C );

pan, = cp1 -
y is density of contact material(kg/m3).
When there isn't any film on the contact spots, the contact
Where: (pl and (p2 is the electric potential on both sides of' boundary is (7).
film,
y , and y is the electric conductivity of contact
material,
o is the resistivity of film on the spots.
If the resistivity of film, CT , is 0, the electric potential cin
1 T,=q
- h l - dT,
-h
an,
dT2
2 -=()
dn2
Equation (7) is the boundary condition for contact without
(7)

film, it is automatically meet in FEM. If the contact is covered

both sides of film, (pl and 02,is equal. For this reason, (3) is with the film, the contact boundary is changed. Its boundary
a special equation of (4). When we calculate the contact condition is shown as follows:
resistance by FEM, the film boundary condition must be dea It
with variational method. Equation (2) and (4) constitute the PI =T2
FEM model of contact resistance for contact with film. dT,
----A =--(cp 1
-dT2 -(p )' (8)
2 1 2
dn, an, o
I11 THE FINITE-ELEMENT MODEL OF THERMAL
P R Z E X S FOR-CCNTACT WITH FILM
~

where: T, and T, are the temperature of both sides of film;

-~
cpl and cp2 is electric potential of both sides of film.
The temperature of contact rises by the Joule heat
while the current flow through the contact. However, the As the film is very thin, T, is equal to T,, but (pl isn't
Joule heat increases when the film is formed on the equal to <p2. When the current flow through the film, the
contact, and the temperature of contact obviously rises.

227
Joule heat is produced. (p, and (p2 are known functions as the A. Contact Resistance
thermal field is solved. If the film resistivity, 0 ,is 0, (pl is
equal to (p2. For this reason, (7) is a special equation of (8).
For the film boundary, the boundary condition, (S), can't
automatically meet and must be dealt with variational method
in FEM. Equation (6) and (8) constitute the FEM model of
thermal process for contact with film.

V CALCULATION EXAMPLE
~~

According to our analysis, we know that the contact

boundary is changed by the film. The film boundary isn't
automatically meet in FEM, so we must deal it with
variational method. We have programmed for contact with
film by FEM. The contact resistance can be obtained from the
electric potential in the current filed, and the maximum
temperature of contact can be obtained from thermal process
in thermal field.
We take a contact for example, the contact material is
copper and the radius of the conduct spot, a, is 0.1". If the
contact spot is single spot and is in the center of the contact,
the current flow symmetrically through the contact spot. As
the contact material is copper, we only calculated one of
contacts in FEM. The physical parameters of contact are as
follows:
The coefficient of heat radiation, K, , is 10w/m2"C;
The radius of contact, r, is 2";
The radius of spot, r,, is 0. lmm;
The resistivity, P , is 1.75 X 51 m
The thermal conductivity coefficient, h , is 40lwim "C
The specific heat capacity, Cp li is 3439205J/m3 "C.
Because the contact spot is very small, we have applied the
local refined mesh on FEM, as shown in Fig. 2.
Film Resistivity(C2.m') 0 7x10.'' 1 ~ 1 0 - ' ~
Contact Resistance FEM 0.039 2.270 3.227
(mQ> Theory 0.044 2.273 3.229
B. Thermal Process
For the thermal filed as shown in Fig. 2, the contact
boundary is dealt with method below:
1) ab, cd and od in Fig. 2 are homogeneous second
boundary condition, i. e. heat insulation;
2) bc in Fig. 2 is the third boundary condition;
3) There are two species for the conduct spot, oa. When
there isn't any film on the contact surface, the boundary
condition is heat insulation condition boundary condition.
When there is some film on the contact surface, the boundary
condition is film boundary condition as (8).
According to above process method of boundary, the
model may be applied to the thermal process for short-time,
and may also be applied to the thermal process for long-time.
In the model, the influence of film on the contact resistance
has been considered. The thermal process for contact without
film in 50A is listed in Table B. The maximum temperature
rise for contact with film in 50A is listed in Table C.

Table B The Thermal Process At The Contact SDot

I Time (s) I 5 I 11 1 18.2 I 26.8 I 37.2 I 49.6 I
0.98 1.66
Temperature( "C ) - I 2.40 I 3.21 I 4.13 I 5.16 I
Time (s) 64.6 82.5
- 104.0 129.8 160.8 197.8
Temperature( "C ) 6.32 7.63 9.08 10.7 12.4 14.2
-fx Time (s) 242.5 286.0 360.2 437.2 529.1 640.6
-
Fig. 2. The Sketch of mesh formed Temuerature("C ) 16.3 18.3 20.3 22.5 24.5 26.2
1 Time ( s ) 1773.71 933.4 I 1125 I 1355 I 1631 I 1962 I
Temperature("C) 1 2 7 . 8 I 28.8 I 29.9 I 30.7 1 31.0 I 31.1
Note: The current is 50A, and od is 500".

228

Film Resistivity(0.m’) 0 7x10-” lxlO-’o
FEM 31.2 292 403
nalvsis Result[61 32.0 253.3 348
Note: The current is 50A, and od is 500”.
From Table 3, we know that the temperature rises acutely
when the contact is covered with film. For this reason, Once
the contact is covered with film, the contact fault will be
caused. The analysis results in Table C are calculated by (5)‘‘’.
In literature (6), the results are average temperature rise of
contact in the condition that the quantity of heat, which IS
produced by the film resistance and the constriction resistance,
is regarded as uniform effect on whole contact. There is some
difference from actuality . When the film resistance increase,
the quantity of heat increases obviously. The temperature of
contact is inhomogeneous, and the average temperature should
not correctly represent the temperature of contact. In this case,
the calculation error by (5) increase and the results are smaller.
The results of FEM are higher than the results of literature (61,
and the results of FEM are able to represent the temperature of
contact.
V CONCLUSION
This paper analyzed the model of FEM for the contact
resistance and the thermal process, and developed the model
for contact with film. The contact boundary of contact spots IS
changed when the contact is covered with film. The film
boundary is dealt with variation method in FEM. The analys IS
of contact resistance and the thermal process have contributed
to the study of contact reliability and the contact welding
phenomenon. The temperature rises acutely when the contact
229
is covered with film, so the film has great influence on the
contact reliability and the contact welding. To multi-spots,
they have influence on each other, the contact resistance and
the thermal process is difficult to calculate in theory. This
problem is able to be solved by FEM. We will analyze and
calculate the contact resistance and the thermal process for
contact with film in further.
REFERENCE
(1) R.Holm. Electric Contact Theory and Application.
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Springer-Verlag, 1967.
(2) A.Greenwood, et al. “Contact of Nominally Flat
Surface”, Proceeding of the Royal Society, A. VoL-295,1966
(3) B.J.P.Willamison. “The Microworld of the Contact
Spot”, The 27th Holm Conference on Electrical Contact,
1981.
(4) Robert D.Malucci. “Multispot Model of Contacts based
on Surface Features”, The 34th Holm Conference on
Electrical Contact, 1988.
( 5 ) Micheal T. Singer. “Electrical Resistance of Random
Rough Contacting Surfaces Using Fractal Surface Modeling
the Contact Interface”. IEEE Trans. on CHMT, Vo1.-14 No.1
1991.
(6) Li Kui, Lu Jianguo, Zhang Guansheng, “Mathematical
Analysis of Thermal Process of Static Electrical Contacts”,
High Voltage Apparatus, No.1 1997.
(7) S m a n R. Robertson. “A Finite Element Analysis of the
Thermal Behavior of Contacts”, IEEE. Trans. on CHMT Vo1.-
5,No.l 1981.
(8) A. Oberg, et al. “Computer Simulation of the Electrical
and Thermal on Electrical Contacts”, The 17ThInternational
Conference on Electrical Contacts, Japan, 1994.