Rheological Characterization and Full 3D Mold Flow Simulation in Multi-Die Stack CSP of Chip Array Packaging

Min Woo Lee, Jin Young Khim, Min Yoo, JiYoung Chung and Choon Heung Lee Amkor Technology Korea 280-8, 2-ga, Seongsu-dong Seongdong-gu, Seoul, Korea email: leemw@amkor.co.kr, phone: 822-460-5293 Abstract According as high density packaging options such as 2 or more die staking or package stacking technologies are developed, the major mold process related quality concerns such as incomplete mold, exposed wires and wire sweeping are increased because of their narrow spaces between die top and mold surface and increased wiring density. So, to verify those concerns, full 3D rheokinetic simulation of mold flow has been investigated for 3 die stacking structure of 4x4 mold array, 294LD case. The rheological parameters of commercial epoxy molding compound (EMC) were acquired through the slit-die rheometer and DSC (differential scanning caloriemeter) analysis. It is found that the severe void problem is one of the challenging factors in the thin and multi-die stack packaging to determine its manufacturability. To investigate the effect of different gate types, the molding options with four different gates were evaluated. The center gate showed most severe voids but corner gate showed relatively better void performance. But in case of the wire sweeping experiment and prediction results, the center gate type had less wire sweeping than the corner gate type. In the rheological simulation results, the corner gate case indicated increased velocity, shear stress and mold pressure near to the gate inlet and final filling zone. The experimental case study and the mold filling simulation showed good match on the mold external void and wire sweeping related prediction. Introduction The pace of CSP technology development is accelerating in the semiconductor industry, driven by broad adoption of CSPs in wireless handsets and handheld electronics [1]. One of the leading packaging technologies for these CSP (Chip Scale Packaging) or SiP (System in Packaging) is the die stacking technology for memory devices or memory-logic devices which increase the functional density, while maintain or even reduce the size of the packaging [2] (ref. Figure 1). However, the multi-die stacking technology has many obstructions to overcome. Those are, for example, high density wiring, wafer thinning, die attaching process and transfer molding quality related concerns. To make matters worse, most of the stack-CSP mold is the matrix array type with thin space and wide filling area. There are several significant factors in array mold packaging. Those are thickness, size and array arrangement of stacking dies, which are very important because they may reduce mold filling process yields resulting from the limitations of complicated die stacking profile and wide mold cavity size requirement [3]. In addition to the structural complexity of multi-die stacking and increased wiring density, thin and wide mold array packaging still have much concerns for manufacturability. Besides those challenges induced by structural complexity, the fast curing rheokinetic characteristics of EMC with increased filler contents accelerates its difficulties. To get the stable moisture resistance test (MRT) performance, newly developed EMC contains nearly 90wt% filler loading and the typical gelation time of this EMC is too short (25~30 sec) to get the appropriate time window for process optimization of mold transfer. The maximum transfer time for normal mold filling process need to be finished within 15 sec. Therefore, it is not easy to define the optimum conditions for such a wide and complex mold array packaging. Those kinds of chemo-rheological characteristics of highly filled and fast curing EMC also pose problems such as incomplete mold, internal voids, unbalanced fill pattern and severe wire sweeping. In this paper, we selected the 3 die stack CSP 294LD of 4x4 mold array with four different mold gate types and performed full 3 dimensional rheokinetic simulation of mold filling behavior with the experimental validation by checking melt front advancements, mold voids and wire sweeping dependencies for each gate type. With the help of slit die rheometry which provides the similar testing environments to actual mold process (high temperature, fast measuring and proper shear rate range) and cure kinetic analysis by DSC wed like to show the validities of proposed prediction, characterization and modeling methodologies for this case study.
Figure 1 Conventional CABGA and Thin multi-die stacking or stacked SiP

Rheokinetic Characterization of Commercial EMC To characterize the rheokinetic behaviors of commercial EMC, the test samples from Sumitomo was used, together with industrial molding process performed. For the analysis, some material properties were measured such as viscosity, curing kinetics, thermal conductivity, and heat capacity etc. The curing kinetics were measured using DSC with the nonisothermal scanning mode at three different temperature ramp-up rates (5, 10, and 20C/min). The experimental data of cure conversions ( 0.0 < < 1.0 ) were fitted by numerical parameters using the Kamals relation [5,6] (ref. Equation 1~3) and the fitting parameters are shown in Table I. The experimental data and the numerical fitting line for 5, 10, 20oC/min ramping rates shows good match.

1-4244-0152-6/06/$20.00 2006 IEEE

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d = ( k1 + k 2 m )(1 ) n dt
k1 = A1 exp( E1 / T )

(1) (2) (3)

The measured viscosity is fitted using the following extended Macoskos model [8].

k 2 = A2 exp( E 2 / T )

(T , , ) =

Table I Curing kinetics fitting parameters for Kamals equations

m
5.98798E-01

n
9.95103E-01

A1
7.09009E+ 08

A2
1.90788E+ 07

g 0 ( T ) c . ) ( 0 ( T ) 1 n g 1 +( ) T 0 ( T ) = B exp( b ) T
.

+c
2

(4)

E 1 (K)
1.36581E+ 04

E 2 (K)
8.82704E+ 03

dH (J/g)
-1.94240E+ 01

where is the degree of cure, T the temperature, and n, *, B, Tb , C1 , C2 , and g are the fitting constants. The Figure 4 shows that the time dependency of the tested EMC with different isothermal testing condition. The viscosity of each different temperature show rapid increase at the very initial stage of experimental detection. As the testing temperature increased, the minimum melt viscosity is decreased while the viscosity is rapidly increased due to polymer cross-linking. The results also shows that the actual molding temperature with172oC the processing time need to be decided within 12~13 sec before the viscosity is increased to gelation in order to get stable fluidity for mold process. The experimental and numerical fitting results with equation (4) also show good match.
Figure 4 viscosity changes of very initial stage of melting and Slit die rheometer data and model equation
30
eta 172 C eta 162C eta 182C Viscosity (Pa-s) at 182C Viscosity (Pa-s) at 172C Viscosity (Pa-s) at 162C

The viscosity measured by the slit die rheometer which has been done at different temperature, shear rate, and degree of cure to get the viscosity of actual processing conditions (160~180oC) where the viscosity changes very rapidly with time.
Figure 2 Degree of cure experimental fitting results
1.2
Degree of Cure (5C/min) Degree of Cure (10C/min) Degree of Cure (20C/min) 5 min/C numerical fitting 10 min/C numerical fitting 20min/C numerical fitting

1 . Degree of Cure 0.8 0.6

0.4
.

25

0.2

viscosity (Pa.sec)

20

0 350 400 T emperature (K ) 450

15

Figure 3 shows the schematic structure of the slit die rheometer [7]. By heating the sample through in a thin diskshaped reservoir upstream of the slit, sensor detects the pressure drop and calculates the viscosity values for different testing condition under consideration. A slit of small rectangular cross-section was chosen.
Figure 3 Slit Die Rheometer

10

0 0 5 10 time (sec) 15

Figure 5 shows the acquiring method of shear rate dependency of the test EMC at 172oC measured by slit die rheometer which can provide the data set of several shear rates ranges of actual mold compound processing condition before rapid thermal curing is started. The small value of * (=0.001) indicates that the viscosity will remain power-law in the flow range of current experiment. Table II shows the summarized numerical fitting constant for model equation (4)

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Table II Rheokinetics fitting parameters

n
7.23097E-01

*
1.00000E-04

B (Pa)
2.92085E-03 g 1.15368E-01

Tb
6.39358E+ 03

(6), T represents the temperature of the molten EMC, Cp the specific heat, and k the thermal conductivity. (ref. Table III)
Table III Material data of EMC for governing equation Specific heat Specific gravity Thermal conductivity (J/kg.K) k (W/mK) (kg/m 3 )
89 798 2020 0.9

C1
9.40095E-01

C2
1.09996E+ 01

filler contetnts wt%

Figure 5 Shear rate dependency at 172oC acquired by Slit die rheometer (the slop is calculated to be power law index n)
100

Shear rate dependency at 172oC

viscosity (Pa-sec)

10

Numerical Model Generation for 3 Die stacking Structure with Mold Array Packaging The packaging structure of the 3 die stacking with 4x4 mold array was generated as the standard structures based on AutoCAD drawings. The z-directional mesh for each stacking die thickness is divided by 3 and the spacer is divided by 2. The mold clearance between top die surface and mold chase was divided by 3 meshes. The total z-directional number of mesh is 14. Figure 6 represents z-directional stacking structure of current evaluation.
Figure6 z- directional stacking structure of current evaluation
Clearance 9.5mil D3 4mil(100um)

1 10 100 1000 10000 Shear rate / frequency (1/sec)

D2 4mil(100um) Film Spacer 3mil(75um) D1 4mil(100um)

Governing Equation of Full 3D Mold filling analysis The elasticity of the epoxy molding compound is considered negligible if the degree of cure of the sample is low. Because we are only interested in the filling stage of encapsulation where the degree of cure is low enough, we will neglect the elasticity of the fluid and thus assume the flow to be generalized Newtonian (Bird et al. [9]). The governing equations for current evaluation with epoxy molding compound melt flow in a mold array cavity during transfer molding are based on the basic conservation laws as following equation(5~8). Conservation of momentum Navier-Stokes equation r rr r r & ( u ) + u u = p + + g t (5) Conservation of Energy r r (C pT ) + (C pT u ) k 2T = & 2 + ddt H t (6) Conservation of Mass Continuity equation r + u = 0 t (7) where for constant density (incompressible flow) r u = 0 (8)

Adhesive 1mil (25um)

Die attach 1mil(25um)

Mold Cap 0.7mm(28mil)

Simulated package structure

( )

Full 3 dimensional meshes for 4 kinds of different gate types and matrix array mold cavity of die stacking structures are generated to simulate the effect of each gate type (Figure 7). The center gate is the widest gate and the half gate is 1/2 of the center gate. The quarter and corner gates are 1/4 and 1/8 of the center gate, respectively. The total number of finite element meshes used for full 3D model for current studies are about 700,000~900,000, depending on the gate types. The transfer time for mold filling process was 7.4 sec (pot and runner filling time = 3.4 sec and cavity filling time 4.0sec) with optimum ram speed profile control obtained from the mold process DOE. The used simulation tool is Moldex3DTM, the reactive injection molding module [10]. Figure 8 represents the time contour plots of the melt front advancement for current evaluations. For center gate type, the melt front is parallel to the gate, but the filling patterns are influenced by the stacked die. The flow retardation is occurred on the die top surface of stacked structure which induces the void trapping phenomena along the final filling area of package edge (ref. Figure 8-a).

The kinetic equation governing the rate of chemical conversion of the epoxy resin is given by equation (1~3). r u (u , v, w) is the 3 dimensional velocity vector, and representing three components ofr the (x, y, z), is the density and p the pressure. in (5) & = is the deviatoric stress tensor which is determined by the constitutive relation (4). In

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Figure7 Finite elements mesh generation for four kinds of gate type (1) center (2) half (3) quarter (4) corner
Center gate Half gate

Quarter gate

Corner-gate

is applied. As shown in the figure (b) of 3.85 sec, the void trapping zone is slightly moved to corner side of the package edge, but still shows flow retardation on the die top due to internal stacking feature of the final filling stage. For the case of the quarter of the center gate (c), the possible void trapping zone is gradually getting reduced as the melt front advancement is changed to diagonal distribution. The melt front advancement contour pattern of the corner gate type (d) is also similar to quarter gate. In summary, at the final filling stage, the void trapping of the center gate (a) is more severe than the corner gate, because the trapping occurred zone does not have enough time to flow further to push the void out than other smaller gate. Figure 8-2 shows the short shots of the mold process results for current evaluation of center gate type (1) and corner gate type (2) which indicate that the melt front advancement patterns are similar to the simulated contour shapes.
Figure 8-2 Short shot of experimental results (1) Center gate

Mold filling results and void performance comparison

Figure 8 Melt front advancement of evaluated gate type (a) Center gate type (1, 2.67, 3.73 sec) (2) Corner gate

(b) Half gate type (1.2, 2.14, 3.85 sec) Figure 9 The comparison of the simulated and actual mold voids (a) Simulated center gate void (b) Simulated corner gate void

(c) Quarter gate type (1.2, 2.4, 3.85 sec)

(c) Mold void (center gate) (d) Corner gate type (1.2, 2.4, 3.85 sec)

(d) Mold void (corner gate)

To evaluate the void trapping phenomena along the final mold void trapping zone of package edge where the opposite side of the gate is located, three other smaller gate types are also investigated. For first, the half of the center gate case (b)

Figure 9 shows the comparison of the simulated case studies and actual mold void trapping shapes at the final filling stage of the mold filling process. The simulated results shown in figure 9-a and b is bottom side view (substrate interface) with 99% mold filling cases of void trapping

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occurred position for center gate and corner gate respectively. Figure 9-c and 9-d are the exemplary optical microscope pictures of the actual incomplete mold void occurred at mold topside, where the gold wires are exposed due to incomplete mold. The mold void or incomplete mold phenomena are closely related to the flow retardation in the relatively narrow space such as thin mold gap between mold chase and die top surface with repetitive structures of mold array patterns. Figure 10 shows the flow time contour plotting for each case and estimated possible void occurring area (a) and the number of the void acquired from experimental results (b). The void occurring positions and the flow retarding areas are quite similar to that of the experimental void positions where the contour lines are very close to each other.
Figure10 (a) Mold filling time contour plotting (prediction) and (b) the actual mold void position through experiments (about 200 unit tests for each gate type)

the case of the center gate. As the gate size is getting smaller and the gate location is changed from center to corner, the number of the void unit is significantly decreased.
Table IV statistical results of mold void evaluation through experiment
Gate Design Center (1) Half (1/2) Quarter(1/4) Corner (1/8) Total Q'ty 218 192 192 224 Void performance Total Void Exposed Wire 59 14 15 8 50 10 8 4 void unit % 27.1% 7.3% 7.8% 3.6% Exposed wire % 22.9% 5.2% 4.2% 1.8%

(a)

The predicted void trapping occurrence index is acquired by estimating the possible number of melt front trapping point for 3rd and 4th mold array from the gate. The figure 11 shows the relative comparison between experimental void occurrence which represents % void among total tested units (a) and void index estimated by mold filling simulation (b). The relative comparison showed almost similar trend.
Figure 11 The relative comparison of simulated and actual mold void. (a) Experimental void occurrence (b) Model void occurrence
30.0% 25.0% 20.0% 15.0% 10.0% 5.0% 0.0% Center Half Quarter Corner gate type

50 . void index (3rd & 4th raw) 40 30 20 10 0 center half quarter gate type octa
void unit %

(b)
2 17

3 2 3

17 17 18

3 1 2 6

Flow retardation phenomena in the same die stacking cavity region Because of the thin and narrow space in the same die stacking area below overhang, the filling of molten EMC in this area shows the flow retardation phenomena as shown in Figure 12. Mold flows under the overhang area of same die stacking region are expected to be relatively slow, which means that it has longer residence time in here and also has higher conversion and increased viscosity value according to the equation of Kamals relation (ref. equation 1~4 ).
Figure 12 Flow retardation in the same die stacking cavity region

4 2 1 1 7

3 4

Table IV shows the statistical results of void evaluation for each gate type. The center gate type has most severe void occurrence which shows 27.1% void ratio among the 218 tested units. The void locations of these data described in Table IV are identical to the results shown in Figure 10-(b). The comparison results show that the other reduced gate types have relatively less void occurred units ratio compared with

Figure 13 shows the thermosetting conversion contour for different gate types. The flow retardation in the die overhang area of same die stacking near the gate is getting more severe as the gate type is changed to center to corner.

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void occurred unit (% )

The overhang cavity region shows relatively higher conversion value (4%), while the die top area of same unit shows relatively low EMC conversion (0.4~1.0%).
Figure 13 Thermosetting conversion contour of different gate type

Figure 15 (a) The maximum shear stress value of the wire bonding area for different gate types. (b) Maximum pressure value (a) (b)
12 maximum shear stress on WB area (x10E3 Mpa) 10 8 6 4 2 0 center half quarter corner gate type
1.2 1 0.8 0.6 0.4 0.2 0 center half quarter corner gate type maximum Pressure on WB area (Mpa)

Numerical interpretation of shear stress and velocity distribution The flow induced shear stress contours of the each gate type at the final filling stage are shown as below figure 14. The standard center gate shows that the shear stress distributions are relatively homogeneous, but the gate type is changed as corner gate type, the shear stress values near the flow inlet and outlet are significantly increased than other area which may affect severe wire sweeping at this area, especially for the case of the corner gate.
Figure 14 The flow induced shear stress fields of the each gate

In addition to shear stress and pressure field differences induced by the variation of gate types, the velocity profile also showed different by the gate type. Figure 16 shows the velocity vector profiles in mold array for each gate type. Similar to the shear stress and pressure cases, the mold flow velocity is drastically increased near to the gate and final outlet as the gate type is changed from center to corner gate, while the center gate case has relatively uniform velocity vector values. But the corner gate, the unbalanced velocity distribution may cause the severe wire sweeping near to the gates and final mold filling zone. Figure 17 describes the maximum velocity values of each gate type. The maximum velocity values of center gate shows about 10 cm/sec but this value is gradually increased as the gate is getting smaller. The smallest gate, corner gate showed more than 3 times increased velocity value (34 cm/sec).
Figure 16 The velocity vector field of simulated EMC melt (a) corner gate (b) quarter gate (c) half gate (d) center gate

(a)

(b)

(c)

(d)

The maximum shear stress value on the overall mold filling area for different gate types are plotted at the figure 15(a). The maximum shear stress of corner gate near the gate inlet and outlet showed five times higher than that of the center gate which has the shear stress homogenous distribution for whole mold array area. The pressure value of the molten EMC at the final filling stage has the maximum value near the gate and the value is increased as the gate type is changed from center to corner (refer Figure 15-b).

Even though the corner gate case showed relatively good void performance during mold filling, the mechanical stress, pressure or flow velocity are much higher than that of the center gate type.

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pressure (Mpa)

Figure 17 The maximum velocity comparison for EMC melt for different gate types.
40

m umm flow axim old velocity (cm /sec)

30
max. mold flow velocity(cm/sec)

20

Wire sweeping simulation for near gate and center area for corner gate and center gate. Wire sweep analysis can be characterized as a multi-field mechanical problem covering fluid dynamics, rheology, thermal, and structure analysis. Based on the viscosity values and velocity vector data acquired from mold filling simulation of 175oC mold cavity condition, Lambs model was applied to calculate average drag forces, which will be used as wire deformation calculation.

10

0 center half quarter corner gate type

Experimental wire sweep comparison for the different gate types Figure 18 shows the actual wire sweeping results of 294LD 3 die stack case. The wire sweeping results shows that, as expected, wire sweeping of the corner gate types is more severe near to the gate and final filling area of the packages. From the simulation results, the center gate is supposed to be less positional dependencies and maintains low wire sweeping value for all area. The actual experimental results reveal that the wire sweeping value for the center gate showed less dependent on its position and the maximum wire sweeping values for the gate area, center area and final filling zone are 3~4%. But as expected in the simulation results of shear rate and velocity distribution contour, as the gate type is changed from center to corner, the maximum wire sweeping values are drastically increased as nearly 10% near to the gate inlet and final filling zone area, while the center area where relatively low shear rate and velocity applied, showed less maximum wire sweeping value as 3~4%.
Figure 18 Experimental minimum, average and maximum wire sweeping results comparison for four different gate types and its positional dependencies in mold array packaging.
Gate Area
Gate Area
10.0 9.0 8.0 7.0 wire sweep (%) 6.0 5.0 4.0 3.0 2.0 Min Max Avg

(9)
Where D: the drag force per unit length of the wire d: the diameter of the wire U: melt compounds velocity : viscosity of fluid : Fluid density CD : drag coefficient Re : Reynolds number (Re<<1, creeping flow)

The Lambs model for calculating the drag force on the wire is defined as equation (9). The number of wires for calculation is 63 for each unit and totally 1008 wires were investigated. The selected wires are extracted from the every forth wires among the actual wires exist on the top die. Following steps are the procedure of wire sweeping calculation [11]: 1) Generate wires (location, profile, mechanical property) 2) Find elements intersected by wires 3) Analyze flow data outputted by mold filling solver 4) Calculate drag forces on wires 5) ANSYS structural analysis for the selected wires 6) Post-process & calculate wire sweeping
Figure 19 wire sweeping simulation result of the center gate type : Maximum wire sweep=2.45%. The units # near the gate 1~4

Center Area

Final Filling Area

1.0 0.0 Center Half Quarter

Corner

gate type
10.0 9.0 8.0 wire sweep (%) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 Center Half Quarter Corner gate type

10.0

Center Area

Min Max Avg

9.0 8.0 7.0 wire sweep (%) 6.0 5.0 4.0 3.0 2.0 1.0 0.0

Final Filling Area

Min Max Avg

Center

Half

Quarter

Corner

gate type

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Figure 20 Simulated wire sweeping (%) for (a) center gate type-in front of gate inlet: unit #1 (b) center gate type center area of matrix array :unit #11 (c) corner gate type-in front of gate inlet : unit#1 (d) corner gate type- center area of matrix array: unit #6

wire short occurred areas and the predicted results shows good match.
Figure 22 X-ray inspection pictures and simulation results for the wire short occurred region near the gate area (# 1 unit) of corner gate type
(a) (b)

(a)

(b)

(c)

(d)

(c)

(d)

The calculated wire sweeping for all 16 units in the matrix mold array type packaging results is shown in the figure 19. The calculation result of center gate type shows homogenous wire sweeping values for all concerned units (Max. wire sweep: 2.45%). But in case of corner gate type, as shown in the figure 20, the wire sweeping values are drastically increased for unit #1 (figure 20-c) which is closest unit from the gate. In the figure 20-c) and d), the gate location is left. For the corner gate case, the maximum wire sweeping value showed 14.3%. However, the sweeping value is rapidly decreased as 3.8% in the unit #6, center area of the mold array. The figure 21 shows the comparison between experimental and simulated results for several selected units from mold array.
Figure 21 The maximum wire sweeping (%) comparison between experimental and predicted results
16 14 Maximum wire sweep (%) 12 10 8 6 4 2 0 Center gate unit#1 Corner gate unit#1 Center gate unit#11 Corner gate unit#6
Experiment Simulation

Conclusions To investigate the different gate type effects in the 4x4 mold array with 3 die stacked structure, full 3D rheokinetic simulation of mold filling was done with the rheological parameters acquired from slit-die rheometer and DSC of commercial EMC. The center gate showed severe void but corner gate as the gate size is reduced, showed relatively better performance. However, in case of wire sweeping related, the center gate type showed less wire sweeping than corner gate types. From the simulation results, corner gate types showed increased velocity, shear stress and mold pressure near the gate and final filling zone. The experimental case study and the mold filling simulation showed acceptable match on the mold void trapping and wire sweeping related prediction. Full 3D simulation methodologies enable the prediction of micro-scale mold filling behavior in the multi die stacking and other more complicated packaging structures such as SiP, PIP (package in package), molded Flip-Chip or packages with embedded electrical shielding or heat spreader for the future application. Acknowledgments The authors of this paper would like to acknowledge and thank the many unnamed contributors that made this test program possible. These include Mr. E. J. Lee (Cheil industries inc.) and D. K. Lee (ETS-soft inc.) I also want to express my heartfelt thanks to God and my co-worker J. Y. Yang. References 1. Kada, M. et al, Advancements in Stacked Chip Scale Packaging (S-CSP), Provides System-in-a-Package Functionality for Wireless and Handheld Applications, Proc of Pan Pacific Microelectronics Symposium Conf, Maui, Hawaii, Jan. 2000

Figure 22 shows the x-ray inspection pictures of wire short induced by the high shear stress and velocity near to the gate area for corner gate. The shape and sweeping range of the

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2. Smith, Lee et al, Stacked Chip-Scale Packages: They are Not Just for Cell Phones Anymore!, Chip Scale Review, July 2001, pp 53-61 3. Henry, M.W. Sze et al, Encapsulation Selection, Characterization and Reliability for Fine Pitch BGA (fpBGA) 4th Annual Flip Chip,BGA, Chip Scale Packaging '98, April 28-29,1998 4. Turng, L. S., and Wang, V. W., 1993, On the Simulation of Microelectronic Encapsulation with Epoxy Molding Compound, J. Reinforced Plastics Composites, 12, pp. 506519. 5 Kamal, M. R., and Ryan, M. E., Injection and Compression Molding Fundamentals, A. I. Isayev, ed., Chap. 4, (Marcel Dekker, New York., 1987) 6. Kamal, M. R, and Ryan, M. E, The behavior of thermosetting compounds in injection molding cavities, Polym. Eng. Sci., vol. 20, pp. 869867, 1992. 7. Han, S., Wang, K. K., Hieber, C. A., and Cohen, C., 1997, Characterization of the Rheological Properties of a FastCuring Epoxy Molding Compound, J. Rheol., 42, pp. 177195. 8. Castro, J. M., and Macosko, C. W., 1980, Kinetics and Rheology of Typical Polyurethane Reaction Injection Molding Systems, SPE Tech. Pap., 26, pp. 434438. 9. Bird, R. B., Armstrong, R. C., and Hassager, O., Dynamics of Polymeric Liquids, Vol. 1, (WileyInterscience, New York , 1987). 10. InPack/Moldex3D-RIM Users Manuel 11. Su, Francis et al, An Efficient Wire Sweep Analysis Solution for Practical Application, ECTC 2000, pp.15211525.

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