Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

QUICK REFERENCE DATA

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK453 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 14 75 175 0.16 MAX. -100B 100 13 75 175 0.20 UNIT V A W C

PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL
d

1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 -100A 14 10 56 75 175 175 MAX. 100 100 30 -100B 13 9 52 UNIT V V V A A A W C C

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2 UNIT K/W K/W

April 1998

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 C VDS = 100 V; VGS = 0 V; Tj = 125 C VGS = 30 V; VDS = 0 V VGS = 10 V; BUK453-100A BUK453-100B ID = 5 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.15 0.15 MAX. 4.0 10 1.0 100 0.16 0.20 UNIT V V A mA nA

DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 5 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 4.0 TYP. 5.5 660 140 60 10 25 60 40 3.5 4.5 7.5 MAX. 825 200 100 20 40 90 55 UNIT S pF pF pF ns ns ns ns nH nH nH

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 14 A ; VGS = 0 V IF = 14 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V MIN. TYP. 1.2 90 0.6 MAX. 14 56 1.5 UNIT A A V ns C

AVALANCHE LIMITING VALUE

Tmb = 25 C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 14 A ; VDD 50 V ; VGS = 10 V ; RGS = 50 MIN. TYP. MAX. 70 UNIT mJ

April 1998

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

120 110 100 90 80 70 60 50 40 30 20 10 0

PD%

Normalised Power Derating

1E+01

Zth j-mb / (K/W)

ZTHX53

1E+00

0.5 0.2 0.1 0.05 0.02 0

P D tp D= tp T t

1E-01

20

40

60

80 100 Tmb / C

120

140

160

180

1E-02 1E-07

1E-05

1E-03 t/s

1E-01

1E+01

Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)

ID% Normalised Current Derating

Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

ID / A VGS / V = 15 20 BUK453-100A 10 8

120 110 100 90 80 70 60 50 40 30 20 10 0

28 24 20 16 12

6 8 4 4
0 20 40 60 80 100 Tmb / C 120 140 160 180

5 0 2 4 VDS / V 6 8 10

Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V
ID / A
VD S/ ID

Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS

RDS(ON) / Ohm 5 4.5 5.5 6 6.5 7 7.5 0.4 8 10 20 VGS / V = BUK453-100A

100

BUK453-100
A B

1.0

RD

O S(

= N)

tp = 10 us 100 us DC 1 ms 10 ms 100 ms

0.8

10

0.6

0.2

0.1 1

10
VDS / V

0
100

12 16 ID / A

20

24

28

Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp

Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS

April 1998

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

28 24 20 16 12 8

ID / A

BUK453-100A
4

VGS(TO) / V max.

Tj / C =

25 150
3 min. 2 typ.

4 0
0

4 VGS / V

10

-60

-20

20

60 Tj / C

100

140

180

Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
ID / A SUB-THRESHOLD CONDUCTION

7 6 5 4 3 2

gfs / S

BUK453-100A

1E-01

1E-02

1E-03

2%

typ

98 %

1E-04

1E-05

1 0 0 4 8 12 16 ID / A 20 24 28
1E-06 0 1 2 VGS / V 3 4

Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V

a Normalised RDS(ON) = f(Tj)

Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS

2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0

10000

C / pF

BUK4y3-100

1000 Ciss

100

Coss Crss

-60

-20

20

60 Tj / C

100

140

180

10 0 20 VDS / V 40

Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 5 A; VGS = 10 V

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

April 1998

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

VGS / V 12 10 8 6 4 2 0 0 2 4 6 8 10 QG / nC 12

BUK453-100 VDS / V =20 80

120 110 100 90 80 70 60 50 40 30 20 10 0

WDSS%

14

16

20

40

60

80

100 120 Tmb / C

140

160

180

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 14 A; parameter VDS
IF / A BUK453-100A

Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 14 A

30

+
L
20

VDD

VDS VGS

-ID/100 T.U.T. R 01 shunt

10 Tj / C = 150 25

0 RGS

0 0 1 VSDS / V 2

Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS VDD )

April 1998

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

4,5 max 10,3 max

1,3

3,7 2,8
5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54

0,9 max (3x)

0,6 2,4

Fig.17. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".

April 1998

Rev 1.100

Philips Semiconductors

Product Specification

PowerMOS transistor

BUK453-100A/B

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

April 1998

Rev 1.100