Hpices

I n st r u ct io n

Graphical User Interface

Inpu t F ile ( . S P )
Title Circuit description
*CURRENTSOURCE MS1 N1N62 VBP VDD VDD PCH W=3.2U L=1U M=3 MS2 N1N62 VBP 0 0 NCH W=0.4U L=20U M=1 MS3 VBN N1N62 VDD VDD PCH W=1U L=1U M=1 *************** constant current source **************************** MC1 VBP VBP VDD VDD PCH W=2.5U L=1U M=1 MC2 VBN VBP VDD VDD PCH W=2.5U L=1U M=1 MC3 VBP VBN N1N27 0 NCH W=1.4U L=1U M=1 MC4 VBN VBN 0 0 NCH W=0.7U L=1U M=1 RC1 0 N1N27 42.66K ******************************************************************** .op .temp=75 .LIB "mm0355v.l" tt ******************************************************************** VDD VDD 0 pwl(0u 0v 10u 3.3v) .tran 0.01u 20u .probe v(vbp) v(vbn) imc3=par('i1(mc3)') imc4=par('i1(mc4)') +ims3=par('-i1(ms3)') ims2=par('i1(ms2)') ******************************************************************** .END

Set condition for simulation Source Analyze and measure End

Inpu t F ile ( . S P )
Circuit description Node and Element Identification 1. Either Names or Numbers 2. Numbers: 1 to 99999999 3. 0 is ALWAYS ground Passive elements R ohm C -farad ( RC1 0 N1N27 42.66K ) Scale Factors F = 1e-15 U = 1e-6 MEG = X = 1e6 P = 1e-12 M = 1e-3 G = 1e9 L henry

N = 1e-9 K = 1e3 T = 1e12

Inpu t F ile ( . S P )
Circuit description
MS1 MOS Name N1N62 MOS VBP MOS VDD MOS VDD MOS Node(B) PCH MOS Type W=3.2U L=1U MOS Size M=3 Parallel Number

Node(D) Node(G) Node(S)

MS1

Inpu t F ile ( . S P )
Circuit description
MS1 N1N62 VBP VDD VDD PCH W=3.2U L=1U M=3 MS2 N1N62 VBP 0 0 NCH W=0.4U L=20U M=1 MS3 VBN N1N62 VDD VDD PCH W=1U L=1U M=1 *************** constant current source *********************** MC1 VBP VBP VDD VDD PCH W=2.5U L=1U M=1 MC2 VBN VBP VDD VDD PCH W=2.5U L=1U M=1 MC3 VBP VBN N1N27 0 NCH W=1.4U L=1U M=1 MC4 VBN VBN 0 0 NCH W=0.7U L=1U M=1 RC1 0 N1N27 42.66K ******************************************************************

Inpu t F ile ( . S P )
Set condition for simulation .OP 1. 2. 3. 4. 5. Prints Node voltages Source Currents Power Dissipation at the Operating Point Semiconductor device currents, conductances, capacitances

.TEMP

Operating temperature LIB "mm0355v.l" tt Process file

Inpu t F ile ( . S P )
Source DC Sources VDD VDD 0 3.3V I1 1 0 5m AC Sources Vin 1 0 DC 1.2V

AC 1V

Time Varying (Transient) Pulse v1 v2 td tr tf pw period (V1 1 0 pulse 0 5v 5ns 5ns 5ns 10ns 30ns)

Inpu t F ile ( . S P )
Source Piece-Wise Linear Vin VGate 0 PWL (0 0v 5n 0v 10n 5v 13n 5v 15n 2.5v +22n 2.5v 25n 0 30n 0 R)

SIN WAVE Vin 3 0 SIN ( 0 1 100X 0 0) 0v offset, Peak of 1v, freq of 100 MHz, 0 damping, 0 delay

Inpu t F ile ( . S P )
Analyze and measure Transient Analysis . tran1ns 100ns Transient analysis is made and printed every 1ns for 100ns. . tran .1n 25n 1n 40n start=10ns Calculation is made every .1ns for the first 25ns, and then every 1ns until 40ns. The printing and plotting begin at 10ns. . tran10ns 1us sweep cload POI 3 1p 5p 10p Calculation is made every 10ns for 1us at three cload. (POI Points of Interests)

Inpu t F ile ( . S P )
Analyze and measure DC Analysis .dc vin 0.25 5.0 0.25 Sweep Vin from .25 to 5v by .25v increments .dc R1 1k 10k .5k sweep temp lin 5 25 125 DC analysis for each value of temp, with a linear sweep of temp between 25 and 125 (5 points). Sweeping R1 from 1K to 10K by .5K increments.

Inpu t F ile ( . S P )
Analyze and measure AC Analysis .ac dec10 1K 100meg Freq sweep 10 points per decade for 1KHz to 100MHz .ac lin100 1 100 Linear Sweep 100 points from 1hz to 100Hz .ac dec10 1 10K sweep cload lin 20 1p 10p AC analysis for each value of cload, with a linear sweep of cload between 1pf and 10pf (20 points). Sweeping frequency 10 points per decade from 1Hz to 10KHz.

Inpu t F ile ( . S P )
Analyze and measure

.measure .measure tran ivddavg avg i(vdd) from=15u to=20u) .probe .probe v(vbp) v(vbn) ims3=par('-i1(ms3)'))

O u tpu t F ile ( . st0 ; ru n statu s)

O u tpu t F ile ( . lis ; o u tpu t listing )

O u tpu t F ile ( . m t#

; m easu re d ata)

O u tpu t d ata

Analysis data, transient Analysis data, dc Analysis data, ac .sw# .ac#

.tr#

O u tpu t w av es ( . d c )
RC1 0 N1N27 R1 .param R1=42.6K .dc R1 20K 60K 5K

O u tpu t w av es ( . d c )

O u tpu t w av es ( . tran )
.tran 0.01u 20u sweep TEMP lin 3 10 VDD VDD 0 pwl(0u 0v 10u 3.3v) 30

O u tpu t w av es ( . tran )
vbn

vdd

O u tpu t w av es ( . ac )
. . . v+ v+ 0 dc 0.5v ac 1v v- v- 0 dc 0.5v ac 0v .probe ac vdb(vout,v+) .probe ac vp(vout) . . . .AC DEC 10 0 1000X

O u tpu t w av es ( . ac )
Gain

O u tpu t w av es ( . ac )
Phase

O u tpu t w av es ( . ac )

Gain

Phase