Comparison of Full and Analytic Simulations

Salim Aoulmit, Lakhdar Dehimi, Achour Saadoune (LMSM Laboratory Biskra U) Craig Buttar, Dima Maneuski (Glasgow U) Chris Bowdery, Michal Koziel, Andr Sopczak (Lancaster U)
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Motivation
Further understanding of the ISE Simulation Results (Full Simulation) for the 2-phase CP-CCD. Development of Analytical Model and comparison with Full Simulation. Studying the effect of Occupancy. Longer term: Fast CTI determination over a larger range of temperatures.
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Introduction
Recall: good agreement between Analytical Model and 3-phase CCD58 Full Simulation. Difference between 3-phase and 2-phase: - The shift time is tsh=1/2*f
- Factor of 2 (2 nodes) instead of 3 (3-nodes).

Effect of occupancy on CTI value is introduced by correlation of waiting time and clock frequency.
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Model (ref : T. Hardy IEEE 98)

emission time only in the following differential equation :

The model considers the effect of a single trapping level and include the

dnt nt = dt e

where n t is the density of filled traps

Traps initially filled

c << t sh

N t t join CTI = 3 e ns

e temit e

where temit = t w is the total emission time from the previous packet t join is the time periode during which the charges can join the parent packet
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Hardy paper considers : filled traps

t sh >> c

Or in our case:

t sh << c

Analytical model is given by:

Nt t sh c tjoin e temit e CTI = 2 * 1 e e e ns

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)(

)
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Input Parameters
Trap concentration: 1e11/cm3 Occupancy occ: 1% Signal charge density Ns: 4.5e14/cm3 Frequency f: 50, 25, 10 MHz Shift time: 1/2f Waiting time tw: 1/(occ*f)

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0.17eV traps. 50MHz

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0.44eV traps. 50MHz

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Occupancy Study
Simultaneous change of occupancy occ and waiting time tw. At very high temperatures, the emission time is very short, and independent of the occupancy traps are empty when the next charge package arrives.

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Occupancy 0.17eV traps. 50MHz

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10

Occupancy 0.17eV traps. 25MHz

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Occupancy 0.44eV traps. 50MHz

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Occupancy 0.44eV traps. 25MHz

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Occupancy 0.44eV traps. 10MHz

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Conclusions/Outlook
CP-CCD: Glasgow and Lancaster full simulations agree well. For 0.17eV traps: analytical and full simulations also agree well, and for low temperature region analytical model predicts CTI values. For 0.44eV traps, analytical simulations agree much better with full simulations compared to CCD-58. Reason: Improvement to analytical model: tjoin used for 0.44eV is larger than the one used for 0.17eV. Also improvement for CCD-58 agrrement possible. Occupancy study is consistent with Konstantins work (PhD thesis pp57-58). Further comparisons with full simulation needed.
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