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IRF640, SiHF640

Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single
D

FEATURES
200 0.18

Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available

RoHS*
COMPLIANT

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

TO-220AB

S S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)


PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 200 20 18 11 72 1.0 580 18 13 125 5.0 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf in Nm A UNIT V

Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12). c. ISD 18 A, dI/dt 150 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91036 S11-0509-Rev. B, 21-Mar-11 www.vishay.com 1

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF640, SiHF640
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.0 C/W UNIT

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)


PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS

VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 200 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 11 Ab VDS = 50 V, ID = 11 Ab

200 2.0 6.7

0.29 -

4.0 100 25 250 0.18 -

V V/C V nA A S

VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5

1300 430 130 14 51 45 36 4.5 7.5

70 13 39 nH ns nC pF

VGS = 10 V

ID = 18 A, VDS =160 V, see fig. 6 and 13b

VDD = 100 V, ID = 18 A, Rg = 9.1 , RD = 5.4 , see fig. 10b

Between lead, 6 mm (0.25") from package and center of die contact

300 3.4

18 A 72 2.0 610 7.1 V ns C

TJ = 25 C, IS = 18 A, VGS = 0 Vb TJ = 25 C, IF = 18 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91036 S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF640, SiHF640
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

ID, Drain Current (A)

ID, Drain Current (A)

101

VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top

101

150 C

25 C 100

100

4.5 V 20 s Pulse Width TC = 25 C 10-1 4


91036_03

20 s Pulse Width VDS = 50 V 5 6 7 8 9 10

10-1
91036_01

100

101

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 C

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance (Normalized)

ID, Drain Current (A)

101

VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top

3.0 2.5 2.0 1.5 1.0 0.5

ID = 18 A VGS = 10 V

4.5 V

100 20 s Pulse Width TC = 150 C 10-1 100 101

0.0 - 60 - 40 - 20 0

20 40 60 80 100 120 140 160

91036_02

VDS, Drain-to-Source Voltage (V)

91036_04

TJ, Junction Temperature (C)

Fig. 2 - Typical Output Characteristics, TC = 150 C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91036 S11-0509-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF640, SiHF640
Vishay Siliconix

3000 2500

ISD, Reverse Drain Current (A)

Capacitance (pF)

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss

150 C 25 C 101

2000 1500 1000 500 0 100 101 Coss Crss

100 VGS = 0 V 0.50 0.70 0.90 1.10 1.30 1.50

91036_05

VDS, Drain-to-Source Voltage (V)

91036_07

VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

VGS, Gate-to-Source Voltage (V)

ID = 18 A VDS = 160 V

103
5 2

Operation in this area limited by RDS(on) 10 s 100 s 1 ms 10 ms TC = 25 C TJ = 150 C Single Pulse 0.1
2 5

ID, Drain Current (A)

16

VDS = 100 V VDS = 40 V

102
5 2

12

10
5 2

1
5

4
For test circuit see figure 13

0 0
91036_06

0.1

15

30

45

60

75
91036_08

10

102

103

QG, Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

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Document Number: 91036 S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF640, SiHF640
Vishay Siliconix

VDS VGS 20 RG

RD

D.U.T. + - VDD

ID, Drain Current (A)

16 10 V 12
Pulse width 1 s Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS 90 %

0 25
91036_09

50

75

100

125

150 10 % VGS td(on) tr td(off) tf

TC, Case Temperature (C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

10

Thermal Response (ZthJC)

0 0.5 0.2 0.1 0.05 0.02 0.01

0.1

PDM Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-4 10-3 10-2 0.1 1 10

10-2

10-3 10-5
91036_11

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91036 S11-0509-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF640, SiHF640
Vishay Siliconix

L Vary tp to obtain required IAS RG VDS tp

VDS VDD

D.U.T I AS

+ -

V DD

VDS

10 V tp 0.01 IAS
Fig. 12b - Unclamped Inductive Waveforms

Fig. 12a - Unclamped Inductive Test Circuit

1400

EAS, Single Pulse Energy (mJ)

1200 1000 800 600 400 200 0 VDD = 50 V 25 50 75 100

ID 6.0 A 11.0 A Bottom 18.0 A Top

125

150

91036_12c

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator Same type as D.U.T.


50 k
12 V

10 V QGS

QG
0.2 F

0.3 F

QGD D.U.T.

+ -

VDS

VG

VGS
3 mA

Charge
IG ID Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

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Document Number: 91036 S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF640, SiHF640
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit


+ Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer

D.U.T.

Rg

dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor D D.U.T. - device under test

+ VDD

Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va

D.U.T. lSD waveform Reverse recovery current

Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt

VDD

Re-applied voltage Inductor current

Body diode forward drop

Ripple 5 % Note a. VGS = 5 V for logic level devices

ISD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91036.

Document Number: 91036 S11-0509-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice


Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 11-Mar-11

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