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4AK18

Silicon N-Channel Power MOS FET Array

ADE-208-1203 (Z) 1st. Edition Mar. 2001 Application


High speed power switching

Features
Low on-resistance R DS(on) 0.38 , VGS = 10 V, I D = 1 A R DS(on) 0.53 , VGS = 4 V, I D = 1 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver, solenoid driver and lamp driver

4AK18
Outline

SP-10

3 D 4 G 2G

5 D 6 G

7 D 8 G

9 D

12 34 56 78 9 10

1S

S 10

1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain

Absolute Maximum Ratings (Ta = 25C) (1 Unit)


Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25C)* Pch* Tch Tstg
2 2 1

Rating 60 20 2.5 10 2.5 28 4 150 55 to +150

Unit V V A A A W W C C

4AK18
Electrical Characteristics (Ta = 25C) (1 Unit)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 20 1.0 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 1.2 Typ 0.25 0.40 2.0 240 115 35 4 15 80 40 1.0 70 Max 10 100 2.0 0.38 0.53 Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0 dIF/dt = 50 A/s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 1 A VGS = 10 V*1 ID = 1 A VGS = 4 V*1 ID = 1 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30

Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)

4AK18
Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) 5 4 3 2 1 30 Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation

20

10

25 75 50 100 125 Ambient Temperature Ta (C)

150

50 100 125 25 75 Case Temperature TC (C)

150

Maximum Safe Operation Area 100 30 10


O is per lim at ite ion d in by th R is

Typical Output Characteristics 5 4


10 V 5V 4V 3.5 V Pulse Test

Drain Current ID (A)

10 s
ar ea

Drain Current ID (A)

3
3V

) ot s s sh 0 m (1 10 1 n s tio ) m ra C 10 pe 5 O =2 C D (T C PW

3 1.0 0.3

DS

(o

n)

2.5 V VGS = 2 V

Ta = 25C 0.1

0
0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V)

6 2 4 8 10 Drain to Source Voltage VDS (V)

4AK18
Typical Transfer Characteristics 5
VDS = 10 V Pulse Test 75C TC= 25C Drain to Source Saturation Voltage VDS (on) (V) 25C

Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6
5A Pulse Test

4
Drain Current ID (A)

1.2

0.8
2A

0.4

ID = 1 A

3 1 2 4 Gate to Source Voltage VGS (V)

6 2 4 8 10 Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance RDS (on) ()

Static Drain to Source on State Resistance RDS (on) ()

Static Drain to Source on State Resistance vs. Drain Current 5


Pulse Test

Static Drain to Source on State Resistance vs. Temperature 1.0


Pulse Test

2 1.0 0.5
10 V VGS = 4 V

0.8
ID = 2 A

0.6
VGS = 4 V

1A

0.4
5A

0.2 0.1 0.05 0.2

0.2

VGS = 10 V

1 A, 2 A

2 0.5 1.0 5 10 Drain Current ID (A)

20

0 40

80 0 40 120 Case Temperature TC (C)

160

4AK18
Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 10 5 Reverse Recovery Time trr (ns) VDS = 10 V 25C Pulse Test TC = 25C 500 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test Body to Drain Diode Reverse Recovery Time

200 100 50

2 1.0 0.5 75C

20 10 5 0.2

0.2 0.1 0.05

0.1

0.2 2 0.5 1.0 Drain Current ID (A)

0.5 1.0 2 5 10 Reverse Drain Current IDR (A)

20

Typical Capacitance vs. Drain to Source Voltage 1000 300 Capacitance C (pF) 100 30 10 3 1 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Ciss Coss Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz

Dynamic Input Characteristics


100 80 VDD = 50 V 25 V 60 VDS 40 20 VDD = 50 V 25 V 10 V 2 VGS ID = 2 A 8 4 10 V 12 20 16 Gate to Source Voltage VGS (V)

Crss

4 6 8 Gate Charge Qg (nc)

10

4AK18
Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 100 Reverse Drain Current IDR (A) td (off) 50 Switching Time t (ns) tf 20 tr 10 5 td (on) 2 1 0.05 VGS = 10 V VDD = 30 V PW = 2s, duty < 1 %

5 4 Pulse Test

10 V 15 V

2 5V 1 VGS = 0, 5 V

0 0.1 0.5 1.0 0.2 2 Drain Current ID (A) 5

0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V)

4AK18
Package Dimensions As of January, 2001
Unit: mm
26.5 0.3 4.0 0.2 10.0 0.3 2.5

1.82

2.54

1.4

0.55 0.1

10.5 0.5

1.5 0.2

0.55 0.06

+0.1

10

Hitachi Code JEDEC EIAJ Mass (reference value)

SP-10 2.9 g

4AK18
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.

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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.


Colophon 2.0

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