ELECTRONIC FUNDAMENTAL AND DIGITAL TECHNIQUE - I

OBJECTIVE QUESTIONS

1. What is the radix (base) of decimal, binary, octal and hexadecimal no. system a. 2, 10, 8 and 16 respectively c. 10, 2, 16 and 8 respectively b. 10, 2, 8 and 16 respectively d. 2, 10,16 and 8 respectively 2. What is the 1s and 2s complement of 110 a. 101 and 010 resp. c. 001 and 100 resp. b. 001 and 010 resp. d. 101 and 100 resp. 3. Which are the universal gates a. OR Gate and AND Gate c. NAND Gate and NOR Gate b. NAND Gate and OR Gate d. None of the above 4. Which is the true statement for OR Gate a. the output is high when both inputs are low b. the output is low when both inputs are high c. the output is low when any one input is high d. None of the above 5. What is the binary equivalent of (85)10 a. 1100101 b. 1101010 c. 1010110 d. 1010101 6. What will be the BCD representation of decimal digit 33? a. 0111 0001 c. 0011 0011 b. 0001 0001 d. NTA 7. What will be the output wave of given gate when inputs are following waves A & B

a. b. c. 8. Which is the symbol for OR gate a. 9. Which is the bubble gate a. NOT gate b. NOR gate b. c. c. AND gate d. OR gate d. none d. None of the above

ELECTRONIC FUNDAMENTAL AND DIGITAL TECHNIQUE I 2

10. What is the octal equivalent of (15)10 a. (27)8 b. (17)8 c. (16)8 d. (26)8 11. Which statement is wrong about Carbon? a. It is a Semiconductor b. It has ve temp. coefficient c. It has 4 electrons in valence band d. It is used as a semiconductor 12. What is the position of donor level in compare to Fermi Level? a. Up towards the conduction band c. Down towards the conduction band b. Up towards the valence band d. Down towards the valence band 13. One binary digit known as? a. DME c. Nibble b. Byte d. Bit 14. MTCS regarding Boron and arsenic a. Boron is donor and Arsenic is accepter c. Boron is accepter and Arsenic is donor b. Boron and Arsenic are Donor 15. N- type semiconductor posses the property similar like a. Metallic wire c. Diode b. Insulator coating d. NTA 16. MTCS regarding Zener breakdown a. It will occur in Reverse bias b. It will occur in Forward bias c. zener voltage is independent of the applied potential d. a and c are correct 17. Depletion layer will form within the PN Jn due to a. Drifting b. Recombination c. Diffusion d. Tunneling 18. Which diode handled with caution to prevent damage by heat and static electricity a. Zener Diode c. Varator Diode b. Tunnel Diode d. Gunn Diode 19. Reverse bias current flows due to a. Minority Charge carrier c. As in a & measured in mA b. Majority charge carrier d. As in b & measured in A 20. Which statement is true a. Zener Breakdown will occur after avalanche breakdown b. Zener breakdown will occur in RB and avalanche breakdown will occur in FB c. Ge diode is more stable at high temp. compare to Si d. NTA 21. Immobile Ions a. Charge formed inside intrinsic semiconductor b. Charge used for conduction in PN jn diode c. This charge will accommodate near the edge of PN jn diode d. It is not participate for conduction 22. When doping will be high depletion layer will be a. No depletion layer b. Wider c. Narrower d. Depends upon barrier potential 23. Tunnel diode is a. RB diode c. As in a & it is heavily doped b. FB diode d. As in b & it is heavily doped

ELECTRONIC FUNDAMENTAL AND DIGITAL TECHNIQUE I 2

24. Esaki Diode is a. Lightly doped approx .00001mm c. As in a & depletion layer approx 1000 mm

b. Heavily doped approx 1000 times d.

As in b & depletion layer approx .00001 mm

25. What will be the output for given combination gate equivalent to

a. OR gate c. NAND gate b. AND gate d. XOR gate 26. What will be the output for NOT gate input is 01010101? a. 00000000 c. 11111111 b. 01010101 d. 10101010 27. 2 Nibble = Bits a. 2 Bits b. 4 Bits c. 8 Bits d. 4 byte 28. MTCS regarding IMPATT Diode a. It is a microwave diode b. It utilizes the delay time required for attending an avalanche condition c. It utilizes the time to produce a negative resistance characteristic d. ATA 29. Which of the following is not a octal number. a. 19 b. 77 c. 15 d. 101 30. A NOR gate is ON only when a. All input are ON c. Any one input is ON b. All input are OFF d. None of the above 31. The most widely used semiconductor in electronics device is a. Germanium c. Copper b. Silicon d. Carbon 32. The depletion region of semiconductor diode is due to a. Reverse biasing c. Crystal doping b. Forward biasing d. Migration of mobile carrier 33. MTICS A varactor Diode a. Has variable capacitance b. Utilizes the transition capacitance of a Jn. c. Has always a uniform doping d. Is always used as an automatic freqn. Control device 34. Mark the incorrect statement An Schottky diode a. Has no depletion Layer c. Has Fast recovery time b. Has Metal-semiconductor Jn d. Is bipolar Device 35. When reverse bias voltage of varactor diode is increased, its a. Capacitance decrease c. Negative resistance increases b. Leakage current decrease d. Depletion zone decreases 36. A Diode that has no depletion layer and operates with hot carrier is called a. Schottky Diode b. Gunn Diode

ELECTRONIC FUNDAMENTAL AND DIGITAL TECHNIQUE I 2

c. Step Recovery Diode 37. An XOR gate produces an output only when inputs are a. High b. Low 38. Identify the diode

d. PIN diode c. Different d. Same

a. Zener Diode b. Tunnel Diode 39. Which statement is true regarding PIN diode a. When FB it offers variable resistance b. When RB it offers infinite resistance c. Both a and b are correct 40. Step recovery diode is a e. Type of Voltage Variable Capacitor Diode f. It has graded doping profile h. ATA

c. Varactor diode d. Schottky Diode

d. None of the above g. It also called Snap Diode

40. In silicon diode FB condition upto the potential 0.7 it follows the law a. Lenz Law b. Ohms Law c. Faraday Law d. kircoffs