MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR16PM

OUTLINE DRAWING
10.5 MAX 5.2

Dimensions in mm

2.8

17 5.0

1.2
TYPE NAME VOLTAGE CLASS

3.20.2

13.5 MIN

3.6

1.3 MAX

0.8

2.54

2.54

8.5
0.5

2.6

IT (RMS) ...................................................................... 16A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized:Yellow Card No. E80276(N) File No. E80271

123 2

Measurement point of case temperature

1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL

TO-220F

APPLICATION Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets refrigerator washing machine electric fan, other general purpose control applications

MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V

Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg Viso

Parameter RMS on-state current Surge on-state current I2t for fusing

4.5

Conditions Commercial power frequency, sine full wave 360 conduction, Tc=71C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Ratings 16 160 106.5 5.0 0.5 10 2 40 ~ +125 40 ~ +125

Unit A A A2s W W V A C C g V

Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 T2 G terminal to case

2.0 2000

1. Gate open.

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
4

Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Tj=125C, VD=1/2VDRM Junction to case 3 Tj=125C

Test conditions Tj=125C, VDRM applied Tc=25C, ITM=25A, Instantaneous measurement

Min.

Typ.

Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 3.0

Unit mA V V V V mA mA mA V C/ W V/s

Tj=25C, VD=6V, RL=6, RG=330

Tj=25C, VD=6V, RL=6, RG=330

0.2 10

2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms (inductive load)

1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=8.0A/ms 3. Peak off-state voltage VD=400V

SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c

TIME

TIME TIME VD

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS 103

SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A)

RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102

7 5 3 2

102 7 5 3 2 101 7 5 3 2

Tj = 125C Tj = 25C

100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V)

CONDUCTION TIME (CYCLES AT 60Hz)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS (, AND )

100 (%)

GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE

3 2 VGM = 10V
GATE VOLTAGE (V)

PG(AV) = 0.5W PGM = 5W

GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)

101 7 5 3 VGT = 1.5V 2 100 7 5 3 2

IGM = 2A

IRGT III

IFGT I, IRGT I

IFGT I, IRGT I, IRGT III VGD = 0.2V 101 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)

101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)

GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE

100 (%)

GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)

103 7 5 4 3 2 102 7 5 4 3 2

TYPICAL EXAMPLE

TRANSIENT THERMAL IMPEDANCE (C/W)

102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)

101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)

TRANSIENT THERMAL IMPEDANCE (C/W)
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2

MAXIMUM ON-STATE POWER DISSIPATION

ON-STATE POWER DISSIPATION (W)

103

NO FINS

40 35 30 360 CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20

102

101

100

101 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz)

RMS ON-STATE CURRENT (A)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160

CASE TEMPERATURE (C)

140 120 100 80 60

AMBIENT TEMPERATURE (C)

CURVES APPLY REGARDLESS OF CONDUCTION ANGLE

ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 120 120 t 2.3 100 100 t 2.3 60 60 t 2.3

360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A)

RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)

AMBIENT TEMPERATURE (C)

ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS OF 120 CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A)

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE

HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 40

LACHING CURRENT VS. JUNCTION TEMPERATURE

100 (%)

HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)

LACHING CURRENT (mA)

DISTRIBUTION

+ T2 , G TYPICAL EXAMPLE

+ T2 , G+ TYPICAL T2 , G EXAMPLE

40

80

120

160

JUNCTION TEMPERATURE (C)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
Refer to the page 6 as to the product guaranteed maximum junction temperature 150C

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

100 (%)

BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE

100 (%)

BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C

160 TYPICAL EXAMPLE 140

BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )

BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)

120 100 80 60 40 20 0 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)

120 III QUADRANT 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT

CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)

COMMUTATION CHARACTERISTICS 7 TYPICAL 5 EXAMPLE 3 Tj = 125C 2 IT = 4A = 500s VD = 200V 101 f = 3Hz 7 5 MINIMUM 3 CHARAC2 TERISTICS VALUE 100 7 0 10
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD

GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
100 (%)

TYPICAL EXAMPLE IFGT I IRGT I IRGT III

I QUADRANT

III QUADRANT 2 3 5 7 101 2 3 5 7 102 2 3

GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)

RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)

GATE CURRENT PULSE WIDTH (s)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6

6V V

A RG

6V V

A RG

TEST PROCEDURE 1 6

TEST PROCEDURE 2

6V V

A RG

TEST PROCEDURE 3

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
The product guaranteed maximum junction temperature 150C (See warning.)

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR16PM

OUTLINE DRAWING
10.5 MAX 5.2

Dimensions in mm

2.8

17 5.0

1.2
TYPE NAME VOLTAGE CLASS

3.20.2

13.5 MIN

3.6

1.3 MAX

0.8

2.54

2.54

8.5
0.5

2.6

IT (RMS) ...................................................................... 16A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized:Yellow Card No. E80276(N) File No. E80271

123 2

Measurement point of case temperature

1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL

TO-220F

APPLICATION Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets refrigerator washing machine electric fan, other general purpose control applications
(Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.

MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V

Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg Viso

Parameter RMS on-state current Surge on-state current I2t for fusing

4.5

Conditions Commercial power frequency, sine full wave 360 conduction, Tc=96C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Ratings 16 160 106.5 5.0 0.5 10 2 40 ~ +150 40 ~ +150

Unit A A A2s W W V A C C g V

Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 T2 G terminal to case

2.0 2000

1. Gate open.

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
The product guaranteed maximum junction temperature 150C (See warning.)

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
4

Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ #

Test conditions Tj=150C, VDRM applied Tc=25C, ITM=25A, Instantaneous measurement

Min.

Typ.

Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 3.0

Unit mA V V V V mA mA mA V C/ W V/s

Tj=25C, VD=6V, RL=6, RG=330

Tj=25C, VD=6V, RL=6, RG=330

Tj=125C/150C, VD=1/2VDRM Junction to case 3 Tj=125C/150C

0.2/0.1 10/1

2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms (inductive load)

1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=8.0A/ms 3. Peak off-state voltage VD=400V

SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c

TIME

TIME TIME VD

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS 103

ON-STATE CURRENT (A) SURGE ON-STATE CURRENT (A)

RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102

7 5 3 2

102 7 5 3 2 101 7 5 3 2 100 0.5 1.0

Tj = 150C

Tj = 25C

1.5

2.0

2.5

3.0

3.5

4.0

ON-STATE VOLTAGE (V)

CONDUCTION TIME (CYCLES AT 60Hz)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
The product guaranteed maximum junction temperature 150C (See warning.)

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS (, AND )

GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE

100 (%)

3 2 VGM = 10V

PG(AV) = 0.5W PGM = 5W

GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)

101 7 5 3 VGT = 1.5V 2 100 7 5 3 2

IGM = 2A

103 7 5 4 3 2 102 7 5 4 3 2

TYPICAL EXAMPLE

IRGT III

IFGT I, IRGT I

101 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)

101 60 40 20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)

GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE

100 (%)

GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)

103 7 5 4 3 2 102 7 5 4 3 2

TYPICAL EXAMPLE

TRANSIENT THERMAL IMPEDANCE (C/W)

102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)

101 60 40 20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)

MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)

MAXIMUM ON-STATE POWER DISSIPATION

TRANSIENT THERMAL IMPEDANCE (C/W)

7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2

NO FINS

ON-STATE POWER DISSIPATION (W)

103

40 35 30 360 CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20

102

101

100

101 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz)

RMS ON-STATE CURRENT (A)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
The product guaranteed maximum junction temperature 150C (See warning.)

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160

CASE TEMPERATURE (C)

140 120 100 80 60

CURVES APPLY REGARDLESS OF CONDUCTION ANGLE

AMBIENT TEMPERATURE (C)

ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY 120 REGARDLESS OF CONDUCTION ANGLE 100 80 60 120 120 t2.3 100 100 t2.3 60 60 t2.3

360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A)

RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A)

80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)

AMBIENT TEMPERATURE (C)

ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS OF 120 CONDUCTION ANGLE RESISTIVE, 100 INDUCTIVE LOADS

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 5 3 TYPICAL EXAMPLE 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 60 40 20 0 20 40 60 80 100 120 140160 JUNCTION TEMPERATURE (C)

HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 60 40 20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 40

LACHING CURRENT VS. JUNCTION TEMPERATURE DISTRIBUTION

+ T2 , G TYPICAL EXAMPLE

100 (%)

HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)

LACHING CURRENT (mA)

+ T2 , G+ TYPICAL T2 , G EXAMPLE

40

80

120

160

JUNCTION TEMPERATURE (C)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
The product guaranteed maximum junction temperature 150C (See warning.)

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

100 (%)

BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE

100 (%)

BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) 160 140 TYPICAL EXAMPLE Tj = 125C

160 TYPICAL EXAMPLE 140

BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )

BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)

120 100 80 60 40 20 0 60 40 20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)

120 III QUADRANT 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT

100 (%)

CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)

BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 140 TYPICAL EXAMPLE Tj = 150C

COMMUTATION CHARACTERISTICS (Tj = 125C) 102 7 5 3 2

SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD

BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )

120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT III QUADRANT

101 7 MINIMUM 5 CHARACTERISTICS 3 VALUE 2 100 7

TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz

III QUADRANT

I QUADRANT

5 7 101

2 3

5 7 102

2 3

RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)

CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s)

COMMUTATION CHARACTERISTICS (Tj = 150C) 102 7 5 3 2 101 7 5 3 2 100 7

SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD

GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
100 (%)

GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)

TYPICAL EXAMPLE Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz

TYPICAL EXAMPLE IFGT I IRGT I IRGT III

I QUADRANT III QUADRANT MINIMUM CHARACTERISTICS VALUE 5 7 102 2 3

5 7 101

2 3

RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)

GATE CURRENT PULSE WIDTH (s)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR16PM
The product guaranteed maximum junction temperature 150C (See warning.)

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6

RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC

LOAD 6V V A RG 6V V A RG C1 R1 C1 = 0.1~0.47F R1 = 47~100 C0 R0 C0 = 0.1F R0 = 100

TEST PROCEDURE 1 6

TEST PROCEDURE 2

6V V

A RG

TEST PROCEDURE 3

Mar. 2002

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