Vishay Semiconductors
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
3
94 9308
13623
Test Conditions
Tamb 60 C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
50
300
150
65 to +150
Unit
V
V
V
mA
mW
C
C
Symbol
RthJA
Value
300
Unit
K/W
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BFR91A
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
VCE = 20 V, VBE = 0
VCB = 20 V, IE = 0
VEB = 2 V, IC = 0
IC = 1 mA, IB = 0
IC = 50 mA, IB = 5 mA
VCE = 5 V, IC = 30 mA
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage two
tone intermodulation test
Third order intercept point
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Test Conditions
VCE = 5 V, IC = 30 mA, f = 500 MHz
VCB = 5 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
VCE = 8 V, ZS = 50 , f = 800 MHz,
IC = 5 mA
VCE = 8 V, ZS = 50 , f = 800 MHz,
IC = 30 mA
VCE = 8 V, IC = 30 mA, ZS = 50 ,
ZL = ZLopt, f = 800 MHz
VCE = 8 V, IC = 30 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MH,
ZS = ZL = 50
VCE = 8 V, IC = 30 mA, f = 800 MHz
Symbol
fT
Ccb
Cce
Ceb
F
2.3
dB
Gpe
14
dB
V1 = V2
280
mV
IP3
32
dBm
Min
Typ
6
0.4
0.3
1.5
1.6
Max
Unit
GHz
pF
pF
pF
dB
BFR91A
Vishay Semiconductors
Common Emitter SParameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified
S11
VCE/V
IC/mA
10
f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
LIN
MAG
0.92
0.78
0.64
0.51
0.45
0.41
0.37
0.34
0.32
0.79
0.54
0.40
0.30
0.27
0.25
0.22
0.21
0.20
0.63
0.35
0.25
0.20
0.18
0.17
0.16
0.15
0.15
S21
ANG
deg
22.1
61.3
92.7
128.0
146.3
161.4
177.9
159.7
149.7
31.8
78.6
107.8
138.4
153.8
167.2
175.1
157.8
149.4
43.0
91.7
117.7
145.2
160.0
171.7
173.5
153.9
148.4
LIN
MAG
6.38
5.42
4.38
3.19
2.65
2.27
1.85
1.58
1.44
13.51
9.24
6.44
4.30
3.50
2.98
2.41
2.06
1.88
21.15
11.55
7.47
4.85
3.93
3.32
2.70
2.30
2.09
S12
ANG
deg
162.8
134.7
114.3
92.9
82.3
73.8
63.0
53.4
48.5
153.5
119.9
101.9
85.7
77.8
71.1
62.4
54.2
49.7
143.4
109.2
95.1
82.1
75.5
69.8
62.0
54.6
50.3
LIN
MAG
0.02
0.05
0.07
0.09
0.10
0.11
0.12
0.14
0.16
0.02
0.04
0.06
0.09
0.10
0.12
0.14
0.18
0.19
0.02
0.04
0.06
0.09
0.11
0.13
0.16
0.19
0.21
S22
ANG
deg
78.4
61.5
52.8
49.3
50.4
53.1
57.8
61.8
63.8
75.1
61.9
61.0
63.7
65.0
65.7
66.0
65.3
64.5
72.5
67.2
69.5
71.1
71.1
70.4
68.7
66.4
64.8
LIN
MAG
0.9
0.88
0.79
0.73
0.71
0.70
0.71
0.73
0.74
0.92
0.73
0.64
0.59
0.58
0.58
0.59
0.61
0.62
0.85
0.62
0.55
0.53
0.52
0.52
0.53
0.54
0.55
ANG
deg
8.1
20.8
28.2
35.9
40.6
45.1
52.3
60.0
64.9
13.4
26.4
31.1
36.3
41.3
45.8
53.2
60.6
65.5
18.5
28.0
30.6
36.4
41.3
45.9
53.7
61.4
66.5
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BFR91A
Vishay Semiconductors
S11
VCE/V
IC/mA
20
30
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4 (8)
f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
LIN
MAG
0.44
0.22
0.16
0.14
0.13
0.12
0.12
0.12
0.11
0.34
0.17
0.14
0.13
0.12
0.12
0.12
0.11
0.11
S21
ANG
deg
55.8
103.9
127.5
153.3
165.9
177.3
170.1
152.3
147.1
64.0
112.9
136.2
159.4
171.4
178.6
165.7
147.8
143.7
LIN
MAG
28.24
12.79
8.00
5.13
4.15
3.51
2.84
2.42
2.21
31.01
13.08
8.10
5.17
4.18
3.53
2.87
2.44
2.23
S12
ANG
deg
132.6
102.0
90.7
79.8
73.9
68.7
61.5
54.4
50.6
127.3
99.1
88.9
78.7
73.0
68.0
61.1
54.2
50.3
LIN
MAG
0.02
0.04
0.06
0.09
0.11
0.13
0.17
0.20
0.22
0.02
0.04
0.06
0.09
0.11
0.13
0.17
0.20
0.22
S22
LIN
MAG
ANG
deg
72.8
74.1
75.8
75.4
74.2
72.9
70.0
67.1
65.0
73.3
77.2
77.8
76.8
75.3
73.6
70.5
67.4
65.4
0.76
0.54
0.50
0.49
0.48
0.49
0.50
0.51
0.52
0.71
0.52
0.49
0.48
0.48
0.48
0.49
0.50
0.51
ANG
deg
22.3
26.5
28.6
35.2
40.4
45.5
53.6
61.6
66.7
23.3
24.9
27.3
34.3
39.6
45.0
53.3
61.3
66.6
BFR91A
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb Collector Base Capacitance ( pF )
400
350
300
250
200
150
100
50
0
0
20
40
60
80
0.6
0.4
0.2
f=1MHz
0
0
6000
3.0
F Noise Figure ( dB )
3.5
5000
4000
3000
2000
VCE=5V
f=500MHz
12
16
20
2.5
2.0
1.5
1.0
VCE=8V
f=800MHz
ZS=50
0.5
0
0
12895
7000
1000
12896
0.8
12845
1.0
10
20
30
40
50
IC Collector Current ( mA )
0
12897
10
15
20
25
30
IC Collector Current ( mA )
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BFR91A
Vishay Semiconductors
VCE = V, IC = 30 mA , Z0 = 50
W
S12
S11
j
90
2.0 GHz
60
120
j0.5
1.5
j2
150
j0.2
30
1.0
j5
2.0 GHz
1
0.2
1.0
0.5
0.1
180
0.08
0.16
0.3
0.1
j0.2
j5
150
j0.5
30
j2
120
j
13 518
60
90
13 519
S21
S22
j
90
120
60
j0.5
0.1
150
j2
30
j0.2
0.3
180
2.0 GHz
20
40
j5
0.2
0.5
1.0
j0.2
150
0.3
0.1
j5
2.0 GHz
30
j0.5
120
13 520
90
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j2
60
13 521
BFR91A
Vishay Semiconductors
Dimensions of BFR91A in mm
96 12244
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BFR91A
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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