March 2010
Features
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
BS170
MMBF170
D
S D G
TO-92
S
SOT-23
Parameter
Drain-Gate Voltage (RGS 1M) Gate-Source Voltage Drain Current - Continuous - Pulsed Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
BS170
60 60 20 500 1200
MMBF170
Units
V V V
mA C C
Thermal Characteristics
Symbol
PD RJA
Parameter
Maximum Power Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
BS170
830 6.6 150
MMBF170
300 2.4 417
Units
mW mW/C C/W
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Electrical Characteristics
Symbol
BVDSS IDSS IGSSF VGS(th) gFS
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate Threshold Voltage Forward Transconductance
Conditions
VGS = 0V, ID = 100A VDS = 25V, VGS = 0V VGS = 15V, VDS = 0V VDS = VGS, ID = 1mA VDS = 10V, ID = 200mA VDS 2 VDS(on), ID = 200mA
Type
All All All All All BS170 MMBF170
Min.
60
Typ.
Max. Units
V 0.5 10 A nA V mS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Notes 1) 0.8 2.1 1.2 320 320 3 5 RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 200mA
Dynamic Characteristics Ciss Coss Crss ton Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25 VDD = 25V, ID = 500mA, VGS = 10V, RGEN = 50 toff Turn-Off Time VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25 VDD = 25V, ID = 500mA, VGS = 10V, RGEN = 50 Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. VDS = 10V, VGS = 0V, f = 1.0MHz All All All BS170 MMBF170 BS170 MMBF170 24 17 7 40 30 10 10 10 10 10 ns pF pF pF ns
Ordering Information
Part Number
BS170 BS170_D26Z BS170_D27Z BS170_D74Z BS170_D75Z MMBF170
Package
TO-92 TO-92 TO-92 TO-92 TO-92 SOT-23
Package Type
BULK Tape and Reel Tape and Reel AMMO AMMO Tape and Reel
Lead Frame
STRAIGHT FORMING FORMING FORMING FORMING
Pin array
DGS DGS DGS DGS DGS
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TO-92
Dimensions in Millimeters
2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 10 www.fairchildsemi.com
F63TNR Lab el
3P
SOT23-3L Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments S tandar d (no flow code) TN R 3, 000 7" Dia 193x 183x80 15, 000 0. 0082 0. 1175 D87Z TN R 10, 000 13" 355x 333x40 30, 000 0. 0082 0. 4006
3P
3P
3P
355m m x 333m m x 40m m Intermediate c ontainer f or 13" re el option B arcode L abel s ample
LO T : CB V K 741B 019 F S ID: MMS Z5221B QT Y : 3000 SPEC :
B arcode Lab el
B arcode Lab el
D/C1: D9842AB QT Y 1: SPEC REV: D/C2: QT Y 2: CP N: F AIRCHI LD S E MIC ONDUCT OR C ORP OR AT ION
(F 63T NR)
C omponents Tr ailer Ta pe 300mm minimum or 75 em pty pock ets Leade r T ape 500mm minimum or 125 em pty pockets
F E2 B0 Wc
Tc K0
P1
A0
B0
2.77 +/-0.10
W
8.0 +/-0.3
D0
1.55 +/-0.05
D1
1.125 +/-0.125
E1
1.75 +/-0.10
E2
6.25 min
F
3.50 +/-0.05
P1
4.0 +/-0.1
P0
4.0 +/-0.1
K0
1.30 +/-0.10
T
0.228 +/-0.013
Wc
5.2 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
0.5mm maximum
Component Rotation
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
Dim D min
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 4.00 100
Dim W1
0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0
Dim W2
0.567 14.4 0.567 14.4
Dim W3 (LSL-USL)
0.311 - 0.429 7.9 - 10. 9 0.311 - 0.429 7.9 - 10. 9
8mm
13" Dia
SOT-23
Dimensions in Millimeters
2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 13 www.fairchildsemi.com
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Rev. I47
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