Ordering number : ENN8242

2SK3825

2SK3825
Features

N-Channel Silicon MOSFET

General-Purpose Switching Device Applications

Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 74 296 1.75 75 150 --55 to +150 190 74 Unit V V A A W W C C mJ A

Note : *1 VDD=20V, L=50H, IAV=74A *2 L50H, Single pulse

Electrical Characteristics at Ta=25C

Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=37A ID=37A, VGS=10V ID=37A, VGS=4V Ratings min 60 1 10 1.2 27 45 10 13 13 18 2.6 typ max Unit V

A A
V S m m

Marking : K3825

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005QA TS IM TB-00001202 No.8242-1/4

2SK3825
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain Miller Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A IS=74A, VGS=0 Ratings min typ 5250 780 525 40 315 370 310 113 19 28 1.13 1.5 max Unit pF pF pF ns ns ns ns nC nC nC V

Package Dimensions unit : mm 2052C

10.2 3.6 5.1 4.5

1.3

18.0

5.6

1.2

0.8 1 2 3

14.0

15.1

2.7 6.3

0.4

1 : Gate 2 : Drain 3 : Source SANYO : TO-220

2.55

2.55

Switching Time Test Circuit

VIN 10V 0V VIN ID=37A RL=0.81 VDD=30V

2.7

Avalanche Resistance Test Circuit

L 50

D
PW=10s D.C.1%

VOUT

2SK3825

10V 0V
2SK3825

50

VDD

P.G

50

No.8242-2/4

2SK3825
150

ID -- VDS
V 8 V
6V
Tc=25C

150

ID -- VGS
5 C 25 C
75 C
5 6 IT08858 125 150 IT08860 1.4 1.6 IT08862

VDS=10V
125

10

125

Drain Current, ID -- A

Drain Current, ID -- A

100

100

75

4V

75

50

50

0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT08857

0 0 1 2 3 4

Drain-to-Source Voltage, VDS -- V

30

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

30

RDS(on) -- Tc

ID=37A

Static Drain-to-Source On-State Resistance, RDS(on) -- m

Static Drain-to-Source On-State Resistance, RDS(on) -- m

25

25

20

20

15

Tc=75C

15

10

25C
--25C

10

=4V VGS 7A, 3 I D= =10V , VGS 37A I D=

0 2 3 4 5 6 7 8 9 10 IT08859

0 --50

--25

25 C

VGS=3V

25

Tc =

25

25

75 --25 C C
50 75

Gate-to-Source Voltage, VGS -- V

100

yfs -- ID

Case Temperature, Tc -- C
100 7 5 3 2

IF -- VSD
VGS=0

Forward Transfer Admittance, yfs -- S

7 5

VDS=10V
C

Forward Current, IF -- A

3 2 10 7 5 3 2 1.0 7 5 0.1

25

= Tc

5C --2 C 75

10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2

5 7 1.0

5 7 10

Drain Current, ID -- A
1000 7

5 7 100 IT08861

0.4

Tc=75 C

25C --25C

0.6

0.8

1.0

Diode Forward Voltage, VSD -- V

10000 7

SW Time -- ID
td (off)

Ciss, Coss, Crss -- VDS

f=1MHz

VDD=30V VGS=10V

Switching Time, SW Time -- ns

Ciss

5 3

Ciss, Coss, Crss -- pF

3 2

tf
2

100 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT08863

1000 7 5 3 2 0 5 10

Coss
Crss

tr

td(on)

15

20

Tc= --2
100 1.2 25

30 IT08864

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

No.8242-3/4

2SK3825
10 9

VGS -- Qg
VDS=30V ID=74A
Drain Current, ID -- A

7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2

ASO
IDP=296A ID=74A <10s 1 0 s 10 0 s 1m s 10 ms DC 100m s op era tio n

Gate-to-Source Voltage, VGS -- V

8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 IT08865

Operation in this area is limited by RDS(on).

0.1 0.1

Tc=25C Single pulse

2 3 5 7 1.0 2 3 5 7 10 2 3

Total Gate Charge, Qg -- nC

2.0

PD -- Ta
Allowable Power Dissipation, PD -- W

Drain-to-Source Voltage, VDS -- V

90 80 75 70 60 50 40 30 20 10 0

5 7 100 IT08866

PD -- Tc

Allowable Power Dissipation, PD -- W

1.75 1.5

1.0

0.5

0 0 20 40 60 80 100 120 140 160

20

40

60

80

100

120

140

160

Ambient Temperature, Ta -- C

IT08843

Case Temperature, Tc -- C

IT08867

Note on usage : Since the 2SK3825 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customers products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice.
PS No.8242-4/4