KMPR photoresist for fabrication of thick microstructures Chen-Han Lee, Kyle Jiang Centre for Microengineering and Nanotechnology

School of Engineering, the University of Birmingham Edgbaston, Birmingham B15 2TT, UK

Abstract Presented in this paper is an investigation on using KMPR, a new negative tone photoresist, to build thick micromoulds for electroforming. Compared with SU-8 photoresist, KMPR has the advantage to be removed after electroforming metallic microcomponents. Detailed process of KMPR mould fabrication and stripping is presented and nickel electroforming has been performed using the KMPR moulds. The results are compared with SU-8 moulds and the strip-ability of KMPR is clearly demonstrated. Keywords: KMPR, SU-8, micromoulding, thick photoresist, high aspect ratio

1. Introduction In recent years, there are increasing demands in the development of thick photoresist microstructures in the field of MEMS, especially as moulds for electroforming micro components. These micro components often require high aspect ratio features or great thickness. For example, high aspect ratio features are desired in magnetic actuators for delivering greater driving force [1], magnetic coils to lower resistance [2] and micro combustion engines requires thick components to increase the size of the combustion chambers and volume to surface ratio [3]. UV-LIGA has been a preferred technique to traditional x-ray LIGA for realising high aspect ratio electroforming moulds for its low exposure source cost and SU-8 photoresist has been a very popular material in this respect. SU8 is well known for its mechanical properties and low optical absorption in the near-UV range which give rise to uniform exposure conditions across the thickness [4, 5]. A 1000 m thick microstructure with 40:1 aspect ratio in a single lithography cycle [6], and a 1200 m thick microstructure with 18:1 aspect ratio in double spin lithography [7], both with good vertical sidewall profiles and good component shapes, have been reported. However, the crosslinked SU-8 epoxy is difficult to be stripped after post exposure bake and electroforming without damaging or disturbing the metallic structure, particularly when attempting to remove SU-8 pillar trapped inside metallic components. A few removal methods have been reported. Physical techniques such as water jetting or bead blasting are possible methods in removing the crosslinked SU-8, but limited by the inability to remove the photoresist enclosed by the metallic components [8]. High temperature ashing of SU-8 at 600oC completely removes SU-8 mould but may encourage grain growth and weakens the metallic components [8]. Wet removal of SU-8, such as using K-10 (Kolene Corp,. Detroit MI), efficiently removes SU-8 but also have detectable effect on metallic parts [9]. Though O2/SF6 plasma can be suitable for stripping SU-8, but with slow etch rate of 1.5-2 m/min, at 50 sccm O2, 2 sccm SF6, 0 sccm Ar and 150mT pressure [10]. These drawbacks hinder the

widespread usage of SU-8 as an electroforming mould and other applications where stripping of SU8 is required. Some photoresist or approach has been presented to attempt to solve the problem. Srinivasa Rao et al. has used JSR THB 151N resist, which requires short baking time, to develop 130 m thick, 2.6 aspect ratio electroforming moulds with near vertical sidewalls. Electroforming of high density array of 50 m thick, 1 aspect ratio copper solder bumps is also demonstrated. It is also demonstrated to be easily stripped with no residue [11]. Niedermann et al. also presented a negative tone strippable photoresist, named DiaPlate 133, for electroforming. A 60 m thick nickel foil with 32 m diameter holes and a 300 m thick gear has been successfully electroformed using this resist, but requires longer prebake time [12]. In this paper, an optimized process of KMPR photoresist for the fabrication of electroforming mould is therefore presented to fill the fabrication gap. KMPR negative photoresist can be easily stripped by NMP (N-Methyl-2-Pyrrolidone) based solvent, Remover PG (MicroChem, MA, USA) at o 80 C. The process of KMPR photoresist is similar to SU-8. A double split spin coat cycle has been developed to achieve resist thickness of more than 180 m and aspect ratio of 18, with appropriate exposure dose. Electroforming of thick nickel gear and the stripping of the KMPR resist will also be presented. 2. Experimental On these wafers, Chrome and Gold metal layer are evaporated using the Polaron E6100 thermal evaporation system. These metal layers are used as conductive layer in the subsequent electroforming process. 2.1 KMPR resist KMPR photoresist is jointly developed by Nippon Kayaku and Microchem Corporation. It is a chemically amplified, negative tone epoxy photoresist, intended to resolve the stripping problem SU-8 have. KMPR is processed similarly to

resist thickness (m)

SU-8, with additional stripping step after electroforming. Its spin cycle for different thicknesses and grades and exposure dose for different thicknesses are shown in figure 1 and figure 2. KMPR is able to achieve thickness of 80 m in a single spin. A split double spin cycle is used to achieve resist thickness of more than 180 m. Key properties of this photoresist are crack free, good adhesion, easily stripped and excellent resistance to plating chemicals. 2.2 Lithography details For single layer, KMPR 1025 photoresist is spin coated on the 100 mm diameter gold coated wafer. The photoresist is then prebaked and exposed to UV light using Canon PLA-501FA mask aligner with wavelength range of 365 nm to 436 nm. Soft contact mode is used during UV exposure, to ensure vertical sidewall profile. After exposure, the photoresist is post-expose baked (PEB). The patterned photoresist is developed in 2.38% TMAH MF26A developer (Chestech, Rugby, UK), with spray puddle method. For double layer, another cycle of spin coat and prebake are performed before exposure. Details of the process for single and double layer are shown in table 1. 2.3 Electroforming and resist stripping Nickel is electroformed into the photoresist mould with dc power supply. Nickel sulphamate Nickel 1000 (PMD chemicals, Coventry, UK) is used as electrolyte and agitated by a pump in an electroforming cell. Table 2 shows the electroforming parameters. After electroforming, the photoresist is o stripped off with Remover PG at 80 C for 1 hour. Table 1a. Process parameters for 60 m KMPR photoresist Spin Speed /time 1000 rpm/30s Prebake temp/time 100 oC/17.5 min UV Exposure 1135 mJ/cm2

The KMPR resist expanded and was lifted off from the wafer under this condition, and the electroformed nickel components is revealed on the wafer.
90 80 70 60 50 40 30 20 10 0 0 500 1000 1500 2000 2500 3000 3500 Spin Spee d (rpm ) KMPR 1005 KMPR 1010 KMPR 1025 KMPR 1050

Figure 1. Spin coat curve for various grades of KMPR.

1600 1400 Exposure Dose (mJ/cm) 1200 1000 800 600 400 200 0 0 20 40 60 80 100 Thickness (m)

Figure 2. Exposure dose curve for different resist thickness.

Postbake Temp/time 100 oC /3 min

Development time 6 min

Table 1b. Process parameters for 180 m KMPR photoresist Spin speed /Time 1 layer 2nd layer
st

Prebake temp /Time 95 C/25 min 95 oC/30 min

o

UV Exposure

Postbake temp /Time

Development time

1000 rpm /30 s 1000 rpm /30 s

1890 mJ/cm2

100 oC /9min

25 min

Table 2. Process parameters for Nickel electroforming Current density 2 A/dm

2

Voltage 1.9 V

Temperature 57 C
o

pH value 4.7

Total time 45 min

3. Result and Discussion For both single and double spin process, the KMPR resist produced uniform thickness and did not delaminate which could be attributed to good adhesion between the two layers of KMPR resist as well as to the gold seed layer. There was also no residue at the bottom of the structure after development. Figure 3 shows a top view of a mould for micro gear fabricated by single spin process. Figure 4 shows a micro electroforming mould of a micropiston after a double spinning deposition of KMPR. The SEM images showed that dimensional control can be done to a high resolution and sidewall profile is close to vertical and is comparable to SU-8. Figure 5 shows image of a nickel electroformed teeth of the gear at elevated angle. The sidewall of the gear is straight and near vertical with good component shapes. Figure 6a shows an SEM image of a nickel piston electroformed using an SU-8 mould. The electroforming was performed less than half the depth of the mould. After demoulding, the SU-8 pillar in the mould remained. Figure 6b is an SEM image of a nickel gear produced in a KMPR photoresist mould. After demoulding, pillars in the two holes on the gear were removed completely, leaving the microgear intact.

Figure 5. A SEM image of electroformed nickel gear after stripping of KMPR.

SU-8 Nickel piston

Figure 6a. An SEM image of a micro nickel piston halfway electroformed in an SU-8 mould. The SU-8 pillar remains in the holes after demoulding.

Figure 3. SEM images of single spin 60 m thick KMPR photoresist structures. .

Figure 6b. SEM images of a micro nickel gear electroformed on a KMPR mould. The KMPR is completely removed after demoulding. 4. Conclusions Figure 4. SEM images of double spin 180 m thick KMPR photoresist structure. This paper presents the use of KMPR photoresist for manufacturing thick and high aspect ratio moulds for electroforming metallic components. A double spin coating process was developed to achieve the photoresist thickness of 180 m. The

baking process and lithography of the thick photoresist was optimized to achieve good shape and near vertical sidewall. The electroforming process of nickel components was performed repeatedly and the results showed the nickel microcomponents have good shapes and near vertical sidewalls. Removing KMPR photoresist proved straightforward and the nickel components were free of residues. 5. References [1] Kohlmeier T, Seidemann V, Bttgenbach S and Gatzen HH. Application of UV depth lithography and 3D-microfirming for high aspect ratio electromagnetic microactuators components. Microsystem Technologies (2002) vol. 8 pp 304-7. [2] Brunet M, ODonnell T, OBrien J, McCloskey P and OMathuna S. Thick photoresist development for the fabrication of high aspect ratio magnetic coils. J. Micromech. Microeng. (2002) vol. 12 pp 4449. [3] Lee C H, Jiang K C, Jin P, and Prewett P D. Design and fabrication of a micro Wankel engine using EMS technology. J. Microelectronic Eng. (2004) vol. 73-74 pp 529534. [4] Lorenz H, Despont M, Fahrni N, LaBianca N, Renaud P and Vettiger P. SU-8: a low-cost negative resist for MEMS. J. Micromech. Microeng. (1997) vol. 7 pp 1214. [5] Lorenz H, Laudon M and Renaud P. Mechanical Characterization of a New High-

Aspect-Ratio Near UV-Photoresist. J. Microelectronic Engineering (1998) vol. 41/42 pp 371-4. [6] Lorenz H, Despont M, Fahrni N, Brugger J, Vettiger P and Renaud P. High-aspect-ratio, ultrathick, negative-tone near-UV photoresist and its applications for MEMS. Sensors and Actuators A. (1998) vol. 64 pp 33-9. [7] Jin P, Jiang K C and Sun N. Ultra-thick SU-8 fabrication for micro reciprocating engines. J. Microlithography, Microfabrication, Microsystems. (2004) vol. 3 pp 569573. [8] Dentinger P M. Removal of SU-8 photoresist for thick-film applications II: Dry techniques. Micro and Nano Engineering Conference, Grenoble (2001). [9] Denthinger P M, Clift W M and Goods S H. Removal of SU-8 photoresist for thick applications. J. Microelectronic Engineering (2002) vol. 61-42 pp 993-1000. [10] Hong G, Holmes A S and Heaton M E. SU8 resist plasma etching and its optimization. DTIP 2003, Mandelieu-La Napoule, France (2003). [11] Rao VS, Kripesh V, Yoon SW and Tay AAO. A thick photoresist process for advanced wafer level packaging applications using JSR THB151N negative tone UV photoresist J. Micromech. Microeng. (2006) vol. 16 pp 1841-6. [12] Niedermann Ph, Berthou H, Zwickl S, Schnholzer U, Meierc K, Gantner Ch, KappSchwoerer D. A novel thick photoresist for microsystem technology. J. Microelectronic Engineering (2003) vol. 67-68 pp 259-265.