Anda di halaman 1dari 45

INDUSTRIAL TRAINING REPORT AT ONSEMICONDUCTOR (SCG) INDUSTRIES MALAYSIA SDN BHD

BY, LEE KOK YEW (EE081554)


DEPARTMENT OF ELECTRICAL & COMMUNICATION ENGINEERING

UNIVERSITI TENAGA NASIONAL START DATE: 11 APRIL 2011 END DATE: 1 JULY 2011 DURATION: 12 WEEKS

SCG INDUSTRIES MALAYSIA SDN BHD LOT 122, SENAWANG INDUSTRIAL ESTATE, 70450 SEREMBAN, NEGAERI SEMBILAN

INDUSTRIAL TRAINING REPORTS

NAME ID IC NO. COURSE

: LEE KOK YEW : EE081554 : 890725-05-5541 : ELECTRICAL & COMMUNICATIONS ENGINEERING UNIVERSITI : UNIVERSITI TENAGA NASIONAL HOST LECTURER: DR. KANNAN M. MUNISAMY COMPANY : ON SEMICONDUCTOR DEPARTMENT : POWER PRODUCT DIVISION INTEGRATED CIRCUIT SUPERVISOR : YAP SHONG LAEY PERIOD : 11 APRIL 2011 1 JULY 2011
Report done by, Lee Kok Yew

Page 2

ACKNOWLEDGEMENT
I would like to express my gratefulness to participate of the following organization or any individuals who contribute in my industrial training program and the case study project. During my 12 weeks of training, I have been assign under Mr Yap Shong Laey which is my supervisor during the time. He is the production head of Power IC department in ON Semiconductor. I want take this opportunity to thank my supervisor for his guidance throughout the whole industrial training. Besides that, I would also like to thank Mr Chow Yi Heng and Mr Chaw Wing Onn. Although they are not my supervisor, but they are willing to teach and guide me in my training program. A special thanks also to all the profession staff in ON Semiconductor who following this below: Mr Lee Yeu Wen, Manufacturing Engineer Ms Koh Siew Ting, Process Engineer Mr Ong Hao Yii, Process Engineer Mr Azharsyah, Process Engineer Mr Nor Halim, Process Engineer Besides that, I also want take this opportunity to thank Mr. Kannan M. Munisamy which are my visiting lecturer who really doing hard come all the way from UNITEN to pay a visit in order to understand my training condition and my work over ON Semiconductor. Last but not least, I would like to send my special thanks to every personnel staff in ON Semiconductor who give their support and guidance throughout my internship period especially staffs and operators from Power Product Division-Integrated Circuit (PPD-IC) and PPD-Wire.

Report done by, Lee Kok Yew

Page 3

CONTENTS
1.0 2.0 ACKNOWLEDGEMENT INTRODUCTION TO ON SEMICONDUCTOR 2.1 2.2 2.3 2.4 3.0 HISTORY OF MOTOROLA SPS HISTORY OF ON SEMICONDUCTOR MALAYSIA CHRONOLOGY OF ON SEMICONDUCTOR SEREMBAN VISION & MISSION

OVERVIEW OF ON SEMICONDUCTOR SEREMBAN 3.1 3.2 3.3 DEPARTMENT CHART ON SEMICONDUCTOR SEREMBAN COMPANY ORGANIZATION CHART ORGANIZATION CHART FOR POWER IC DEPARTMENT

4.0

PROCESS FLOW IN POWER IC 4.1 FRONT END 4.1.1 4.1.2 4.1.3 4.1.4 4.2 WAFER MOUNT WAFER SAW AND WASH DIE BOND WIRE BOND / CLIP BOND

BACK END 4.2.1 4.2.2 MOLD PLATING

4.3

FINAL TEST 4.3.1 4.3.2 4.3.3 4.3.4 TRIM / FORM (SINGULATION) ELECTRICAL TEST MARKING PACKING

4.4

PRODUCT OF POWER-IC

Report done by, Lee Kok Yew

Page 4

5.0

TRAINING ACTIVITIES 5.1 5.2 FRONT END BACK END 5.2.1 5.2.2 5.2.3 5.3 DELAM (SAT ANALYSIS) WIRE SWEEP ANALYSIS (X-RAY) CROSS-SECTIONING

FINAL TEST 5.3.1 5.3.2 LOW POWER MICROSCOPE HIGH POWER MICROSCOPE

6.0 7.0 8.0

PROJECT PROBLEM REFERENCES

Report done by, Lee Kok Yew

Page 5

2.0 INTRODUCTION TO ON SEMICONDUCTOR ON Semiconductor is one of the world largest suppliers of performance chips for power management in electronics systems. ON Semiconductor produces power and signal management, logic, discrete and customs devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military or aerospace and power applications. ON Semiconductor is a world-renowned company today with

manufacturing facilities standing firmly in all parts of the world. Subsidiary of Texas Pacific Group, ON Semiconductors headquarters is in Phoenix, Arizona(USA) and her sibling in Guadalajara, Mexico; Pestany, Slovak Republic; Roznov, Chech Republic; Toulouse, France; Seremban, Malaysia; Leshan, China and Aizu, Japan. It also has sales offices throughout the world. ON Semiconductors internal manufacturing base is global, with 8 manufacturing sites including the first wafer FAB in western China dedicated to building state of the art power management products. This diversity and distributed matrix of sources reduces supply side risk and enables cost effective manufacturing and delivery of our products anywhere in the world.

Report done by, Lee Kok Yew

Page 6

2.1 HISTORY OF MOTOROLA SPS ON Semiconductor ( Formerly a Division of Motorola). ON Semiconductor is just beginning but its rooted back to its former parent, Motorola indefinitely. Motorola was established by two brother during the late 20s, Paul V Galvin and Joseph E Galvin. In September 25th ,1928, both founder of Motorola bought over battery eliminator business from Stewart Storage, a company based in Chicago which at that time faces near bankruptcy. They incorporated the Galvin manufacturing Corporation until it was change to Motorola. From the day they own the company until the 1930 there were no innovation nor invention produced. Hence the companys early battery eliminator, private-label home radios and pioneering auto radios had no distinctive trademark other than the corporate name. In 1930, Paul Galvin conceived the name Motorola to convey the excitement new idea of music in motion for the companys auto radios, the first mass production. This new trademark so widely known took Motorola as its corporate name in 1947. The first Motorola trademark registered in1930 had the appearance of being hand written with a lightning bolt crossing the T. Other variations were used over the years, emblazoned on highway signs, product billboards , packaging and print advertising until the modern design is introduced . 2.2 HISTORY OF ON SEMICONDUCTOR MALAYSIA ON Semiconductor Malaysia, managed and operated wholly by Malaysians, is the discrete semiconductor power house. ON Semiconductor Malaysia, has its beginning in 1979 with the incorporation of Motorola Semiconductor Sdn.Bhd (MSSB). In 1987, it established the second facility with the incorporation of Motorola Electronics Sdn.Bhd ( MESB). It went on to achieve a historic first for the nation with the establishment of Integrated Surface-mount Manufacturing Facility (ISMF).This first such facility in the country strategically aligns wafer fabrication, assembly and testing under one roof, producing discrete transistors, biased resistor-transistors and switching diodes in world class cycle time. From two world-class manufacturing facilities in Senawang Industrial Estate, Seremban, Malaysia. ON SEMICONDUCTOR is providing Original Equipment Manufacturing (OEMs) worldwide with a broad range of discrete and analog products in Report done by, Lee Kok Yew

Page 7

Surface Mount and Power packages such as power and signal management, logic, discrete and customs devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military or aerospace and power applications. The mission of ON Semiconductor is to become The Premier Power Solutions Provider. And the vision is to enable ON Semiconductor to dominate Power and Data Management segments by providing Advanced Packaging solutions with competitive cost through operational excellence.

SITE 1 MANUFACTURING PLANT SEREMBAN, MALAYSIA

SITE 2 WAFER FABRICATION PLANT SEREMBAN, MALAYSIA

ON semiconductors Malaysia has 2 plants which both located in Seremban. Site 1 is the main manufacturing line for ON Semiconductor Malaysia branch. Site 2 is mainly wafer fabrication and laboratory work. 2.3 CHRONOLOGY OF ON SEMICONDUCTOR SEREMBAN

1979- 15 Motorola Kuala Lumpur personnel relocated to start-up 12,000 sq. ft. Facility purchased from Spraque.First product was Silicon Power Metal (SPM). 1981- Added 100,000 sq. feet building 1982- Purchased adjacent factory with additional 28,000 sq. feet 1983- Started Test Operation for Standard Logic (14/16/20 LD PDIP) & discretes (SOT23)

Report done by, Lee Kok Yew

Page 8

1984- Held the 1st Service Recognition Award for pioneer employees 1985- CEO Award of Excellence in Quality, Productivity & Delivery of IC 14/16 ld D.I.P. 1986- Consolidated Discrete Assy/Test & moved out IC operation. 1987- Build ISMF (integrated Semiconductor Manufacturing Facility), Malaysia's first Wafer Fabrication Plant. 1988- ISMF officially opened by Minister of Trade & Industry. 1990- Won Gold Award in Corporate first TCS Showcase. Won SPS Patent of the Year Award. 1991- Motorola Malaysia won Prime Ministers National Quality Award. Presented 11 technical papers in Internecine. Judged best in 5 out of 8 categories, also won Best Paper Overall Award. Established Product Engineering organization. 1992- Provided key management and technical support to Motorola- Philips JV (SMP) start-up. 1993- Expanded Wafer Fabrication operation to include Ion Implantation process. 1994- Obtained ISO 9002 certification. Provided management team to start-up Motorolas most successful JV in China. 1995- Added 43000 sq. feet at ISMF, MESB Added 83,000 sq. feet at North Wing, MSSB. 1996- Established Technical Operation organization. Won Malaysias Hibiscus Award for Exceptional Achievement in Environmental Performance. 1997- Developed & introduced new surface mount packages (TSOP6 & Power mite). Certified QS9000 - The first SCG plant. Accounted for 11 out of 28 patents filed from all SPS Asian manufacturing sites. ISMF engineers designed the 1st die- integrated dual inductive load driver that replaces three SOT23 with one. 1998- Successfully transferred 500 devices from BP5 to ISMF fab. Accounted for 77% patent pursues (33 out of 43)for Asian manufacturing sites. RF Linear Modules won Best Overall Supplier of the Year Award from Philips Report done by, Lee Kok Yew Page 9

Broadband and Component Supplier of the Year Award from C-COR. TPM was officially launched on September 9 at 9:09 am.

1999- The first Analog Micro-8device was qualified. Successfully executed Analog SOT23L transfer from Aizu. Successfully transferred Analog IC-DPAKfrom KLM. Won the 4th Gold Award from Malaysian Society of Safety & Health(MSOSH). Motorola Corporation awarded ON Semiconductor Sbn "The Excellence In EHS Performance". On August 5 1999, SCG becomes ON Semiconductor. Official Launching of ON Semi Seremban by US Ambassador to Malaysia. Awarded the 1st. ON Semiconductor corporate quality Award for "Excellence in Continous Quality Improvement for SOT23". 2000- Became a Public Listed Company on April 28th. Won the 5th Gold Award from Malaysian Society of Safety & Health (MSOSH). DaimlerChrysler Corp Gold Award. RF products transferred to Motorola KLM after 18 years in SBN. Site 1 Reconfiguration for more production space. Certified for QS90003rd Edition. New Products Introduction SC88/A, SC82AB. Komala Ramasamy awarded Model Female Employee of the Year for Malaysia by Human Resource Ministry. 11 Patentsfiled. 2001- Rated #1 in Supplier Quality by Seagate. Certified for QS9000 3rd Edition (including Package Design Control). Certified for TS16949 : 1999 (1st semiconductor firm in the industry). Introduced Chip FET package (half footprint of TSOP6). JIPM TPM Excellence Award - First Category (1st & only site in ON Semi).

Report done by, Lee Kok Yew

Page 10

2.4 VISION & MISSION I. Vision -To become The Premier Power Solution Provider II. Mission -Enable ON Semiconductor to dominate Power and Data Management segments by providing Advanced Packaging solutions with competitive cost through operational excellence. III. Quality Policy -We will exceed Customer Expectations with our Superior Products and Services. IV. Quality Statement -Every ON employee is personally responsible for ensuring the highest Quality in the products and services delivered to internal and external customer. Continuous improvement in the quality of our processes, products and services is fundamental to the achievement of customer satisfaction. Original Equipment Manufacturing (OEMs) worldwide with a broad range of discrete and analog products in Surface Mount and Power packages. Nowadays, ON Semiconductor Seremban has almost 1900 employees to manage and operate the company. V. Objective

Enables energy efficient solutions for a greener world Provides a broad array of products and solutions Helps customers solve their unique design challenges Operates a world-class, value added supply chain

Report done by, Lee Kok Yew

Page 11

3.0 OVERVIEW OF ON SEMICONDUCTOR SEREMBAN 3.1 DEPARTMENT CHART ON SEMICONDUCTOR SEREMBAN

ON SEMICONDUCTOR (SITE 1)

PPD (POWER PRODUCT DIVISION)

SOSM (SMALL OUTLINESURFACEMOUNT)

PPD-IC (POWER PRODUCT DIVISIONINTEGRATED CIRCUIT)

PPD-WIRE (POWER PRODUCT DIVISIONWIRE)

PPD-CBSM (POWER PRODUCT DIVISION- CLIP BOND SURFACEMOUNT)

SOSM (SMALL OUTFIT SURFACEMOUNT)

QFN (QUAD FLAT NO LEAD)

ON SEMICONDUCTOR (SITE 2)

WAFER FRIBRICATION

LABORATORY WORK

Report done by, Lee Kok Yew

Page 12

3.2 COMPANY ORGANIZATION CHART

Report done by, Lee Kok Yew

Page 13

3.3 ORGANIZATION CHART FOR POWER IC DEPARTMENT

Mohd Tarmizi Song Operations Manager PPD/CBSM

Firdaus Badarudin Process Engineer

Yap Shong Laey Manufacturing Equipment Engineer

Ong Hao Yii Process Engineer

Kam Mei Sang Manufacturing Equipment Engineer

Koh Siew Ting Process Engineer

Ng Then Wai Manufacturing Engineer

Sofia Sulaiman QA/QC Engineer

Chaw Wing Onn Manufacturing Engineer Chong Kian How Equipment Engineer Lee Kok Yew Trainee Lee Chai Pic Trainee

Gan Chin Sern Process Engineer

Report done by, Lee Kok Yew

Page 14

4.0 PROCESS FLOW IN POWER IC

Frontend
Mounting

Backend
Molding

Final test
Trim and form

Saw

Plating FOI (Final Outgoing Inspection)

Testing and marking

Die bond

Packing

Wire bond

Throughout my 12 weeks of internship program, I had been placed in Power Product Division Integrated Circuit (PPD-IC) production line. My supervisor is Yap Shong Laey. He is the head of manufacturing PPD-IC line. My given tasks are mostly covered from front end, back end and final test. In the production line, they are a total of 9 important steps required to produce a unit. The first step will be wafer fabrication in Site 2. In this step, the chip or IC will be mounting in a wafer that is ready to be shift out to Site 1 for production purpose. Second step will be wafer saw and wash. The wafer will be mount by Mylar using ring and send for wafer saw. Next, wafers will be send to the die bond machine. The chip or IC will be place to the lead frame by the handler. After that, the lead frame will be move to next process which is the wire bond or clip bond. There are 2 types of wires which are commonly used, gold wire and copper wire. Size of wire are depends on type of products that process. The fifth step will be the molding process. The lead frame that had already connected with wire will send to back end for molding purpose. After molding, units are then send for plating. The molded lead frame will be coat with a thin layer of chemical material for anti rust purpose. The seventh step will be the trim and form, molded strip Report done by, Lee Kok Yew Page 15

will be cut into single unit and ready send for testing purpose. In the final test session, unit will run through a sort of test like isolation test, high temp and low temp test, QA test and many more. Unit that successful run through all the test will be send for marking and ready for packing. The entire unit will be put in a tube or a reel. After packing, products are then ready to deliver to customer. 4.1 Front End 4.1.1 Wafer Mount Wafers are mounted on a Mylar tape that adheres to the back of the wafer. The mounting tape provides support for handling during wafer saw and the dies attach process. The qualities that will be control are broken wafer check, scratches and bubbles.

4.1.2 Wafer Saw and Wash This process will cut the individual die from the wafer leaving the die on the Mylar tape. After sawn, the wafer will be wash to remove silicon debris. The qualities that will be control are die chip or crack, kerfs width and scribe defects.

Report done by, Lee Kok Yew

Page 16

4.1.3 Die Bond This process provides mechanical support to the silicon die and electrical connection between die to lead frame. The qualities that will be control are die shear and bond line thickness.

Lead Frame: TO220 based material

TO220 with die on the lead frame

4.1.4 Wire Bond / Clip Bond This process provides copper / gold wire interconnection between silicon die pad and lead frame lead/post. The qualities that will be control are ball shear and wire pull.

Copper Wire / Gold Wire as connection wire between the die and the post/flag

Type of Wire Bond Machine: Shinkawa ASM

Report done by, Lee Kok Yew

Page 17

4.2 Back End 4.2.1 Mold Mold compound was used to protect the device mechanically and

environmentally. Transfer molding is used to encapsulate most plastic packages. The qualities that will be control are wire sweep check, package offset and mismatch check.

TO220: Before Molding Molding Machine: Lauffer

TO220: After Molding

4.2.2 Plating This process allows for the mechanical and electrical connection between the package and the printed circuit board. Leadframe based packages most commonly use tin-lead solder plating as the final lead finish. Pb-free packages use pure Sn as final lead finish. The qualities that will be control are solder thickness and composition.

TO220: Before Plating Plating Machine in plating department

TO220: After Plating

Report done by, Lee Kok Yew

Page 18

4.3 Final Test 4.3.1 Trim / Form (singulation) This is process where the individual leads of the leadframe are separated from the leadframe strip. For manual trim and form, the lead are cut and formed mechanically to the specified shape with a single punch. For auto trim and form, individual units are singulated from the leadframe strip through progressive trim and form. The quality that will be control is lead dimensions.

TO220: Before Trim Trim / Form machine: Micron

TO220: After Trim

4.3.2 Electrical Test These processes continue after assembly process. This is electrical test where to ensure units are meeting electrical specification before shipping. The qualities that will be control are bin sort check and correlation.

RAW UNIT: TO220 TESTER

TEST HANDLER

Report done by, Lee Kok Yew

Page 19

4.3.3 Marking Corporate and product identification was place on a packaged device. This marking allows for product differentiation. After test, only good units will be mark by using laser method. The quality that will be control is marking verification.

4.3.4 Packing This process is final packaging of product prior shipping to customers. The quality that will be control is peel force check. The good unit will be pack in either tube or tape and reel.

Report done by, Lee Kok Yew

Page 20

After that, the tube or reel filled with unit will be packed in a box. The box will be placed in a pallet and ready to be shift out to customer. 4.4 Product of Power IC (PPD-IC)

IC TO220

ICD2PAK EG

ICDPAK

Product of PPD IC
Iso Thyristor Auto Thyristor ICD2PAK

Report done by, Lee Kok Yew

Page 21

5.0 Training Activities In ON Semiconductor, I was placed under Mr. Yap Shong Laey. He is a equipment engineer of Power-IC. He is also the manufacturing head of the production line. My practical work in ON Semiconductor is more related with the whole production line which covered front-end, back-end and final test. 5.1 Front End In the front-end, there were few things I have done during my internship period. Firstly is wire pull. Wire Pull Testing (WPT) is one of several available time-zero tests for wire bond strength and quality. It consists of applying an upward force under the wire to be tested, effectively pulling the wire away from the die. Wire pull testing requires special equipment commonly referred to as a wire pull tester, which consists of two major parts: 1) a mechanism for applying the upward pulling force on the wire using a tool known as a pull hook; and 2) a calibrated instrument for measuring the force at which the wire eventually breaks. The wire pull tester measures the pulling force at which the wire or bond fails. The measured force is then recorded in grams-force. Aside from the bond strength reading, the operator must also record the bond failure mode. Failure mode in this context refers to one of the following: 1) first bond (ball bond) lifting; 2) neck break; 3) midspan wire break; 4) heel break; and 5) second bond (wedge bond) lifting. First or second bond lifting is unacceptable and should prompt the process owner to investigate why such a failure mode occurred.

Photos of a wire pull tester stage (left) and a pull hook (right)

Report done by, Lee Kok Yew

Page 22

Besides that, I have also leant concept of 5S in the front-end production line. 5S is the name of a workplace organization methodology that uses a list if five Japanese words which are seiri (sorting), seiton (straightening or setting in order), seiso (sweeping or chinning or cleanliness), seiketsu (standardizing) and shitsuke (self discipline). Originary, the machine and equipment in front-end was not arrange in order. I was assign to do so. By doing that, I needed to do wire and pipe management which mean I need to use a bracket or a plastic pipe to put all the wire all together so that it look nicer and not messy.

Wire and cable that is not arrange nicely

If the wire or cable is not arranged nicely and in order, it will cause accident to the operator or staff that working in the production line. So in conclude, 5S concept is very important for every company smoothly in the production line. I also leant how to program a wire-bond machine to run the wire bond process. This was learnt from a equipment engineer in the front-end. It consists a sort of steps to teach the machine run wire-bond process. The machine that I have been teach is shinkawa and ASM which is a Japanese machine.

Wire Bond Process

Report done by, Lee Kok Yew

Page 23

5.2 Back-End In the back-end of the production line, usually trainee will be assign to do DELAM or Wire Sweep for the molded strip. This usually is done when there is a major breakdown for the molding machine. During a break down or shut down for the machine, the production will stop. There will be an air gap that will cause in between the DAMBAR and the MOLD. Once the machine is run again, the air gap will occur inside the molded strip. This will cause the unit in the strip contains a layer of air gap. This air gap will cause the heat inside the IC cant be throw out by the heat sink. This will damage the IC and will affect the performance of the unit. 5.2.1 DELAM (SAT Analysis) SAT ANALYSIS SAT (Scanning Acoustic Topography) analysis is the transmission and reception of ultrasonic waves in DI (diluted) water media. What are Ultrasonic Waves? Ultrasonic waves refer to sound waves above 20 kHz (not audible to the human ear) Characteristics of Ultrasonic Waves 1. Freely propagate through liquids and solids 2. Reflect at boundaries of internal flaws and change of material 3. Capable of being focused, straight transmission 4. Suitable for Real-Time processing 5. Harmless to the human body 6. Non-destructive to material Detectable Defects 1. Delamination 2. Package Crack 3. Die Crack 4. Void Report done by, Lee Kok Yew

Page 24

5. Die Tilt When is SAT testing necessary for qualification? 1. New packages 2. New assembly sites 3. Assembly site BOM changes (mold compound, die attach, lead frame) 4. Fab backmetal changes (high power dissipation products) 5. Fab passivation or die coat changes 6. New products in qualified packages if the die size is 1.15X or greater than the largest previously qualified die size What is the criterion for

passing SAT? 1. Zero delamination over the surface of the die in a clearly defined
SAT MACHINE

region.

Scattered

points of phase inversion are acceptable.

2. Lead fingers cannot be 100% delaminated, including the non-wirebonded area. 3. Wirebond post cannot be 100% delaminated. 4. Zero delamination under the surface of the die in the die attaches material (high power dissipation products only). 5. Zero delamination in the flag area surrounding the die for products that utilize a down-bond process (wires bonded directly to the flag). 6. Delamination from the edge of the package cannot extend into the inner locking feature of the package (e.g. V-groove). For the last 4 weeks I have done many SAT analysis which specialize to detect delamination in a package. Delamination Report done by, Lee Kok Yew

Page 25

Delamination is the disbonding between two surfaces that are supposed to be attached. It is important effects on the semiconductor package have emerged with improvements in its detection. Delamination can occur between the molding compound and any of the following: the die surface, the die paddle surface, the lead frame surface, and the die attach material. Delamination between the molding compound and any of these can lead to failure. Failure mechanisms that can result from die surface delamination include 'first bond' lifting, wire necking, cratering, and intermetallic failures. Die paddle/lead frame delamination, on the other hand, can cause 'second bond' lifting, heel cracking, and even broken wires. Lead frame delamination can also lead to internal package cracking that can allow conductive paths to form, which can result in current leakages. Corrosion is also possible if the delamination reaches the package external, creating a path for contaminants and moisture to enter the package. Cracks in the die passivation can also result from die surface delamination after temperature cycling. Delamination can also lead to package cracking during solder reflow. Plastic package delamination is generally caused by: 1. non-optimized molding parameters 2. excessive temperature gradient across the mold die 3. inferior encapsulation material properties

LID SEAL VOIDS

DELAMINATION

Report done by, DIE CRACK Lee Kok Yew EXAMPLES FOR VOID PACKAGE

BGA DIE ATTACH

Page 26

How does SAT process work? Ultrasound A transducer produces a high frequency sound wave which interacts with the sample. High frequency sound waves cannot propagate through air. Couplant- A material used to carry the high frequency sound waves. Water is the most common couplant for immersion testing.

Inspection Modes Pulse Echo Through Transmission

Sound Reflection Whenever a sudden change in acoustic impedance is encountered, like at a material boundary, a portion of sound is reflected and the remainder propagates through the boundary. By measuring the reflected ultrasound can provide amplitude information,

Report done by, Lee Kok Yew

Page 27

polarity information and time information. There are 3 kinds of acoustics scans which differentiate to ABC. A-Scan- The raw ultrasonic data. It is the received RF signal from a single point (x,y).

B-Scan- A line of A-scans. (Vertical cross-section)

C-Scan-Data from a specified depth over the entire scan area. (Horizontal cross-section.

Inspection modes Pulse-Echo - One Transducer Ultrasound reflected from the sample is used. Can determine which interface is delaminated. Requires scanning from both sides to inspect all interfaces. Provides images with high degree of spatial detail. Peak Amplitude, Time of Flight (TOF) and Phase Inversion measurement

Through Transmission - Two Transducers Ultrasound transmitted through the sample is used. One Scan reveals delamination at all interfaces.

Report done by, Lee Kok Yew

Page 28

No way to determine which interface is delaminated. Less spatial resolution than pulse-echo. Commonly used to verify pulse-echo results.

Digital Oscilloscope Waveform

Gates are used to collect information at desired interfaces within the sample. The gate is placed over the signal or signals of interest. The absolute value of the highest amplitude signal which breaks the gate threshold within the gated region is recorded. (Figure 1) If no signal breaks the gate threshold no data is recorded. (Figure 2) Signal amplitude can be increased or decreased by adjusting gain.

Report done by, Lee Kok Yew

Page 29

In conclude, we use SAT analysis to perform checking on the unit whether there are air gap occur in the unit. Air gap can cause the unit to run malfunction and will lead to the system failure. So SAT scanning is a important scan for every electronic devices.

5.2.2 Wire Sweep Analysis (X-RAY) A wire sweep analysis is used to predict the deformation of the bonding wires within the cavity. It is run as part of the microchip encapsulation molding process. It is used to calculate the deformation of the bonding wires (connecting the chip to the lead frame) that occurs during encapsulation. This calculation enables you to improve the mold design and process conditions to prevent wire-sweep from occurring during encapsulation. The sweep

deflection of wire bond caused by compound flow during the transfer molding process can seriously result in wire crossover and shorting.
A simple X-Ray Machine Model

This is an example of a wire sweep analysis. Beside is a sample image that taken from the X-RAY scope. The tiny wire is connected the die and the post of the unit. In this analysis, we need to determine the percentage of wire sagging that were cause during the molding process. The lesser the percentage of wire sagging is better.
Example of Wire Sweep

Report done by, Lee Kok Yew

Page 30

5.2.3 Cross-Sectioning Cross-sectioning is a failure analysis technique for mechanically exposing a plane of interest in a die or package for further analysis or inspection. It usually consists of sawing, grinding and polishing, until the plane of interest is ready for optical or electron microscopy. Observation in cross-section provides a wealth of information about the IC device such as layer thicknesses, layer structures, and the grain sizes of various crystals in the layers. The first step in cross sectioning is mounting where it will provide convenience in handling specimens of difficult shape or sizes during the subsequent steps during metallographic preparation and examination. Material used is epoxy and hardener. The mixture of resin and hardener will cast onto the specimen in the mould and leave the mixture to cure normally at room temperature. Secondly is grinding, the purpose of grinding is to eliminate gross and plastic deformation due to sectioning. Coarse grinding is done using abrasive paper (silicone carbide paper) starting with 240 mesh, 400 mesh whilst fine grinding is using 600 and 800 mesh. The purpose of polishing is to eliminate the effect of deformation occur during grinding. Thirdly is polishing. Polishing machine consist of soft cloth attached on rotation wheel. Very fine abrasive such as diamond together with lubricant are applied on the cloth. Common diamond sizes are 6, 3 and 1 micron. This step is needed to be done until no scratch will appear under the microscope. Cross section consists of 4 simple steps which is 1. SAMPLE MOUNTING 2. GRINDING 3. POLISHING 4. INSPECTION

Report done by, Lee Kok Yew

Page 31

SAMPLE MOUNTING Sample mounting is take the unit that needed to be grind or inspection purpose to make it become a sample. In order to do that, a certain chemical ingredients are needed to mix together with and left it in a sample mould for it to be harden. Here are the steps for sample mounting. 1. Mount specimen on the lid of the reusable mounting cup. 2. Apply release agent to the reusable mounting cup side wall. 3. Mix 5:1 resin to hardener by weight. Stir until the mixture is warm. Additional 1g of hardener to the mixture is recommended to boost the curing process. 4. Put the mixture in the vacuum impregnation system to de-bubble for 1 minute. 5. Pour the mixture into the mounting cup carefully. 6. Put the mixture in the vacuum impregnation system to de-bubble for 3-4 minutes, switch of the system and keep for 5 minutes. 7. Release the chamber valve, and keep until the resin is fully cured.

Report done by, Lee Kok Yew

Page 32

GRINDING After the sample is harden enough, the sample is being take out from the mould. Now is the grinding process. Grinding is use of grinder machine to cut or grind the sample into a certain level to observe the structure of the unit. It uses sand paper (SiC paper) to grind the unit. There are a certain label of sandpaper needed to follow. It start with 240 grit, 400 grit, 600 grit, 800 grit and lastly 120 grit. Theses sandpaper is being differentiate by the surface smoothness. All begin with rough sandpaper then continuous with a smoother surface until the smoothest and finest sandpaper is being use at last.

Grinding process is stop until the require level of observation of the sample is being found. After that, the sample is needed to polish to have a clearer and better vision.

Report done by, Lee Kok Yew

Page 33

POLISHING The purpose of polishing is to softly grind the ground surface and create a smooth, shinning, less undulation or flat surface by using better shock absorption grinding media. There are two types of polish which are 1. Rough polish remove scratches - Hard cloth Allied Kempad polishing cloth. - Apply diamond suspension 6um & 3um - Less pull-out, abrasive 2. Fine polish to clean up blemishes - Superior scratch removal - Apply diamond suspension 1um - Easily generate surface relief smear - Pull-out effect - Final Polish The procedures for polishing process are below 1. Place the polishing plate on the wheel base. 2. Let runny water on the rotating plate for about 2 minutes to clean the polishing pad. 3. Dry the pad by rotating the plate. 4. Apply necessary lubricant. 5. Polish with lower force. 6. Clean the sample with water and frequent inspect. 7. Final polish the sample for 10-15 seconds. 8. Clean and dry specimen. 9. Wash the polishing pad and dry it.

INSPECTION For small feature, visual inspection at high magnification (mag x500) is required. Frequent inspection during the grinding and polishing process is essential to avoid any overgrinding. Report done by, Lee Kok Yew

Page 34

5.3 FINAL TEST 5.3.1 LOW POWER MICROSCOPE

The low power microscope is quite often used to capture pictures of power packages as it increases the size of the picture so that a clear view of the packages can be taken. There are various sizes where it can focus and measurements can also be taken on these power packages using the low power microscope. A computer is connected to this microscope and the picture can be seen on screen. Tiny power packages are normally enlarged so as to view better images of the packages and usually, it is used to capture pictures of the external surface of the packages and also after decapsulation. It can also be used to see if there are any cracks of the power packages as these cracks cannot be seen by naked eyes. Low power microscope have been use for visual inspection should be carry out to ensure there is no defect on the physical of the product, for example: external void/ bubbles, solder overflow incomplete mold, pitted surface, dirty unit chip/crack casing, lead frame damage, compound overflow, clamp mark, scratches, flashes, and package crack.

Figure 29: Low Power Microscope

Report done by, Lee Kok Yew

Page 35

Package crack- Contamination on leadframe or cutting insert causes dent on the leadframe. Warpage Substrate- The loss of planarity of a plastic encapsulated molded surface, excluding protrusions and intrusions. Resin Bleed - Thin Transparent (sometime light yellowish) layer of mold compound, remaining on leads, which is removable by Deflashing Process. Flashes- Flashes are the excess plastic material sticking out of the package edges right after molding. Flash/ Bleed- Bleed (transparent or light coloured) on leads and die pad at package. External Void/bubbles- Bubbles look alike structure on mold surface. Pitted Surface- Reject for pitted surface > 1mm in length. Crack Casing- Break-away mold compound or crack lines on units. Scratches on Package- Reject for scratches on the top or bottom packages. Leadframe Damaged- Physical damaged to leadframe that make it difficult to process in the downstream machine and has reliability issue. Compound Overflow- Mold compound covers too much of leadframe or substrate and it is difficult to process through the downstream machine.

Report done by, Lee Kok Yew

Page 36

5.3.2 HIGH POWER MICROSCOPE

The functions of a high power microscope are similar to the functions of low power microscope. The difference is just that the high power microscope can enlarge the images of power packages much more compare to the low power microscope. The high power microscope are usually used to capture images of power packages after cross section as it can focused more to the internal of the packages. A computer is also connected to this high power microscope and measurements can also be taken using the software provided. High Power Microscope have been use for visual inspection should be carry out to ensure there is no defect on the physical of the product, for example: oxidation mark, cut mark, abnormality 3, wire mark imprint, solder balling, solder on die, and solder overflow

Figure 30 : High power microscope

Figure 31: Oxidation mark

Figure 32: Cut Mark

Report done by, Lee Kok Yew

Page 37

6.0 PROJECT IN ON SEMICONDUCTOR During my 12 weeks of internship period, I was assigned a task together with another trainee. The task is to come out a mechanism that is able to transfer the unit from one medium to another medium. More precisely, it means the mechanism is enabling the operator to transfer the unit from plastic tube to metal tube and vice versa. We were given a budget of total RM8000 for the design. My partner studied in product engineering so the main idea of the mechanism is mainly design by her as she knows how to use AUTO CAD to design it through computer. I was in charge of the electrical and mechanical part. That is the valve of the mechanism, the air-cylinder and the circuit that control the whole mechanism.

This is the roughly idea of the mechanism that needed to be build out. The mechanism is able to transfer 4 tube of fully loaded unit at a same time. The unit can be flow from metal tube to plastic tube and from plastic tube to metal tube. It is fully control by the mechanical circuit.

Report done by, Lee Kok Yew

Page 38

PURPOSE The purpose of this mechanism is to simplify the operator when transferring the unit from one medium to another. Before that, the unit is being transfer manually by the line operator. It is so troublesome and sometimes the unit being drops out and left it scatter around the floor. It will lead to production losses that will affect to the company.

Unit is being transfer manually by the operator from one side to another.

The metal tube that will be put inside the oven for high temperature testing.

At the end of the day, you can see the unit being drop out during the transferring process.

After being transfer, the unit will be put in the plastic tube and ready to do final packaging.

The unit being scatter around the floor

Report done by, Lee Kok Yew

Page 39

PROCEDURE I will briefly describe the step and procedure for what I have done during the creation and assembly for the mechanism.

Plastic Tube and the dimension that is going to connect in the mechanism

Metal Tube and the dimension that is going to connect in the mechanism

When the two inlet of both tube is connected, there is a small different of error. The plastic tube dimension is slightly bigger then the metal tube. Thus, it causes the unit unable to flow in from 1 of the tube to the other side of the tube.

Report done by, Lee Kok Yew

Page 40

Offset for both plastic and metal tube when connected

Overall idea and the part of the mechanism

Mechanical and electrical part for the mechanism

Report done by, Lee Kok Yew

Page 41

MECHANICAL AND ELETRICAL PART In the mechanism, I was in charge of select and design the suitable mechanical equipment that is usable for the mechanism. The whole mechanism platform is function by the Double Acting Air-Cylinder. The knocker function is to generate a non-stop vibrating to the platform so that the unit will keep on flow from tube to tube. DOUBLE ACTING ARIR-CYLINDER For this mechanism, we are using double acting Air-Cylinder to move the platform upward and downward. Based on the calculation and aspect needed, the type of cylinder that we are using is Compact Cylinder ISO Standards [ISO/21287] C55B-60 From the requirement, we found that the bore size that is needed is 20 mm and stroke size is 60mm. KNOCKER Purpose is to knock the tube (plastic and metal) so that the unit will not stop in between when the platform is being tilt. The knocker will vibrate the tube and cause the unit to flow smoothly. There are 8 knockers on the platform. 4 in the metal tube side and the other 4 in the plastic tube side.

Report done by, Lee Kok Yew

Page 42

CIRCUIT DIAGRAM KNOCKER This is the knocker circuit diagram. The control valve will cycle the air pressure to the knocker to create the pulsation to the knocker. Thus it create a non-stop knocking process until the air pressure is cut off

VALVE AND THE AIR-CYLINDER (moving upward) The piston is moving upward. Air pressure is going in through point A and coming out through point B Using 5/2 valve to control the air flow.

VALVE AND THE AIR-CYLINDER (moving downward) The piston is moving downward. Air pressure is going in through point B and coming out through point A Using 5/2 valve to control the air flow.

Report done by, Lee Kok Yew

Page 43

7.0 PROBLEM Below are some problems that I face during my practical industrial training program. These listed below: The chance for me to communicate to senior engineers as formally is limited. I cannot optimize my ability to enhance my knowledge during an idle time. Some material is confidential; therefore I didnt allow enclosing together with my report. There is limited table and computer for trainee to use during the internship. Therefore, we need to share table and pc with more than 2 people. In the lab, some of the equipments are too expensive; therefore we need our supervisor to accompany us when using it. It is quite troublesome. Some of the places in the production line are forbidden for trainee to go and therefore is limited for us to learn something.

Report done by, Lee Kok Yew

Page 44

8.0 REFERENCES http://sbnportal.onsemi.com http://www.onsemi.com http://newtsbn-a2.onsemi.com http://www.onsemi.com/PowerSolutions/products.do Operation manual Explanation from engineer Observation and experience

Report done by, Lee Kok Yew

Page 45

Anda mungkin juga menyukai