BUX81

MECHANICAL DATA Dimensions in mm (inches)

25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)

6.35 (0.25) 9.15 (0.36)

HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR

38.61 (1.52) 39.12 (1.54)

0.97 (0.060) 1.10 (0.043)

22.23 (0.875) max. 7.92 (0.312) 12.70 (0.50)

29.9 (1.177) 30.4 (1.197)

16.64 (0.655) 17.15 (0.675)

Applications
The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. This device is especially suitable for switchingcontrol amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits.Other recommended applications include DCRF amplifiers and power oscillators.

3 (case) 3.84 (0.151) 4.09 (0.161)

TO204AA (TO3)
PIN 1 Base PIN 2 Emitter Case is Collector.

ABSOLUTE MAXIMUM RATINGS (Tj = 25C unless otherwise stated)

VCESM VCER VCEO IC ICM IB Ptot TSTG TJ Collector Emitter Voltage Collector Emitter Voltage Collector Emitter Voltage(open base) Collector Current (d.c) Peak Collector Current Base Current (d.c) Total Power Dissipation Tmb = 50C Storage Temperature Range Maximum Junction Temperature tp = 2ms VBE = 0 RBE = 100 1000V 500V 450V 10A 15A 4A 150W -65 to +200C +200C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 5865 Issue 1

BUX81

ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise stated)

Parameter
V(BR)CEO V(BR)CER VCE(sat)* VBE(sat)* ICES IEBO fT
Cobo

Test Conditions
IC = 100mA IB = 0 IC = 100mA IB = 0 IC = 5A IC = 8A IC = 5A IC = 8A VCE = 1000V IC = 0 IC = 0.5A IE = 0 IC = 5A IB1 = 1A IB = 1.0A IB = 2.5A IB = 1.0A IB = 2.5A VBE = 0 TC = +125C VEB = 10V VCE = 10V VCB = 20V VCC = 250V IB2 = -2A RBE = 50

Min.
450 500

Typ.

Max. Unit
V V 1.5 3.0 1.4 1.8 1 3 10 mA mA MHz pF 0.5 3.5 0.8 s V

Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current Transition Frequency Output Capacitance f=100kHz TurnOn Time Storage Time Fall Time

8 105

ton ts tf

THERMAL CHARACTERISTICS
Rth j-mb Thermal Resistance Junction to Case 1.65 C/W

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 5865 Issue 1