16. D. Y. Chung et al., Science 287, 1024 (2000). is opposite to what occurs in most semiconductors 23. Y. I. Ravich, B. A. Efimova, I. A. Smirnov, Semiconduct-
17. Materials and methods are available as supporting (in which the band gap widens with falling temper- ing Lead Chalcogenides, T. S. Stil’bans, Ed. (Plenum,
material on Science Online. ature) and similar to what occurs in PbTe (23). At the New York, 1970), pp. 323–346.
18. D. Y. Chung et al., Chem. Mater. 9, 3060 (1997). same time, the electron mobilities are markedly high 24. L. Genzel, Z. Phys. 135, 177 (1953).
19. These data were obtained with the flash diffusivity– for both x ⫽ 0.55 and 0.67 samples at ⬃800 cm2/V䡠s 25. S. Loo, T. Hogan, in preparation.
specific heat method at the Thermophysical Proper- and similar to those reported for the MBE-grown
ties Research Laboratory, West Lafayette, IN (www. thin-film superlattice PbSe/PbTe systems (15). 26. Financial support from the Office of Naval Research
tprl.com/). The sample configuration was in the form 21. D. Bilc et al., in preparation. and Defense Advanced Research Projects Agency is
of a flat disk of ⬃14-mm diameter and 2.5-mm 22. The power conversion efficiency of a thermo- gratefully acknowledged.
thickness. element is given by Supporting Online Material
20. Hall measurements of samples with m ⫽ 18 and
⫽ (⌬T/T hot)[(1⫹ZT ave)1/2–1]/ www.sciencemag.org/cgi/content/full/303/5659/818/
1 ⫺ x ⫽ 0.55 and 0.67 were carried out as a function
of temperature. The carrier concentrations (elec- DC1
[(1⫹ZT ave)1/2⫹(T cold /T hot)] Materials and Methods
trons) at room temperature were ⬃2.15 ⫻ 1019 and
⬃1.9 ⫻ 1019 cm⫺3, respectively. Carrier concentra- where ⌬T is the temperature difference across the Fig. S1
tions rise sharply with falling temperature, suggesting device. The first fraction in this expression is the
a narrowing of the band gap in these materials. This Carnot efficiency. ZT is defined in (1). 27 October 2003; accepted 11 December 2003
Rheology and Microscopic the time or frequency interval for which the
plateau in the shear relaxation modulus