SiGe(C) MOSFET Technology

Sanjay Banerjee
University of Texas at Austin

• Issues in Scaled CMOS

• Bandstructure, Transport and Strain
• Enhanced Mobility Channels
- Strained Si and SiGe(C)
• Multi-Gate and Novel MOSFETs
• Process Integration Challenges

1
ITRS, 2003

2
 3
Streetman and Banerjee, Solid State Electronic Devices, Prentice Hall
 For LONG channel
W  1 
ID = µ C 0 X  (V G − V T ) V D − V D 2 
L  2 

W  1 
I DSAT = µ C0 X (VG − VT )VDSAT − VDSAT 2 
L  2 

where[VDSAT = (VG − VT )]

W 1 
I DSAT = µ C0 X  VDSAT 2 
L 2 
For SHORT channel,

I D ≈ WCOX (VG − VT ) vsat

Experimental output characteristics of n-channel and p-channel MOSFETs with 0.1 micron channel
lengths. The curves exhibit almost equal spacing, indicating a linear dependence of ID on VG, rather
than a quadratic dependence. We also see that ID is not constant but increases somewhat with VD
4
in the saturation region. The p-channel devices have lower currents because hole mobilities are
lower than electron mobilities.
  1 − rc 
I DSAT = [COWvT ] (VG − VT )
 1 + rc 
5
For short “quasi-ballistic” MOSFETs, current is limited by source-to-channel injection of thermal carriers. Since,
here the longitudinal field is low, this injection is limited by low field mobility. (Natori and Lundstrom)
6
 Compressive Strain in Si1-xGex

• Si1-xGex Bulk Properties.

– 0 to 100% Ge possible
– Lattice constant and bandgap
given by Vegard’s Law:
aSiGe ( x ) = aSi (1 − x ) + aGe ( x )
• Si1-xGex on Si
– Up to 4.2% lattice mismatch
Relaxed
– Strained epitaxial layers 104
– Tetragonal distortion breaks

Critical Thickness (nm)

degeneracy in the bandstructure. 103

102 Metastable

101

100 0 20 40 7 60
Ge Conc. (%)
 “Effective mass” !2
m =
*

 d 2E 
 2 
 dk 

eτ
3
µ=
m
* m*
g c (E ) = 4π   (E − Ec )2
2 1
de
2
 h −1
1  1 1 
( )
1
m =
*
m1* m2* m3* 3 m = 3 * + * + * 
*

 m1 m2 m3 
Bandstructure effective mass, m*, is inversely related to curvature of bands, and
depends on crystal orientation.
Density of states m* is related to geometric mean of bandstructure m*. Must
count number of “equivalent” valleys. 8
Conductivity m* is harmonic mean of bandstructure m*.
 Si-based Strained Materials

CB

direction
direction

growth
growth

VB
Bulk Si CS-SiGe

E E
LH CB
k k

HH VB
LH HH TS-Si Relaxed
CS-SiGe TS-Si SiGe
9
Calculated Electron and Hole Mobility of Strained SiGe
Hole mobility with/without alloy scattering in plane and out-of-plane

Electron mobility with/without alloy scattering in plane and out-of-plane

Ge MOLE FRACTION

Fischetti and S.E. Laux, J. Appl. Phys. 80 (4), 1996

10
Monte Carlo calculations of minority hole mobilities in Si1-xGex for four doping
levels (in cm-3) at 300 K: dot-dashed line is the vertical mobility of strained
Si1-xGex, solid line is the mobility of unstrained Si1-xGex, dashed line is the planar
mobility of strained Si1-xGex.

FM Bufler, P Graf, B Meinerzhagen, G Fischer, H Kibbel. Hole transport investigation in unstrained and 11
strained SiGe. J. Vac. Sci. Technol. B 16(3), pp. 1667-1669, 1998.
 Ultra High Vacuum Chemical Vapor Deposition

• Base pressure: ~10-10 Torr

• Cold wall, load locked system
• Low deposition pressures
• 1 to 10 mTorr
• ~500o C growth temperature
• Gases
• Si2H6, GeH4, CH3SiH3
• B2H6, PH3

• Can use hot wall UHVCVD or RTPCVD

12
13
Strained Si-on-SiGe Buffer

14
Inversion Layer Mobility
Strained Si mobility
enhancement may be
due to reduced
surface roughness,
rather than
bandstructure
(Fischetti)

15
 Strained Si NMOSFET Monte Carlo Simulations
1000

800 Welser et al.

600 Rim et al.

Takagi et al.
400
MCUT, γ = 0.0
200 MCUT, γ = 0.2
MCUT, reduced SR, γ = 0.2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Normal Effective Field ( MV/cm )

!MOSFET (Tox= 2 nm) K. K. Rim et. al., IEEE Trans. on Elec. Dev., 47 (7), pp. 1406, 2000
! MIT well-tempered device structure:http://www-mtl.mit.edu/Well/device50/topology50.html
!1-D Schrödinger equation for quantum correction
!As suggested by Fischetti et. al., J. Appl. Phys., 92 (12), 2002), surface roughness reduction may
play a role in mobility increase in strained-Si devices. 16
 Current enhancement in Strained Si NMOSFET

Average Drift Velocity (10 cm/s)

700 S-Si, γ=0.2 BSi 0.1 V SSi 0.1 V
Bulk-Si BSi 0.3 V SSi 0.3 V
600

7
S-Si, γ=0.2, reduced SR BSi 0.6 V SSi 0.6 V
3
Vg - VT = 2.0 V
500 BSi = Unstrained Si
Id ( µA/µm )

SSi = Strained Si on Si0.8Ge0.2

400
2 Tox = 67 A
L = 50 nm
300 VG - VT = 0.5 V
200 Vg - VT = 1.0 V
1
100

0 0
0.0 0.4 0.8 1.2 1.6 2.0 0.07 0.08 0.09 0.10 0.11 0.12 0.13
Vd (V) Channel Position (um)

17
 Strained Si p-MOSFETs
ε-Si on Si0.7Ge0.3
ε-Si on Si0.65Ge0.35

Mobility Enhancement over Cz-Si

1.7 ε-Si on Si0.6Ge0.4
*Lee and Fitzgerald,
1.6
Adapted MARCO, 2004
from Leitz et
al. J.Appl.

1.5
Phys. 92, *Rim et al. IEDM
3745 (2002)
(1995).
1.4 Nayak et al. IEEE
Trans. on Elec.
1.3 Dev. 43, 1709
(1996)
1.2
2.5x10
12 12
5.0x10 7.5x10
12
1.0x10
13
**Rim et al.
Ninv per cm
2 Symposium on
VLSI
• µeff enhancement decreases with gate Technology
(2002)
overdrive* for holes
– No p-channel enhancement at Eeff = 1 MV/cm** for x = 0.28
– Physical mechanism poorly understood
Performance benefits of ε-Si primarily from n-MOSFET 18
Mobility enhancement in tensile and compressively strained Si

19
Mobility with Strain (Courtesy: Yu)

20
 SiGe strain- and band-
engineered heterostructures
2DEG
Ec Ec

ε-Si Relaxed Si1-xGex ε-Si1-yGey Relaxed Si1-xGex

Ef Ef

Increasing y

Ev Ev
Increasing x

• Relaxed Si1-xGex virtual substrates allow

– Si-rich alloys in biaxial tension (a║/ao > 1)
• Type-II band offset → Two-dimensional electron gas
• Barrier for holes
– Ge-rich alloys in biaxial compression (a║/ao < 1)
• Type-I band offset → Two-dimensional hole gas
21
• Cannot confine electrons
 Dual-channel heterostructures
ε-Si1-yGey
Ec

ψ decays in ε-Si ε-Si Relaxed Si1-xGex

due to deep well in Ef

Si1-yGey
Ev

ψholes

• Cannot confine ψ in one channel or another

– Different from traditional buried-channel device
• ε-Si1-yGey layer beneath ε-Si boosts µeff even at large Ninv, high Eeff
• ε-Si is more than just a “cap” 22
– Enhanced hole mobility*, different from pseudomorphic SiGe devices
 23
Ge, et. al, IEDM 2003
 24
Sanuki, et. al. IEDM 2003
Electronic Properties of Strained Si1-xGex
a||

a⊥

aSi
∆6 ∆E c
∆4
Relaxed Strained
Si Si 1-x Ge x

HH
HH & LH
∆E v

Type-I (Compressive)

25
 SiGe MOSFET Structure

Poly
Oxide Ec
SiGe

Energy
Si Substrate Ev
∆Ev

Depth

• Typical MOS structure

– Si1-xGex channel with Si cap
leads to buried channel, and
lower gate capacitance
• Si cap
– Used for oxidation
– Also acts as a parasitic channel,
leading to gate operating 26
“window” Z.Shi, ..S. Banerjee “Simulation and optimization of strained Si1-xGex
buried channel p-MOSFETs,” Solid State Electronics, 44 (7): 1223, 2000.
Output, sub-threshold,
and mobility-field
characteristics of
70nm Si0.9Ge0.1-SiO2
buried channel
PHFET.
E. Quinones,..S.Banerjee “Design,
Fabrication, and Analysis of SiGeC
27
Heterojunction PMOSFETs,”
IEEETrans.Elec.Dev., Sept. 2000.
Subthreshold and mobility-field characteristics for 180nm Si0.8Ge0.2-HfO2 PHFETs
and control Si PMOSFET.
Recovery of mobility degradation for high-k gate dielectrics with enhanced-
mobility channels: (Onsongo,.., Banerjee)
28
T.Ngai, J.Lee, S.Banerjee, “Electrical Properties of ZrO2 Gate Dielectric on SiGe,” Appl. Phys. Lett., 76(4),
p. 502, Jan. 2000.
 Addition of C to Si and Si1xGex

Carbon Concentration
• Carbon has a smaller lattice constant Carbide
– Strain compensation of SiGe (~8:1) Amorphous
– Tensile strained Si-C on Si
Islanded
Twinned
• Low solubility in Si Alloy
– Need low temperature growth to incorporate
C due to low solubility (5x1017 cm-3) Temperature
– Growth window for alloy growth
A. R. Powell, K. Eberl, B. A. Ek, and S. S. Iyer,
• Carbon ∆Ev=21-26meV/%C in SiGeC "Si1-x-yGexCy growth and properties of the
ternary system," Journal of Crystal Growth Vol.
(Lanzerotti, EDL,1996) 127, pp. 425, 1993.
– Ge ∆Ev=25 meV/3% Ge
Si Si1-yCy
• Carbon ∆Ec=75-90 meV/%C for SiC ∆(6) ∆4
CB
– (Faschinger, APL, 1995)
∆2

K. Eberl, K. Brunner, W. Winter,

“Pseudomorphic Si1-yCy and Si1-x-yGexCy
alloy layers on Si,” Thin Solid Films, Vol. VB
hh, lh lh
294, pp. 98, 1997. 29
hh
 Carbon Strain Compensation
-3
-3 10

Bare Si
0% C, 40% G e
-3
-2.5 10 1% C, 40% G e V -V =-4V
G T
1.5% C, 40% Ge

-3
Red = after processing
-2 10
Blue = as grown
)
A( -3
Si0.795Ge0.2C0.005
-1.5 10
ID

-3
-1 10

-4
-5 10

V -V =-2V
G T
0
0 10 Si0.8Ge0.2
0 -1 -2 -3 -4 -5

V (V)
D

Si0.585Ge0.4C0.015 shows 55% drive current

enhancement over bulk Si and 42%
enhancement over Si0.6Ge0.4
W/L= 10/0.5 um; tox= 6 nm
XRD Rocking Curves 30
S.Ray, .. S.Banerjee, “Novel SiGeC Channel Heterojunction PMOSFET,” Proc. of Int. Elec. Dev.Meet., 1996.
 Electronic Properties of Strained Si1-xGex

[001]

[010]
]
00
[1

• Strain splits the six fold degeneracy of

conduction band valleys.
• The four-fold in-plane valleys are • Hole mobility increases with Ge fraction.
lowered, leading to less f-type scattering. – Valence band splitting with strain
• Carriers have a lower out-of-plane and results in reduced scattering.
higher in-plane mass. – Reduction of effective hole mass with
strain due to VB warpage
• Electron mobility dependent on
directions: increase in ⊥, decrease in || – Increase in both ⊥ and || mobilities
• To enhance electron mobility for the
planar NMOSFETs, tensile strained Si 31
has to be used. Chen XD,.. Banerjee SK, Hole and electron mobility enhancement in strained
SiGe vertical MOSFETs, IEEE T ELECTRON DEV 48 (9): 1975-1980 SEP 2001
Hole mobility in Strained SiGe

32
 Mobility in Relaxed SiGe

-4 0

Si
Vertical Si, relaxed and R e l. S iG e
S t r . S iG e
-3 0
strained Si1-xGeX PHFETs W /L = 1 2 0 µ m /7 0 n m V - V = -1 .5 V
showing enhancement of
I (mA)

GS T
T ox=4nm
-2 0
D

drive current over Si

MOSFETs only in the -1 0 - 0 .5 V

presence of strain. 0
0 V

NHFETs also enhanced! 0 -0 .5 -1

V
-1 .5
(V )
-2
33 -2 .5

Jayanaran & Banerjee, EMC 2004 DS

 Ge MOSFETs
Ge Si
µn 3900 1500
(cm2/Vs)
µp 1900 450
(cm2/Vs)
Eg (eV) 0.66 1.12
Rosenberg et al. EDL 9, 639 (1988), Shang et al. IEDM(2002),
Chui et al. IEDM (2002), Bai et al. VLSI (2003)

A. Ritenour et al., IEDM, p.433, 2003

• Bulk Ge has higher electron (2.5x) and hole (4x) mobility than Si, and can potentially
lead to faster MOSFETs and more balanced N vs. PMOSFETs.
• Germanium bulk substrates brittle, lower thermal conductivity (0.6W/cm-K vs. 1.5 for Si)
• Smaller Ge bandgap than Si broadens absorption spectrum; optoelectronic integration
on CMOS?
• Native oxide on Ge surface is not stable; GeO2 water soluble, GeO volatile at low T.
Deposited high-k gate dielectrics promising
• Performance much worse than expected, especially for NMOSFETs, probably because
of poor interface between Ge and high-k gate dielectric, as well as poor dopant
activation and interface between metal- source/drain
• Higher junction leakage in Ge, especially at high T 34
• Higher dielectric constant in Ge leads to worse electrostatics (DIBL, SS)
 UHVCVD Ge-on-Si NMOS w/o SiGe buffer with PVD HfO2 and TaN gate
1 3
Ig(A)/cm2 High frequency (1MHz) and
calculated low frequency
2.5
0.1 L=10um, W=100um

Capacitance(uF/cm )
EOT=1.1nm

2
2
0.01

2
Ig(A)/cm
1.5

0.001 EOT=1.1nm
1
L=10um, W=100um
0.0001 0.5

0
0 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2
-2 -1.5 -1 -0.5 0 0.5 1 1.5 2
V (V)
V (V) G
G
10.0

8.0
Vg=0.1V
L=2um, W=5um Vg=0.6V
-5
10 6.0 Vg=1.1V

I (uA/um)
Vg=1.6V
Vg=2.1V
-7
10 4.0

S
SS=170mV/dec
I (A/um)

-9 V ~0.3V 2.0 L=2um, W=5um

10 t
S

Vds=0.1V
-11 Vds=0.6V 0.0
10 Vds=1.1V 0 0.5 1 1.5 2 2.5
Vds=1.6V V (V)
Vds=2.1V DS
-13
10
-1 -0.5 0 0.5 1 1.5 2 2.5 3
35
V (V)
GS
Donnelly, .., Banerjee, SRC 2004
 Effect of strain in Ge layer
Si0.5Ge0.5 % Compressive strain in Ge
1800 Si0.4Ge0.6 2 1.6 1.2 0.8 0.4 0
12
1600 Si0.3Ge0.7
Effective mobility (cm / Vs)

Experimental

Hole mobility enhancement

1400 x ↓, εGe ↑,µeff ↑ Si0.2Ge0.8 10 values computed at
Ninv = 8×1012/cm2
2

1200 Si0.1Ge0.9
Ge 8
1000 Cz-Si
800 6
600
4 Experimental
400
Theoretical
200 2
0
2 4 6 8 10 12 14×10
12 0
2 0.5 0.6 0.7 0.8 0.9 1.0
Ninv per cm Ge fraction in virtual substrate

*Lee et al.
Appl. Phys. • Higher strain in the Ge layer favors high µeff* **M. V.
Fischetti
Lett. 79,
3344 (2001). – x ≤ 0.7 and S.
E. Laux,
Lee et al. in • reasonable agreement with theoretical calculations** J. Appl.
Mater. Res. Phys.
Soc. Symp. – x ≥ 0.8 80,
Proc., vol. (1996).
686, • rampant defect nucleation in Si cap, µeff depressed 36
A1.9.1(2002)
.
 3-D Transistor Structures

top gate
100 nm
G
S D IBM ‘97

source bottom gate drain

S G D Berkeley ‘99

G Lucent ‘99

37
Mark Bohr, ECS Meeting PV 2001-2, Spring, 2001
 Strained-Si PMOSFET on SiGe-on-Insulator

Tensile Strain G SiO2

Gate
S D n+-Poly Gate
(200 nm)
Strained Si SiO2 (9 nm)

p+ Relaxed p+
Si1-xGex Strained-Si (20 nm)

Buried SiO2 Si0.9Ge0.1 (340 nm)

SiGe Buffer
Buried-Oxide (100 nm)
Si Substrate

38
T. Mizuno et al., IEDM, 934-936 (1999)
 SSOI with thin SiGe buffers w/o misfits
using BPSG compliant substrates

39
Rim, et. al. & Sturm et. al. (IEDM, 2003)
 High mobility heterojunction transistor (HMHJT)

• A Si/SiGe/Si quantum well is

used to increase the drive
current.

• The bulk punchthrough, DIBL

and floating body effect are
still suppressed due to
heterojunction in the deep
source/drain region.

Q.Ouyang, X.Chen, ..A.Tasch, S.Banerjee, “Bandgap Engineering in Deep

Submicron Vertical PMOSFETs,” Dev. Res. Conf., 2000.
40
 Energy Band Diagram and Hole
Concentration of HMHJT in the Channel

2.5
21
10
2 HJMOSFET HJMOSFET

Hole Concentration (cm )

HMHJT Drain HMHJT

-3
Si
1.5 Si 20
10 V =V =-2V
DS GS
E (eV)

V =V =-2V
1 DS GS
v

1nm from the surface

0.5 19
10
Source Channel
0
18
-0.5 10
-0.05 0 0.05 0.1 0.15 -0.05 0 0.05 0.1 0.15
µm)
Distance along the channel (µ µm)
Distance along the channel(µ

41
 Subthreshold and Output Characteristics for HMHJT

-8
10
-3 Si control device
-7
HMHJT
-5
-6 V -V =0, -0.5, -1, -1.5, -2V
10 G T
-5

ID (mA)
Si control
ID (A)

10
-7 HMHJT -4
-3
-9
V = -0.1, -0.6, -1.1, -1.6 V
10 DS
-2
-1
-11
10
-3 -2.5 -2 -1.5 -1 -0.5 0 0
-2 -1.5 -1 -0.5 0
V (V)
GS V (V )
DS

42
 Process Issues

• STI edge leakage can be increased by SiGe buffer.

• B diffusion enhanced by tensile strain; compressive retards it.
Ge retards B and enhances As/P diffusion in SiGe buffer.
• Need higher doping in channel due to reduced bandgap-
negates some advantages of strain
43
Defects in Strained Si

44
Takagi, et. al, IEDM 2003

45
 Device Metrics
• Speed
• τ = Cload VDD / Id
• Power
• P = f Cload VDD2
• Saturation current
• IDSAT = (W/2L) (krkoA) (TEOT,INV)-1 µ (VG-VT)2
• Consider VG ⇒ VDD
• Transconductance
• gm = (W/L) (krkoA) (TEOT,INV)-1 µ VDSAT
• Off-state power
• Subthreshold swing and source/drain junction leakage

46