DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGG EC2403-RF AND MICROWAVE ENGG QUESTION BANK PART A UNIT I 1.

What is the difference between low frequency and high frequency network parameters? 2. What are the different types of low frequency parameter networks? and give its equations. 3. Why the open circuit and short circuit is not possible in high frequency microwave devices? 4. What do you mean by scattering matrix? Write down the S matrix equation for the two port network and explain its term. 5. What do you mean by reflection coefficient? What is the value of S in terms of Reflection coefficient? 6. What do you mean by reciprocal device? Give example. 7. Why the ABCD parameters are called the transmission parameter? 8. What are the differences among the the low frequency and high frequency resistors ,inductors and capacitors. 9. Give X-band frequency range. UNIT II 1. What is impedance matching? 2. What is the difference between L section impedance matching and T section matching network? 3. What is the difference between the section matching and strip line matching network.? 4. What is single stub matching? 5. What is double stub matching? 6. What is the gain of the amplifier in terms of the reflection coefficient? 7. Draw the block diagram of the amplifier network with its both source as well as load matching networks. 8. Give the Maximum power transfer gain value of amplifier in terms of S parameters. 9. What do you mean by the noise figure of an amplifier.

UNIT III 1. What are the basic types of directional couplers? 2. List the application of waveguide twist. 3. State the principal advantage of microwave frequencies over lower frequency. 4. Find the ABCD matrix of a transformer with N:1 turns. 5. Gi ve the relationship between Z and S matrices. 6. What is hybrid ring? 7. What is rat race T? 8. State the unity property of S parameters. 9. State the zero property of S parameters. 10.State the phase shift property of S parameters. 11.Write the S matrix of a four port microwave circulator. 12.Give the advantages of co axial connectors. 13.What do you mean by the coupling factor of the directional coupler? Give its equation in terms of powers. 14.What are directivity and isolation of the directional coupler? Write down its equation. 15.Give 4 differences between E plane and H plane Tees. 16.Give any four differences of rat race tee and Hybrid tee. 17.Give any two differences of magic tee and directional coupler. 18.State the primary functions of a microwave Isolator. 19.A cavity resonator having dimensions a=2cm,b=1cm exited by TE101 mode at 20 GHz. Calculate length of cavity. 20.Calculate the attenuation of rotary vane attenuator if the angle of the rotation is 34 degrees. UNIT IV 1. 2. 3. 4. Write the working principle of Varactor diode and step recovery diode. State the transferred electron effect. State the Avalanche transit time effect. Define transit time?

5. Mention any two applications of Paramertric Amplifier. 6. What do you understand by monolithic microwave integrated circuits? 7. List out the advantages of MMIC. 8. What are the applications of Tunnel Diode? 9. What are the elements that exhibit Gunn Effect? 10. What are the applications of Gunn Diode? 11. What is negative resistance? 12.What are the applications of backward diode? 13.Why is FETs preferred to bipolar transistor at high frequencies? 14.What is the main advantage of TRAPATT over IMPATT? 15.Define GUNN EFFECT. 16.What is MESFET? 17.Explain stable amplification mode. 18. What are the factors reducing efficiency of IMPATT diode? 19.What is negative resistance in Gunn diode? 20.What are the applications of GaAs MESFET? 21.List the type of circuit used for IMPATT diode circuits. 22. What are time parameters for TED S? 23. What are the various modes of transferred electron oscillators UNIT V 1. 2. 3. 4. 5. 6. 7. 8. 9. Why do we require measuring VSWR in a microwave circuit? Define Insertion loss. What are the assumptions for calculation of RF power in Reflex Klystron? What is the condition for oscillation in Reflex klystron? Give the drawbacks of klystron amplifiers. What is the effect of transit time? What are the applications of reflex klystron? What is the purpose of slow wave structures used in TWT amplifiers? How are spurious oscillations generated in TWT amplifier? State the method to suppress it? 10.State the applications of TWT. 11.How the klystron amplifier can act as klystron oscillator? What are the Applications of klystron amplifier? 12. Define phase focusing effect. 13. What do you mean by O-type tubes and M-type tubes? Name some O-type

tubes and M-tubes 14. Define Transit time in Reflex klystron. 15. Write the parameters on which bunching depend on? 16. Compare TWTA Klystron amplifier 17. Give the performance Specification of Reflex klystron? 18. State the characteristics of magnetron and of 2-cavity klystron amplifier. 19. What are the advantages of TWT? 20. State the applications of magnetrons. Why magnetron is called as cross field Device? 21.Define dielectric constant? 22.How the S-parameter of a microwave circuit measured? 23.List the methods for measuring dielectric constants? 24.What is the other name for O- type tubes? Why? 25.Mention two methods to measure impedance. 26.Define Beam loading.

PART B UNIT I 1. Derive the expression for S matrix representation of multi-port network (16) 2. Explain about properties of S parameters (16) 3. (a)Explain symmetrical Z and Y matrices for reciprocal network. (8) (b)Comparison between [S],[Z] and [Y] matrices. (8) 4. Two transmission lines of characteristic impedance Z1 and Z2 are joined at plane pp.Express S parameter in terms of impedances. (16) 5. a) Prove AD-BC=1 (for reciprocal network)(8) b) Derive the values of S parameters in terms of ABCD parameters(8) 6. Find the Z parameters of T and PI network having 20 ohms in series arm and 10 ohms in their shunt arm. Obtain the other low frequency Parameters. (16)

UNIT II

1. Derive the Transfer gain for an amplifier when the maximum power is delivered to the load with the neat diagram. (16) 2. Discuss the addition power gain and noise figure of an amplifier (16) 3. What are the various types of impedance matching methods? Briefly discuss about each method.(16) 4. Compare different method of impedance matching in terms of advantages and disadvantages.(16) 5. Discuss the single stub matching with an example. (16) 6. Discuss the double stub matching with an example. (16) UNIT III 1. Derive the S-matrices for E-plane and H-plane tee? (16) 2. Derive the S-matrices for magic tee? (16) 3. Derive the S-matrices for Directional coupler? (16) 4. (a)Explain about Faraday law of rotation(8) (b)Explain the concept of waveguide corners bends and twists (8) 5. (a) Explain in detail about Attenuator? (8) (b) Explain the concept of phase shifters? (8) 6. .Explain in detail about Isolator and Faraday rotation of Isolator? (16) 7. Explain the concept of circulator and derive the s-matrices for Three port and four port circulator? (16) 8. A magic T is terminated at collinear ports 1 and 2 and difference port 4 by impedances of reflection coefficients G1=0.5, G2=0.6 and G4=0.8 respectively. If 1W power is fed at sum port 3, calculate the power reflected at port 3 and power transmitted to other three ports. (16) UNIT IV 1. Explain in detail about Gunn diodes and modes of operation? (16) 2. Describe the conceptual view of IMPATT diodes? (16) 3. Explain in detail about tunnel diode amplifier with neat energy band diagram and VI characteristics.(16) 4. Explain the concept of varactor diode and step recovery diode (16) 5. Describe the conceptual view of VCO-parametric amplifier? (16) 6. Explain in detail about microwave bipolar transistor? (16) 7. Explain the concept of microwave unipolar transistor? (16) 8. What is Transferred electron effect? Explain some of the TEDs? (16) 9. Explain the operation of TRAPATT and BARITT diodes (16) 10. Explain the MMIC fabrication techniques with relevant diagrams.(16) 11. List out at least Five characteristics of different materials used for MMIC

fabrication process(16) 12.Explain Gunn Effect. Compare Gunn, IMPATT, TRAPATT and BARITT diodes. (16) 13.What are the high frequency limitations of bipolar devices? Draw the equivalent circuit of bipolar transistor. Mention the various biasing circuits available. 14.Derive Manley-Rowe power relation and hence explain the parametric up converter. UNIT V 1. With neat circuit diagrams and relevant equations, explain the velocity modulation process and Bunching in a klystron amplifier? (16) 2. Derive the equation for power output and efficiency of two cavities and four cavity klystron Amplifiers. (16) 3. With neat diagrams and relevant equations, explain about helix Traveling wave tube. (16) 4. With neat diagram, explain about Magnetron (16) 5. Derive the hull cut off voltage and magnetic field of the cylindrical magnetron.(16) 6. Obtain the round trip transit time equation of the reflex cavity Klystron from the basic principle of operation with neat diagram.(16) 7. Discuss in detail the power and impedance measurement using microwave devices (16) 8. Write a brief note on insertion loss and attenuation measurements. (16) 9. Explain in detail about the dielectric constant measurement of a solid using waveguide. (16) 10.Explain the measurement of cavity Q by slotted line method.