APM9435

P-Channel Enhancement Mode MOSFET

Features

-30V/-4.6A, RDS(ON) = 52m(typ.) @ VGS = -10V RDS(ON) = 80m(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package

Pin Description

S S S G

1 2 3 4

8 7 6 5

D D D D

Applications

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
G

SO 8
S S S

Ordering and Marking Information

APM 9435
H a n d lin g C o d e Tem p. R ange P ackage C ode

D D D D

P-Channel MOSFET

P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & Reel

APM 9435

APM 9435 XXXXX

X X X X X - D a te C o d e

Absolute Maximum Ratings

Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter

(TA = 25C unless otherwise noted)

Rating -30 25 TA = 25C -4.6 -20 Unit V A

Maximum Drain Current Continuous Maximum Drain Current Pulsed

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 1 www.anpec.com.tw

APM9435
Absolute Maximum Ratings
Symbol PD T J) T STG R JA Parameter Maximum Power Dissipation T A = 25C T A = 100C Maximum Operating and Storage Junction Temperature Thermal Resistance - Junction to Ambient

(TA = 25C unless otherwise noted)

Rating 2.5 1.0 -55 to 150 50 Unit W C C/W

Electrical Characteristics
Symbol Static BV DSS IDSS VGS(th) IGSS R DS(ON) VSD Dynamica Qg Q gs Q gd td(ON) tr td(OFF) tf C iss C oss C rss Notes
a b

(TA = 25C unless otherwise noted)

APM9435 Unit Min. Typ a. Max. -30 -1 -1 -3 100 52 80 -0.6 60 95 -1.3 m V V uA V nA

Parameter

Test Condition

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b b

V GS=0V, ID =-250A V DS=24V, VGS =0V V DS=VGS, ID=250A V GS=25V, VDS =0V V GS=-10V, ID =-4.6A V GS=-4.5V, ID=-2A ISD=-3A, VGS=0V

Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V DD=-25V, R L=12.5, ID=-2A , VGEN=-10V, R G=6, V GS=0V, V DS=-25V Frequency = 1.0MHZ V DS=-15V, VGS =-10V, ID=-4.6A

22.5 4.5 2 8 8 35 11 845 120 80

29 nC 17 18 60 28 ns

pF

: Guaranteed by design, not subject to production testing : Pulse test ; pulse width 300s, duty cycle 2%

Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

www.anpec.com.tw

APM9435
Typical Characteristics

Output Characteristics
20
-VGS=5,6,7,8,9,10V -V GS =4V

Transfer Characteristics
20

-ID-Drain Current (A)

10
-V GS=3V

-ID-Drain Current (A)

15

15

10

TJ=25C

5
TJ=125C

TJ=-55C

10

-VDS - Drain-to-Source Voltage (V)

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50 0.16
-IDS=250A

On-Resistance vs. Drain Current

-VGS(th)-Threshold Voltage (V) (Normalized)

RDS(on)-On-Resistance ()

1.25 1.00 0.75 0.50 0.25 0.00 -50

0.14 0.12 0.10 0.08 0.06 0.04 0.02 -25 0 25 50 75 100 125 150 0.00 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0
-V GS=10V -VGS=4.5V

Tj - Junction Temperature (C)

-ID - Drain Current (A)

Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

www.anpec.com.tw

APM9435
Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.30
-ID=4.6A

On-Resistance vs. Junction Temperature

2.00
-VGS=10V -ID=4.6A

RDS(on)-On-Resistance ()

RDS(on)-On-Resistance () (Normalized)
1 2 3 4 5 6 7 8 9 10

0.25 0.20 0.15 0.10 0.05 0.00

1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50

-25

25

50

75

100

125

150

-VGS - Gate-to-Source Voltage (V)

TJ - Junction Temperature (C)

Gate Charge
10

Capacitance
1200
Frequency=1MHz

-VGS-Gate-Source Voltage (V)

-V DS =15V -IDS=4.6A

1000
Ciss

Capacitance (pF)

800 600 400 200 0

Coss Crss

0 0

10

15

20

25

10

15

20

25

30

QG - Gate Charge (nC)

-VDS - Drain-to-Source Voltage (V)

Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

www.anpec.com.tw

APM9435
Typical Characteristics

Source-Drain Diode Forward Voltage

20

Single Pulse Power

80 70 60

10

-IS-Source Current ()

Power (W)

50 40 30 20 10

TJ=150C

TJ=25C

0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0 0.01

0.1

10

30

-VSD-Source-to-Drain Voltage (V )

Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient Thermal Impedance

1
Duty Cycle = 0.5

D= 0.2 D= 0.1

0.1

D= 0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted

D= 0.02

SINGLE PULSE

0.01 1E-4

1E-3

0.01

0.1

10

30

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

www.anpec.com.tw

APM9435
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)

e1 D

e2

A1

1 L

0.004max.

Dim A A1 D E H L e1 e2 1

Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013

0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8

Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

www.anpec.com.tw

APM9435
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

temperature

Peak temperature

183C Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.

60 seconds 215-219C or 235 +5/-0C 10 C /second max.

Package Reflow Conditions

pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

APM9435
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles

Carrier Tape & Reel Dimensions

E Po P P1 D

F W

Bo

Ao

D1 T2

Ko

J C A B

T1

Application

A 330 1

B 62 +1.5 D

C 12.75+ 0.15 D1

J 2 0.5 Po

T1 12.4 0.2 P1

T2 2 0.2 Ao

W 12 0. 3 Bo 5.2 0. 1

P 8 0.1 Ko

E 1.750.1 t

SOP- 8

F 5.5 1

1.55 +0.1 1.55+ 0.25 4.0 0.1

2.0 0.1 6.4 0.1

2.1 0.1 0.30.013

Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

www.anpec.com.tw

APM9435
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500

Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369

Copyright ANPEC Electronics Corp. Rev. A.4 - Mar., 2003

www.anpec.com.tw