SMPS IGBT
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGP50B60PD1
VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A
Applications
Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
G E
Features
NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability
n-channel
E C G TO-247AC
Benefits
Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 150kHz
Max.
600 75 45 150 150 40 15 60 20 390 156 -55 to +150
Units
V
Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
V W
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight
Min.
Typ.
0.24 6.0 (0.21)
Max.
0.32 1.7 40
Units
C/W
g (oz)
www.irf.com
12/15/03
IRGP50B60PD1
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600
Typ.
0.31 1.7 2.00 2.45 2.60 3.20 4.0 -10 41 5.0 1.0 1.30 1.20
Max. Units
2.35 2.85 2.95 3.60 5.0 500 1.70 1.60 100 nA V V V
Conditions
VGE = 0V, IC = 500A 1MHz, Open Collector IC = 33A, VGE = 15V IC = 50A, VGE = 15V IC = 33A, VGE = 15V, TJ = 125C IC = 50A, VGE = 15V, TJ = 125C IC = 250A
Ref.Fig
RG VCE(on)
VGE(th)
VGE(th)/TJ
Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
3.0
7,8,9
mV/C VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 33A, PW = 80s A mA V VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125C IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 125C VGE = 20V, VCE = 0V
10
Min.
Typ.
205 70 30 255 375 630 30 10 130 11 580 480 1060 26 13 146 15 3648 322 56 215 163
Max. Units
308 105 45 305 445 750 40 15 150 15 700 550 1250 35 20 165 20 pF VGE = 0V VCC = 30V ns J ns J nC IC = 33A VCC = 400V VGE = 15V
Conditions
Ref.Fig 17 CT1
CT3
CT3
f f
IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125C IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125C
16
Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current
15
3 CT2
VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s IF = 15A, VR = 200V, di/dt = 200A/s
19
21
19,20,21,22
CT5
Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
www.irf.com
IRGP50B60PD1
90 80 70 60
IC (A)
450 400 350 300
Ptot (W)
100
140
ICE (A)
120 100 80 60 40 20
IC A)
10
1 10 100 1000
0 0 1 2 3 4 5 6 7 8 9 10
VCE (V)
VCE (V)
120 100 80 60 40 20 0 0
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
120 100 80 60 40 20 0 0
VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
10
10
VCE (V)
VCE (V)
www.irf.com
IRGP50B60PD1
900 800 700 600 500 400 300 200 100 0 0 5 10 VGE (V) 15 20 TJ = 125C T J = 25C
VCE (V) ICE (A)
10 T J = 25C T J = 125C 9 8 7 6 5 4 3 2 1 0 5 10 VGE (V) 15 20 ICE = 15A ICE = 33A ICE = 50A
6 5 4 3 2 1 0 5 10 VGE (V)
10
1 0.8
1.2
1.6
2.0
2.4
15
20
td OFF
100
tF tdON tR
10 0 10 20 30 40 50 60
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3)
www.irf.com
IRGP50B60PD1
1000 900 800
1000
Energy (J)
EON
700 600 500 400 300 0 5 10 15 20 25
tdOFF
100
EOFF
td ON tF tR
10 0 5 10 15 20 25
RG ( )
RG ( )
Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
40
Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
30
Capacitance (pF)
1000
Eoes (J)
Coes
20
100
10
Cres
10 0 20 40 60 80 100
VCE (V)
12 10
VGE (V)
400V
1.2
1.0
Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 33A, VGE= 15V
www.irf.com
IRGP50B60PD1
100
100
I F = 30A
I F = 30A
60
I IRRM - (A)
t rr - (ns)
10
IF = 15A
I F = 15A
40
I F = 5.0A
I F = 5.0A
20 100
di f /dt - (A/s)
1000
1 100
1000
di f /dt - (A/s)
800
1000
IF = 30A
di(rec)M/dt - (A/s)
Q RR - (nC)
400
I F = 15A IF = 5.0A
200
0 100
di f /dt - (A/s)
1000
100 100
di f /dt - (A/s)
1000
www.irf.com
IRGP50B60PD1
1
D = 0.50
0.1
0.01
0.001
0.1
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
0.01
0.1
www.irf.com
IRGP50B60PD1
L
L DUT
0
VCC
80 V Rg
DUT
480V
1K
PFC diode
R=
VCC ICM
DUT / DRIVER
Rg
VCC
Rg
DUT
VCC
dif/dt ADJUST
www.irf.com
IRGP50B60PD1
600 550 500 450 400 350 VCE (V) 300 250 200 150 100 50 0 -50 -100 -0.20 0.00
Eof f 5% ICE 5% V CE tf 90% ICE
60 50
90 80 70 60
TEST CURRENT
40 30 20 10 0
tr
50 40 30
5% V CE
20 10 0
Eon Loss
50 0
-10 0.40
0.20
-50 -0.10
0.00
0.10
-10 0.20
Time (s)
Time(s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3
IF 0
trr ta tb
4
Q rr
2
I RRM
di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M /dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 IRRM extrapolated to zero current
www.irf.com
ICE (A)
IRGP50B60PD1
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M
-A5.50 (.217)
-D-
NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOWN MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-247AC.
2X
3
-C-
* 14.20 (.559)
2.40 (.094) 2.00 (.079) 2X 5.45 (.215)
14.80 (.583)
C AS
2X
PART NUMBER
IRFPE30
3A1Q
9302
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMB LY LINE "H" PART NUMBER
IRFPE30
56 035H 57
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/03
10
www.irf.com
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.