Semicon Taiwan 2011

Surface Treatment and Release

memsstar
Supplies vapour phase processing equipment to the global MEMS industry Focussed on integration of release scheme into MEMS process flow
consult on material choices and alternative deposition processes

Only company dedicated to all release etch schemes with proprietary technology and equipment
XeF2 Vapour HF Organic Release

Integration of anti-stiction Coatings with release etch

Surface Treatment and Release

memsstar Offers:
Unique patented processing solutions for vapour phase isotropic etch and surface modification Wide range of MEMS deposition and etching products including single-wafer fabrication equipment Comprehensive portfolio of etch and surface modification process recipes for MEMS manufacturing using semiconductor equipment to maximize ROI and extend the usability of existing systems Strong semiconductor and MEMS process expertise that eases the path to integrating next-generation release schemes into productive and reliable process flows MEMS etch and coating processes that eliminate the problems associated with alternative approaches, including incompatible and poorly controlled wet chemistries, poor control and monitoring of stagnant gas systems, and multiplicity of unit process steps
Surface Treatment and Release

memsstar Sacrificial Etch Processing

Key technology benefits focus on performance Single wafer processing Excellent within wafer uniformity Excellent wafer to wafer uniformity Stiction free processing High yield Industry leading etch rates Large process window Optimisation of process for any given structure Industry leading selectivities to most common materials in MEMS Integrated process with anti stiction coating CMOS compatible processes Compatible with wide range of materials including metals
Surface Treatment and Release

Continuous Vapour Flow Processing

Replaces pulse technique higher etch rates higher selectivities excellent within wafer uniformity excellent wafer to wafer repeatability precise process control Allows use of process monitoring and endpoint techniques Greater productivity

Surface Treatment and Release

Etch Process Modules - SVR-vHF

Sacrificial Vapour Release
Oxides Undoped, Thermal, PECVD, LPCVD

Etch Chemistry - aHF

Alcohol free process Single wafer, vapour phase processing Excellent within wafer uniformity < 5% Excellent repeatability <5% wafer to wafer Industry leading etch rates High selectivity to underlayer and mechanical materials especially nitride Large process window to optimise process for any structure No corrosion No stiction In Line Controls endpoint
Surface Treatment and Release

vHF Process Performance

Etch Rate /min
5000 4000 3000 2000 1000 0

25 wafer run 200mm Blanket thermal oxide wafers

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

Uniformity %
10

8
6 4 2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 U%

Surface Treatment and Release

Etch Process Modules - SVR-Xe

Sacrificial Vapour Release
Silicon Poly, Amorphous, Single Crystal Transition Metals - Molybdenum, Tantalum, Tungsten

Etch Chemistry - XeF2

Single wafer, vapour phase processing Excellent within wafer uniformity < 5% Excellent repeatability <5% wafer to wafer Industry leading etch rates High selectivity to nitride and oxide Large process window to optimise process for any structure No stiction In Line Controls etch rate monitor, endpoint, temperature, optical

Surface Treatment and Release

XeF2 Process Performance

etch rate

Process Repeatability Release etching with memsstar Wafer to wafer repeatability <2%

1.00 0.80 0.60 0.40 0.20 0.00 1 2 3 4 5 wafer 10 15 20 25

etch rate

Single Crystal Etch Rate

1.40
E/R (um/min)

1.20 1.00 0.80 0.60 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 over 3 months

CCFT is very reproducible 3 months data, 40% open area into single crystal

Surface Treatment and Release

Process Controls - Endpoint

Multiple endpointing techniques available dependent on structure and etch
29.50 29.00 28.50 28.00 cantilever membrane micromirror

HF Etch
0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 -0.10 0

27.00 26.50 26.00 25.50 25.00 0 50 100 150 200

Signal

27.50

20

40

60

80 Time(s)

100

120

140

160

Thermal Endpoint for XeF2 etch of differing structures

Spectroscopic Endpoint for vHF etch

minimise overetch monitor process efficiency improve productivity

Surface Treatment and Release

Screen Capture

Surface Treatment and Release

Ideal for
Endpoint detection. Production process control, SPC. Multi process steps with different materials. Enhance development, better understanding of process mechanisms. Reducing development costs, number of experimental runs.

Surface Treatment and Release

Coating Process Modules - SPD

Surface Preparation and Deposition - Coatings
Precursor chemistry process with CCFT - fast process times Ultra thin and conformal, robust and cost effective Integrated plasma chemistries

Standard Coatings Available

SPD Hydrophobic non stick, fluid transport SPD Hydrophilic wetting layers SPD Bio Compatible in vivo applications SPD Bio Active receptor applications

Surface Treatment and Release

Examples

Released Micro Bolometer XeF2 etch

Released Motion Sensor vHF etch Surface Treatment and Release

Surface Treatment and Release

Why memsstar?
- memsstar is the only company specialized in release processing and integration for MEMS manufacturing - Technology-focused company
7 patent applications on release processing and process monitoring 1 patent granted on process monitoring 2 patents granted of process method

Next-generation technology - Wealth of processing experience in etch and deposition

Over 100 man years experience in processing alone Over 400 man years with companies such as AMAT/Lam/Novellus

Wealth of experience on hardware and service

-

100% sign off record to date

Surface Treatment and Release

Summary
Replace wet chemical processing Higher Yield Zero Stiction Higher Yield Precise process control Unrivalled repeatability Precise process control Process Monitoring Techniques Reduce WIP Higher Yield Reduce Capex Higher Utilisation New technology Lower COO

Single wafer processing

Continuous Flow Processing

Integrate processes on single cluster

Integrate processes into CMOS fab

Develop new controls

Surface Treatment and Release

Thanks for your time

Any questions?

Surface Treatment and Release

Deep Silicon Etch System and Technology

VERSALINE Modular systems with leading technology and configuration flexibility

Plasma-Therm
Enabling Sustainable Success
Manufacturer of semiconductor processing equipment serving global specialty markets Company focus
High performance wafer fabrication systems Technology leadership in specialty semiconductor markets Customer recognized award winning service for 12 consecutive years

Plasma-Therm Etch Solutions

Adv . Photomask & Imprint

Data Storage

R&D

Solar

Power

Wireless

Photonics

SSL

MEMS

Platforms

Materials

DSE Application Examples

A few MEMS examples:
Microfludic channels Bio & chemical reaction chambers Interconnect vias Interdigital resonators Power device isolation trenches Micro capacitors .

Wide Range of Market Requirements

Wafer sizes 4, 6 and 8 High Throughput Etch
ICP higher etching rate

Materials
Si / SOI

Profiles
Sloped Vertical High aspect ratio

Substrate Temp. Control

ESC Mechanical Carriers for fragile substrates

High productivity
Low maintenance Temp. control source Each product uses a specific process development intensive Success when we work closely with customers
5

ARDE Loading (high/low) Depth

Shallow 1 -2m Deep >500m

Key VERSALINE Features for Successful Production

PTI Experience Driven DSE Features
Pressure Control (patented) Solid State RF Tuning Fast Gas Switching (patented) SOI Interface Control (patented) Sensitive Endpoint Detection (patented)

DSE Process Requirements

Fragile Substrate ESC/Carrier Technology Temperature Stabilized ICP

DSE Etch/Deposition Cycling

Process control with three steps
Metrics Etching rate Sidewall smoothness Mask undercut SOI Notch ARDE Selectivity

Passivation (C4F8)

Selective passivation removal

Isotropic etching of Si (SF6)

Scallop Depth

Scallop Length

Time Division Multiplexing (TDM) process (also known as Bosch process)

7

DSE Profile Control with Morphing

Smooth and automatic parameter changes during processing Users selectable morphing curves Enhanced capability for special applications
Parameter
For example
Parameter Electrode Bias Dep time (sec) Start 400 2.0 End 500 1.5 Curve 0.2 0.5 0.2

0.5

Process Time
2 Profile Driven To Vertical

Without Morphing

With Morphing

5
Time 8

DSE Smooth Sidewalls with Fast Switching Control

Exhaust C4F8 SF6 Exhaust

MFC

MFC

Fast Gas Delivery Close coupled Rapid Response

Process Module Solid State Matching Smart Pressure Control

<10 nm roughness at 6.4m/min

High etch rate with low roughness with sub-second switching

9

SOI Technology with Patented Plasma-Therm Process Notch Control

Typical Deep Silicon Etching Plasma-Therm DSE SOI Solution

SOI structure with typical notching and undercut problems

Notchless

10

DSE Sensitive Endpoint Detection for SOI Applications

Monitor Plasma Emission

Raw Endpoint Signal

Applying Signal Processing

No Undercut at Si/SiO2 Interfaces

<1% open oxide on 150mm wafer

Profiles - Smooth and Vertical

Optimization for Sidewall Smoothness Very High Aspect Ratio Trench

Feature Width: ~3 um Etched Depth: ~182 um Etching Rate : 3.5 um/min Aspect Ratio: ~60 Sidewall Smoothness: <50 nm 150 mm wafer, 3.5% uniformity
12

Feature Width: ~0.8 um Etched Depth: ~32 um Etching Rate : ~2 um/min Aspect Ratio: ~40 Sidewall Smoothness: <50 nm 150 mm wafer, 3.5% uniformity

DSE Process Requirements Met with Plasma-Therm Technology

Feature profile control Critical dimension adjustment Smooth sidewalls with fast process control technology Superior SOI notch performance Wide process latitude High selectivity High productivity low maintenance, high throughput Stable process performance temperature controlled environment Sensitive endpoint technology
13

DSE Development Benchmark ~20% Open Area

35.0 30.0 Etch Rate (m/min) 25.0 20.0 15.0 10.0 5.0 0.0 0
2010 2009

PTI - Current Performance

10
2011

20 30 Aspect Ratio

40

50

14

Versaline Configuration Flexibility From R&D to Large Volume Production

VCx-600H Thru wall

VCx-400 Thru wall

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Thank you