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Bulletin I27125

rev. A 04/99

P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved

25A

Description
The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers.

Major Ratings and Characteristics


Parameters
ID @ TC IFSM @ 50Hz @ 60Hz It
2

P100
25 85 357 375 637 580 6365 400 to 1200 2500 - 40 to 125

Units
A C A A A 2s A 2s A2s V V C

@ 50Hz @ 60Hz

I2t VRRM VINS TJ

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P100 Series
Bulletin I27125 rev. A 04/99

ELECTRICAL SPECIFICATIONS Voltage Ratings


Type number VRRM maximum repetitive VRSM maximum nonVDRM maximum peak reverse voltage repetitive peak reverse repetitive peak off-state voltage voltage V V V
400 600 800 1000 1200 500 700 900 1100 1300 400 600 800 1000 1200

IRRM max.
@ TJ max.

mA
10

P101, P121, P131 P102, P122, P132 P103, P123, P133 P104, P124, P134 P105, P125, P135

On-state Conduction
Parameter
ID I TSM I FSM Maximum DC output current Max. peak one-cycle non-repetitive on-state or forward current

P100
25 357 375 300 315

Units Conditions
A @ TC = 85C, full bridge t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms A s
2

No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.

I t

Maximum I t for fusing

637 580 450 410

t = 8.3ms t = 10ms t = 8.3ms

I2t

Maximum I2 t for fusing

6365

A2s

t = 0.1 to 10ms, no voltage reapplied I 2t for time tx = I 2t . tx

V T(TO) Max. value of threshold voltage r t1 Max. level value of on-state slope resistance V TM V FM di/dt Max. peak on-state or forward voltage drop Maximum non repetitive rate of rise of turned on current IH IL Maximum holding current Maximum latching current

0.82 12

V m

TJ = 125C TJ = 125C, Av. power = VT(TO) * IT(AV) + rt + (IT(RMS)) 2

1.35

TJ = 25C, ITM = x I T(AV) TJ = 125C from 0.67 VDRM ITM = x IT(AV), I g = 500mA, tr < 0.5s, tp > 6s TJ = 25C anode supply = 6V, resistive load, gate open TJ = 25C anode supply = 6V, resistive load

200 130 250

A/s mA mA

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P100 Series
Bulletin I27125 rev. A 04/99

Blocking
Parameter
dv/dt Maximum critical rate of rise of 200 off-state voltage IRRM IDRM IRRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM Max peak reverse leakage current 10 100 mA A TJ = 125C, gate open circuit TJ = 25C 50Hz, circuit to base, all terminal shorted, RMS isolation voltage 2500 V TJ = 25C, t = 1s V/s TJ = 125C, exponential to 0.67 VDRM gate open

P100

Units Conditions

Triggering
Parameter
PGM IGM - VGM Maximum peak gate power

P100
8 2 2 10 3 2 1

Units Conditions
W A

PG(AV) Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage VGT Maximum gate voltage required to trigger

T J = - 40C T J = 25C T J = 125C T J = - 40C Anode Supply = 6V resistive load

IGD

Maximum gate current required to trigger

90 60 35 mA

T J = 25C T J = 125C

Anode Supply = 6V resistive load

VGD

Maximum gate voltage that will not trigger 0.2 V TJ = 125C, rated VDRM applied

IGD

Maximum gate current that will not trigger 2 mA TJ = 125C, rated VDRM applied

Thermal and Mechanical Specification


Parameter
TJ T
stg

P100
-40 to 125

Units
C

Conditions

Max. operating temperature range Max. storage temperature range

-40 to 125 2.24 K/W DC operation per junction

RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, base to heatsink

0.10

K/W

Mounting surface, smooth and greased


A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound

Nm

wt

Approximate weight

58 (2.0)

g (oz)

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P100 Series
Bulletin I27125 rev. A 04/99

Circuit Type and Coding *


Circuit "0"
Terminal Positions

Circuit "2"

Circuit "3"

G1

G1

G2

G3 AC1 AC2

G1

Schematic diagram diagram

AC1 AC2

AC2
AC1
G2

G4

G2

(-)

(+)

(-)

(+)

(-)

(+)

Single Phase Hybrid Bridge CommonCathode Basic series With voltage suppression With free-wheeling diode With both voltage suppression and free-wheeling diode P10. P10.K P10.W

Single Phase Hybrid Bridge Doubler P12. P12.K -

Single Phase All SCR Bridge P13. P13.K -

P10.KW

* To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W

Outline Table
4.6 (0.18)

12.7 (0.50) 12.7 (0.50)

1.65 (0.06)

4.6 (0.18)

2.5 (0.10) MAX .

15.5 (0.61)

63.5 (2.50) Faston 6.35x0.8 (0.25x 0.03)


5.2 (0.20)

45 (1.77)

33.8 (1.33) 48.7 (1.91)

All dimensions in millimeters (inches)

32.5 (1.28) MAX.

23.2 (0.91)

25 (0.98) MAX.

MAX.

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P100 Series
Bulletin I27125 rev. A 04/99
60 Maximum Total Power Loss (W)
R

50
2

K/ W

SA th

= 5 1. K/

40
3K /W

W ta el -D

30 20 10 0
0 5

180 (Sine)

5 K/ W

7 K/ W

P100 Series T = 125C J


10 15 20

1 0 K/ W

25 0

25

50

75

100

125

Total Output Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)


Maximum Average On-state Power Loss (W) 15 180 120 90 60 30 RMS Limit
Conduction angle

Maximum Average On-state Power Loss (W)

20 DC 180 120 90 60 30 RMS Limit


Conduct ion Period

15

10

10

P100 Series T J = 125C Per Junction


0

P100 Series T J = 125C Per Junction

0 0 5 10 15 20 Average On-state Current (A)

10

15

Average On-state Current (A)

Fig. 2 - On-state Power Loss Characteristics


Maximum Allowable Case Temperature (C) 130 Fully Turned.on 120 110 100 90 P100 Series Per Module 180 (Sine) 180 (Rect)

Fig. 3 - On-state Power Loss Characteristics


1000 Instantaneous On-state Current (A) T J = 25 C T J = 125 C

100

10 P100 Series Per Junction 1 0 1 2 3 4 5 6

80 70 0

10

15

20

25

30

Total Output Current (A)

Instantaneous On-state Voltage (V)

Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-state Voltage Drop Characteristics

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P100 Series
Bulletin I27125 rev. A 04/99
Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sine Wave On-state Current (A)

350

400 350 300 250 200 150 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125C No Voltage Reapplied Rated V RRM Reapplied

300

250

200

P100 Series Per Junction


150 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)

P100 Series Per Junction 0.1 Pulse Train Duration (s) 1

100 0.01

Fig. 6 - Maximum Non-Repetitive Surge Current


(K/W) 10 Steady State Value: RthJC = 2.24K/W (DC Operation) 1

Fig. 7 - Maximum Non-Repetitive Surge Current

Transient Thermal Impedance Z

thJC

0.1

P100 Series Per Junction

0.01 0.0001

0.001

0.01

0.1

10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics


100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt : 10V, 20 ohms, tr <= 1s b)Recommended load line for rated di/dt : 10 V, 65 ohms, tr <= 1s (a)

(1) PGM (2) PGM (3) PGM (4) PGM

= 100 W, tp = 500 s = 50 W, tp = 1 ms = 20 W, tp = 25 ms = 10 W, tp = 5 ms

10 (b)

TJ = -40 C

TJ = 25 C

TJ = 125 C

(4)

(3)

(2)

(1)

VGD IGD
0.1 0.001 0.01

P100 Series 0.1 1

Frequency Limited By PG(AV) 10 100

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

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P100 Series
Bulletin I27125 rev. A 04/99

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Data and specifications subject to change without notice.

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