CHARACTERISTICS OF PHOTO-DIODE AND PHOTOTRANSISTOR

AIM: 1. To study the characteristics of a photo-diode. 2. To study the characteristics of phototransistor.

APPARATUS REQUIRED:

S.No 1 2 3 4 5 6 7

Name R.P.S Ammeter Voltmeter Photo diode Resistor Bread Board Photo transistor

Range (0-30)V (030)mA (030)V

Quantity 1 1 1 1

1K;

2 1 1

THEORY: PHOTODIODE: A photo diode is a two terminal pn junction device, which operates on reverse bias. On reverse biasing a pn junction diode, there results a constant current due to minority charge carriers known as reverse saturation current. Increasing the thermally generated minority carriers by applying external energy, i.e., either heat or light energy at the junction can increase this current. When we apply light energy as an external source, it results in a photo diode that is usually placed in a glass package so that light can reach the junction. Initially when no light is incident, the current is only the reverse

saturation current that flows through the reverse biased diode. This current is termed as the dark current of the photo diode. Now when light is incident on the photo diode then the thermally generated carriers increase resulting in an increased reverse current which is proportional to the intensity of incident light. A photo diode can turn on and off at a faster rate and so it is used as a fast acting switch. CIRCUIT DIAGRAM: (0-30)mA
1K;

a (0-30)V

(0-30)V

TABULAR COLUMN: S.No. VOLTAGE (In Volts) CURRENT (In mA)

MODEL GRAPH:

R (K;)

Illumination lm/m2

THEORY: PHOTOTRANSISTOR: It is a transistor with an open base; there exists a small collector current consisting of thermally produced minority carriers and surface leakage. By exposing the collector junction to light, a manufacturer can produce a phototransistor, a transistor that has more sensitivity to light than a photo diode. Because the base lead is open, all the reverse current is forced into the base of the transistor. The resulting collector current is ICeo = FdcIr. The main difference between a phototransistor and a photodiode is the current gain, Fdc. The same amount of light striking both devices produces Fdc times more current in a phototransistor than in a photodiode.

CIRCUIT DIAGRAM:

N
1K;

(0-30V)

TABULAR COLUMN:

SYMBOL:

S. No.

VCE (in Volts)

IC (in mA)

MODEL GRAPH: IC (mA) 400 Lux 200 Lux 0 Lux VCE(V) PROCEDURE: PHOTO DIODE: 1. Rig up the circuit as per the circuit diagram. 2. Maintain a known distance (say 5 cm) between the DC bulb and the photo diode. 3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode insteps of 1V and note down the corresponding diode current, Ir. 4. Repeat the above procedure for the various voltages of DC bulb. 5. Plot the graph: VD vs. Ir for a constant DC bulb voltage. PHOTOTRANSISTOR: 1. Rig up the circuit as per the circuit diagram. 2. Maintain a known distance (say 5 cm) between the DC bulb and the phototransistor. 3. Set the voltage of the bulb (say, 2V), vary the voltage of the diode in steps of 1V and note down the corresponding diode current, Ir. 4. Repeat the above procedure for the various values of DC bulb. 5. Plot the graph: VD vs. Ir for a constant bulb voltage.

RESULT: Thus the characteristics of photo diode and phototransistor are studied.