2SK3767

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3767
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 2 5 25 93 2 4 150 -55~150 Unit V V V A W mJ A mJ C C
1: Gate 2: Drain 3: Source

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

SC-67 2-10U1B

Weight : 1.7 g (typ.)

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 5.0 62.5 Unit C/W C/W
2

Note 1:

Ensure that the channel temperature does not exceed 150.

1

Note 2: VDD = 90 V, Tch = 25Cinitial, L = 41mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

2004-12-10

2SK3767
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min Typ. Max Unit

30
600 2.0

3.3 1.6 320 30 100 15 55 20 80 9 5 4

10
100

A
V

A
V V

4.0 4.5

0.8

Yfs
Ciss Crss Coss tr ton tf toff Qg Qgs Qgd

VDS = 10 V, VGS = 0 V, f = 1 MHz

pF

10 V VGS 0V ID = 1A

ns

Output RL = 200

Switching time

50

nC

Duty < 1%, tw = 10 s =

VDD 200 V

VDD 400 V, VGS = 10 V, ID = 2A

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 2 5 Unit A A V ns

IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/s

1000 3.5

1.7

Marking

K3767

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

2004-12-10

2SK3767

ID VDS
2 5.5 1.6 10 6 5.25 4 Common source Tc = 25C Pulse test

ID VDS
10 6

Drain current ID (A)

(A)

1.2

ID

5.5

Drain current

2 5.25 5 1 4.75 4.5 VGS = 4V 0 0 4 8 12 16 20 24

0.8

4.75

0.4 VGS = 4V 0 0 4 8 12 16

4.5 Common source Tc = 25C Pulse test 20 24

Drain-source voltage

VDS

(V)

Drain-source voltage

VDS

(V)

ID VGS
5 20

VDS VGS
Common source

(V)

Common source 4 VDS = 20 V Pulse test 3

Tc = 25 16 Pulse test

Drain current voltage VDS

Drain current ID (A)

12

2 55 Tc=100 1 25 0 0

ID = 2A

0.5

10

0 0

12

16

20

Gate-source voltage

VGS

(V)

Gatesource voltage VGS

(V)

Yfs ID
10 100

RDS (ON) ID
Common source Tc = 25C Pulse test

Forward transfer admittanceYfs (S)

Tc = 55C 1 100 25

Drain source ON resistance RDS (ON) ()

10

0.1 Common source VDS = 20 V Pulse test 0.1 1 10

VGS=10V

0.01 0.01

1 0.01

0.1

10

Drain current

ID

(A)

Drain current ID

(A)

2004-12-10

2SK3767

RDS (ON) Tc
10 Common source 10 Common source

IDR VDS

(A)

Drain-source ON resistance RDS (ON) ()

Drain reverse current IDR

VGS =10V pulse test

Tc = 25C Pulse test 1

ID=2A

4 0.5 2

0.1

10 3 1 VGS = 0, 1 V

0 -100

-50

50

100

150

200

0.01 0

0.4

0.8

1.2

1.6

Case temperature

(C)

Drain-source voltage

(V)

Capacitance VDS
1000 Ciss 6

Vth Tc
Common source

(V)

VDS = 10 V ID = 1 mA Pulse test

(pF)

Gate threshold voltage Vth

100

Capacitance C

Coss

10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100 Crss

0 80

40

40

80

120

150

Drian-source voltage

VDS

(V)

Case temperature

Tc

(C)

PD Tc
50 800

Dynamic Input / output characteristics

16

(W)

Drain-source voltage VDS (V)

Drain power dissipation PD

40

200V 600 100V 400 VDD = 400V 8 12

20

Common source 200 ID = 7.5 A Tc = 25C Pulse test 0 0 2 4 6 8 10 0 12 4

10

0 0 40 80 120 160

Case temperature

Tc

(C)

Total gate charge

Qg

(nC)

2004-12-10

Gate-source voltage

30

VGS (V)

2SK3767

rth tw

Normalized transient thermal impedance rth (t)/Rth (ch-c)

10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 10 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 T Duty = t/T Rth (ch-c) = 5/W 100 1 10 100 1 10 PDM t Duty=0.5

Pulse width

tw

(s)

Safe operating area

100

200

EAS Tch

(mJ)
10 ID max (PULSED) * 100 s * ID max (CONTINUOUS) *

160

EAS Avalanche energy

Drain current ID (A)

120

80

DC OPERATION Tc = 25C

1 ms *

40

0 0.1
Single nonrepetitive pulse Tc=25 Curves must be derated linearly with increase in temperature.

25

50

75

100

125

150

Channel temperature (initial)

VDSS max 100 1000

Tch

(C)

0.01 1 10

15 V

BVDSS IAR VDD VDS

Darin-source voltage VDS

(V)

15 V

TEST CIRCUIT RG = 25 VDD = 90 V, L = 41mH

WAVE FORM

AS =

1 B VDSS L I2 B 2 VDD VDSS

2004-12-10

2SK3767

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

030619EAA

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

2004-12-10