BSS 84 P SIPMOS Small-Signal-Transistor

Feature

Product Summary VDS RDS(on) ID

3

P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated

-60 8 -0.17
PG-SOT-23

W
A

VPS05161

Type
BSS84P - E6327
BSS84P - L6327

Package
PG-SOT-23

Ordering Code
Q67041-S1417 SP000082879

Marking
YBs
Gate pin1

Drain pin 3

PG-SOT-23

YBs

Source pin 2

Maximum Ratings, at TA = 25 C, unless otherwise specified Parameter

Continuous drain current
TA=25C TA=70C

Symbol
ID

Value
-0.17 -0.14

Unit
A

Pulsed drain current

TA=25C

I D puls
EAS
EAR
dv/dt
VGS
Ptot
T j , Tstg

-0.68
2.6
0.036
-6
20
0.36
-55... +150
55/150/56

Avalanche energy, single pulse

ID=-0.17 A , VDD=-25V, RGS=25W

mJ

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt
IS=-0.17A, VDS=-48V, di/dt=-200A/s, Tjmax=150C

kV/s
V
W
C

Gate source voltage

Power dissipation
TA=25C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Rev 2.3

Page 1

2005-07-21

BSS 84 P
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)

Symbol min. RthJS RthJA -

Values typ. max. 200

Unit

K/W

350 300

Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID =-250A

Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) -60 -1

Values typ. -1.5 max. -2

Unit

Gate threshold voltage, VGS = VDS

ID=-20A

Zero gate voltage drain current

VDS=-60V, VGS=0, TA =25C VDS=-60V, VGS=0, TA =125C

A -0.1 -10 -10 8 5.8 -1 -100 -100 12 8 nA

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-4.5V, ID=-0.14A

Drain-source on-state resistance

VGS=-10V, ID=-0.17A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.3 Page 2

2005-07-21

BSS 84 P
Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25W VDS2*ID*RDS(on)max , ID=-0.14A VGS=0, VDS=-25V, f=1MHz

Symbol

Conditions min. 0.065 -

Values typ. 0.13 15 6 2 6.7 16.2 8.6 20.5 max. 19 8 3 10 24.3 12.9 30.8

Unit

S pF

ns

Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS=0, IF=-0.17A VR=-30V, IF=lS, diF/dt=100A/s

Qgs Qgd Qg

VDD=-48V, ID=-0.17A

0.25 0.3 1 -3.42

0.37 0.45 1.5 -

nC

VDD=-48V, ID=-0.17A, VGS=0 to -10V

V(plateau) VDD=-48V, ID=-0.17A

IS

TA=25C

-0.93 23 10

-0.17 A -0.68 -1.24 V 34 15 ns nC

Rev 2.3

Page 3

2005-07-21

BSS 84 P
1 Power dissipation Ptot = f (TA)
0.38
BSS 84 P

2 Drain current ID = f (TA) parameter: VGS 10 V

BSS 84 P

-0.18

W A
0.32 -0.14 0.28

P tot

ID
-0.1 -0.08 -0.06 -0.04 -0.02 0 0 20 40 60 80 100 120

0.24 0.2 0.16 0.12 0.08 0.04 0 0

-0.12

160

20

40

60

80

100

120

160

TA

TA

3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C

-10
1 BSS 84 P

4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T

10 3
BSS 84 P

K/W

-10

tp = 170.0s

10 2

/I D

-10

-1

= RD
o S( n)

VD

1 ms

Z thJA
10 1 D = 0.50
10 ms

ID

0.20 0.10 -10 -2 DC 10 0 0.05 single pulse 0.02 0.01

-10 -3 -1 -10

-10

-10

-10

10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10

10

VDS
Rev 2.3 Page 4

tp

2005-07-21

BSS 84 P
5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C
-0.4
BSS 84 P Ptot = 0.36W

6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS ; Tj = 25 C

26
BSS 84 P

j i

W
h
VGS [V] g a -2.5

22 20

-0.32
f

b c

-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0

-0.28

R DS(on)

d e

18 16 14 12 10 8 6 4 V GS [V] =
h i j k l

ID

-0.24 -0.2 -0.16 -0.12 -0.08 -0.04 0 0

b c

d g
h i j k l

2 -4

a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0

g h i j -5.5 -6.0 -6.5 -7.0

k l -8.0 -10.0

-0.5

-1

-1.5 -2

-2.5

-3

-3.5

-5

0 0

-0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.38

VDS

ID

7 Typ. transfer characteristics parameter: Tj = 25 C

0.4
A

ID = f ( VGS ); |VDS | 2 x |ID | x RDS(on)max

8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C

0.16
S

0.3

0.12

- ID

0.25

g fs
V

0.1

0.2

0.08

0.15

0.06

0.1

0.04

0.05

0.02

0 0

0 0

0.04

0.08

0.12

0.16

0.22

- VGS

-ID

Rev 2.3

Page 5

2005-07-21

BSS 84 P
9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.17 A, VGS = -10 V 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS
2.4
V 98%

W
R DS(on)

21

BSS 84 P

18 2

- V GS(th)

16 14 12 10 8 6 4 2 0 -60 typ

1.8 1.6 1.4

typ.

98% 1.2 1 0.8 0.6 0.4 -60

2%

-20

20

60

100

180

-20

20

60

100

160

TA

TA

11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz

10
2

12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s

-10 0
BSS 84 P

A
pF Ciss C

-10 -1

Coss

10

IF
-10 -2
Crss

Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)

10

10

20

-10 -3 0

-0.4

-0.8

-1.2

-1.6

-2

-2.4 V

-3

- VDS

VSD
Page 6

Rev 2.3

2005-07-21

BSS 84 P
13 Typ. avalanche energy EAS = f (TA), parameter:
3

14 Typ. gate charge VGS = f (QGate ) parameter: ID = -0.17 A pulsed; Tj = 25 C

-16
BSS 84 P

ID = -0.17 A , VDD = -25 V, RGS = 25 W

mJ
-12

E AS

V GS

-10

0,2 VDS max

0,8 VDS max

1.5

-8

-6 1 -4 0.5 -2

0 25

45

65

85

105

125

C
TA

165

0 0

0.2

0.4

0.6

0.8

1.2 nC

1.5

QGate

15 Drain-source breakdown voltage V(BR)DSS = f (TA)

BSS 84 P

-72

V (BR)DSS

-68 -66 -64 -62 -60 -58 -56 -54 -60

-20

20

60

100

C TA

180

Rev 2.3

Page 7

2005-07-21

BSS 84 P
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev 2.3

Page 8

2005-07-21