Feature
-60 8 -0.17
PG-SOT-23
W
A
VPS05161
Type
BSS84P - E6327
BSS84P - L6327
Package
PG-SOT-23
Ordering Code
Q67041-S1417 SP000082879
Marking
YBs
Gate pin1
Drain pin 3
PG-SOT-23
YBs
Source pin 2
Symbol
ID
Value
-0.17 -0.14
Unit
A
I D puls
EAS
EAR
dv/dt
VGS
Ptot
T j , Tstg
-0.68
2.6
0.036
-6
20
0.36
-55... +150
55/150/56
mJ
kV/s
V
W
C
Rev 2.3
Page 1
2005-07-21
BSS 84 P
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Unit
K/W
350 300
Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID =-250A
Unit
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.3 Page 2
2005-07-21
BSS 84 P
Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25W VDS2*ID*RDS(on)max , ID=-0.14A VGS=0, VDS=-25V, f=1MHz
Symbol
Values typ. 0.13 15 6 2 6.7 16.2 8.6 20.5 max. 19 8 3 10 24.3 12.9 30.8
Unit
S pF
ns
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS=0, IF=-0.17A VR=-30V, IF=lS, diF/dt=100A/s
Qgs Qgd Qg
VDD=-48V, ID=-0.17A
nC
IS
TA=25C
-0.93 23 10
Rev 2.3
Page 3
2005-07-21
BSS 84 P
1 Power dissipation Ptot = f (TA)
0.38
BSS 84 P
-0.18
W A
0.32 -0.14 0.28
P tot
ID
-0.1 -0.08 -0.06 -0.04 -0.02 0 0 20 40 60 80 100 120
-0.12
160
20
40
60
80
100
120
160
TA
TA
K/W
-10
tp = 170.0s
10 2
/I D
-10
-1
= RD
o S( n)
VD
1 ms
Z thJA
10 1 D = 0.50
10 ms
ID
-10 -3 -1 -10
-10
-10
-10
10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
10
VDS
Rev 2.3 Page 4
tp
2005-07-21
BSS 84 P
5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C
-0.4
BSS 84 P Ptot = 0.36W
j i
W
h
VGS [V] g a -2.5
22 20
-0.32
f
b c
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0
-0.28
R DS(on)
d e
18 16 14 12 10 8 6 4 V GS [V] =
h i j k l
ID
d g
h i j k l
2 -4
k l -8.0 -10.0
-0.5
-1
-1.5 -2
-2.5
-3
-3.5
-5
0 0
VDS
ID
0.3
0.12
- ID
0.25
g fs
V
0.1
0.2
0.08
0.15
0.06
0.1
0.04
0.05
0.02
0 0
0 0
0.04
0.08
0.12
0.16
0.22
- VGS
-ID
Rev 2.3
Page 5
2005-07-21
BSS 84 P
9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.17 A, VGS = -10 V 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS
2.4
V 98%
W
R DS(on)
21
BSS 84 P
18 2
- V GS(th)
16 14 12 10 8 6 4 2 0 -60 typ
typ.
-20
20
60
100
180
-20
20
60
100
160
TA
TA
A
pF Ciss C
-10 -1
Coss
10
IF
-10 -2
Crss
10
10
20
-10 -3 0
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
- VDS
VSD
Page 6
Rev 2.3
2005-07-21
BSS 84 P
13 Typ. avalanche energy EAS = f (TA), parameter:
3
mJ
-12
E AS
V GS
-10
1.5
-8
-6 1 -4 0.5 -2
0 25
45
65
85
105
125
C
TA
165
0 0
0.2
0.4
0.6
0.8
1.2 nC
1.5
QGate
-72
V (BR)DSS
-20
20
60
100
C TA
180
Rev 2.3
Page 7
2005-07-21
BSS 84 P
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev 2.3
Page 8
2005-07-21