Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery
V nC A
Type SDT12S60
Package P-TO220-2-2.
Marking D12S60
Pin 1 C
Pin 2 A
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous forward current, TC=100C RMS forward current, f=50Hz
TC=25C, tp=10ms
Symbol IF IFRMS
Unit A
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150C, TC=100C, D=0.1
i 2t value, TC=25C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25C Operating and storage temperature
As V W C
Rev. 2.1
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2004-04-05
SDT12S60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 1.7 62 K/W Symbol min. Values typ. max. Unit
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=12A, Tj=25C IF=12A, Tj=150C
Symbol min. VF IR -
Unit
Reverse current
V R=600V, T j=25C V R=600V, T j=150C
Rev. 2.1
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2004-04-05
SDT12S60
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge
V R=400V, IF=12A, diF /dt=200A/s, Tj=150C
Unit max. nC ns pF
typ. 30 n.a.
Qc trr C
Switching time
V R=400V, IF=12A, diF /dt=200A/s, Tj=150C
Total capacitance
V R=1V, T C=25C, f=1MHz V R=300V, T C=25C, f=1MHz V R=600V, T C=25C, f=1MHz
450 45 43
Rev. 2.1
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2004-04-05
SDT12S60
1 Power dissipation Ptot = f (TC)
90
parameter: Tj175 C
24
A
20
70 60
18 16
Ptot
IF
50 40 30 20 10 0 0 20 40 60 80 100 120 140
14 12 10 8 6 4 2
C 180 TC
0 0
20
40
60
80
C TC
180
4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100C, d = tp/T
44
parameter: Tj , tp = 350 s
24
W A
150C 125C 100C 25C -40C d=0.1 d=0.2 36 d=0.5 d=1
16
PF(AV)
1 1.5 2.5
32 28 24
IF
12
20 8 16 12 4 8 4 0 0 0.5
V VF
0 0
10
12
16 A IF(AV)
Rev. 2.1
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2004-04-05
SDT12S60
5 Typ. reverse current vs. reverse voltage I R=f(VR)
10
2
parameter : D = t p/T
10 1
SDT12S60
A
150C
10 1 125C
K/W
100C 25C
10 0
10 0
ZthJC
IR
10 -1
D = 0.50 10
-1
10
-2
10
-2
10
-3
single pulse
V VR
600
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
tp
parameter: TC = 25 C, f = 1 MHz
600
pF
500 450
J
7 6 5 4 3 2 1 0 0
10
V VR
10
EC
400
100
200
300
400
V VR
600
Rev. 2.1
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2004-04-05
SDT12S60
9 Typ. capacitive charge vs. current slope
nC
32 28
IF *2
IF
Qc
IF *0.5
diF/dt
Rev. 2.1
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2004-04-05
SDT12S60
TO-220-2-2
A P D U H B V F W J G E
symbol min A B C D E F G H J K L M N P T U V W 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 [mm] max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157
N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
T K
Rev. 2.1
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2004-04-05
SDT12S60
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1
Page 8
2004-04-05