AT-41400
Features
Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz High Gain-Bandwidth Product: 9.0 GHz Typical fT
that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 at 1 GHz , makes this device easy to use as a low noise amplifier. The AT-41400 bipolar transistor is fabricated using Hewlett-Packards 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.
Chip Outline
Description
Hewlett-Packards AT-41400 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances
4-99
5965-8922E
Note: For more information, see Tape and Reel Packaging for Semiconductor Devices.
GA
dB
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz
GHz A A pF
0.17
Notes: 1. RF performance is determined by packaging and testing 10 devices per wafer. 2. For this test, the emitter is grounded.
4-100
16 14 12 GAIN (dB) 10 8
GA
2.0 GHz
4.0 GHz
8 6 NF (dB) 4
NFO
3 2 1
4
NFO 2.0 GHz
2 0
10
20
30
40
10
20
30
40
FREQUENCY (GHz)
IC (mA)
IC (mA)
Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA.
Figure 2. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz.
Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V.
24 P1 dB (dBm)
40 35
20
1.0 GHz
20
P1dB
GA (dB)
16
25
2.0 GHz
30
16
MSG
11
2.0 GHz
20 15 10 5
|S21E|2 MAG
12 G1 dB (dB)
4.0 GHz G1dB
8
4.0 GHz
10
20
30
40
IC (mA)
Figure 4. Output Power and 1 dB Compressed Gain vs. Collector Current. VCE = 8 V.
Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA.
Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V.
4-101
NFO (dB)
4.0 GHz
Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .73 -39 28.3 25.84 159 0.5 .60 -121 22.2 12.91 113 1.0 .57 -156 17.2 7.27 94 1.5 .56 -172 13.7 4.84 84 2.0 .57 176 11.4 3.71 77 2.5 .57 170 9.5 2.97 71 3.0 .60 164 8.0 2.52 64 3.5 .60 157 6.8 2.18 61 4.0 .61 152 5.5 1.89 55 4.5 .63 147 4.7 1.72 51 5.0 .63 144 3.7 1.53 46 5.5 .65 139 3.1 1.42 42 6.0 66 136 2.1 1.28 38
dB -39.2 -30.2 -28.0 -26.4 -24.9 -23.6 -22.3 -20.9 -20.1 -18.7 -17.8 -17.0 -16.1
S12 Mag. .011 .031 .040 .048 .057 .066 .077 .090 .099 .116 .129 .141 .156
S22 Ang. 75 48 51 59 66 69 72 77 79 81 80 82 83 Mag. .94 .61 .50 .47 .46 .46 .45 .47 .47 .47 .48 .49 .50 Ang. -12 -28 -25 -25 -24 -26 -28 -29 -30 -36 -40 -44 -47
Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .56 -60 31.8 39.07 152 0.5 .54 -145 23.5 15.00 104 1.0 .54 -170 18.1 8.03 90 1.5 .55 179 14.5 5.30 82 2.0 .56 170 12.1 4.04 76 2.5 .56 165 10.2 3.24 72 3.0 .58 159 8.8 2.75 65 3.5 .59 154 7.5 2.37 62 4.0 .60 149 6.3 2.06 57 4.5 .61 145 5.4 1.87 53 5.0 .62 142 4.5 1.67 49 5.5 .64 137 3.8 1.54 44 6.0 .65 134 2.9 1.40 41
A model for this device is available in the DEVICE MODELS section.
dB -40.9 -32.8 -29.6 -26.9 -24.7 -23.1 -21.6 -20.4 -19.3 -18.1 -17.3 -16.5 -15.7
S12 Mag. .009 .023 .033 .045 .058 .070 .083 .096 .108 .124 .136 .150 .165
S22 Ang. 69 56 65 72 75 78 79 82 83 84 83 85 84 Mag. .87 .49 .42 .41 .41 .40 .40 .41 .42 .42 .43 .42 .44 Ang. -18 -28 -23 -22 -23 -23 -25 -26 -28 -33 -36 -40 -45
4-102
Base Pad
90 m 3.54 mil
Emitter Pad
4-103