PD - 91386C

IRF5305S/L
HEXFET Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l

VDSS = -55V RDS(on) = 0.06

ID = -31A
S

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications.

D 2 P ak

T O -26 2

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Max.
-31 -22 -110 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case )

Units
A W W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

Max.
1.4 40

Units
C/W

4/1/99

IRF5305S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 -2.0 8.0 Typ. -0.034 14 66 39 63 7.5 1200 520 250 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.06 VGS = -10V, ID = -16A -4.0 V VDS = VGS, ID = -250A S VDS = -25V, ID = -16A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 ID = -16A 13 nC VDS = -44V 29 VGS = -10V, See Fig. 6 and 13 VDD = -28V ID = -16A ns RG = 6.8 RD = 1.6, See Fig. 10 Between lead, nH and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
I SM

V SD t rr Q rr ton

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol -31 showing the A G integral reverse -110 p-n junction diode. S -1.3 V TJ = 25C, IS = -16A, VGS = 0V 71 110 ns TJ = 25C, IF = -16A 170 250 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width 300s; duty cycle 2%.

Uses IRF5305 data and test conditions

VDD = -25V, Starting TJ = 25C, L = 2.1mH

RG = 25, I AS = -16A. (See Figure 12)

TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

ISD -16A, di/dt -280A/s, VDD V(BR)DSS,

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IRF5305S/L
1000
TOP VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V

1000

-ID , D rain-to-S ource C urrent (A )

-ID , D rain-to-S ourc e C urrent (A )

VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP

100

100

10

10

-4 .5V 20 s P U L S E W ID TH TJc==25C T 25 C A
0.1 1 10 100

-4 .5 V 20 s P U L S E W ID T H TJ = 17 5C TC = 175C
0.1 1 10

100

-VD S , D rain-to-S ource V oltage (V )

-VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.0

TJ = 2 5C TJ = 17 5 C

R D S (on ) , D rain -to-S ou rc e O n R es is tan c e (N orm a liz ed)

I D = -2 7A

-I D , D rain-to -So urc e C urre nt (A )

1.5

10

1.0

0.5

1 4 5 6 7

V DS = -2 5 V 2 0 s P U L S E W ID TH
8 9 10

0.0 -60 -40 -20 0 20 40 60 80

V G S = -1 0V

100 120 140 160 180

-V G S , G ate -to-Source Volta ge (V )

T J , J unc tion T em perature (C )

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRF5305S/L
2500

2000

C iss C oss

1500

1000

-V G S , G ate-to-S ource V oltage (V)

V GS C iss C rs s C o ss

= = = =

0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d

20

I D = -16 A V D S = -4 4V V D S = -2 8V

16

C, C apacitanc e (pF )

12

C rss
500

0 1 10 100

0 0 10 20 30

FO R TE S T C IR C U IT S E E FIG U R E 1 3
40 50 60

-V D S , D rain-to-S ourc e V oltage (V )

Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

-IS D , R everse Drain C urrent (A )

O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)

-ID , D rain C urrent (A )

100

100

100 s

TJ = 17 5 C T J = 2 5C

10 1m s

10 0.4 0.8 1.2 1.6

VG S = 0 V

1 1

T C = 25 C T J = 17 5C S ing le P u lse
10

10m s

2.0

100

-VS D , S ourc e-to-D rain V oltage (V )

-VD S , D rain-to-S ourc e V oltage (V )

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRF5305S/L
V DS
35

RD

VGS RG

D.U.T.
+

30

-ID , Drain Current (A)

25

-10V
Pulse Width 1 s Duty Factor 0.1 %

20 15

Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf

10
VGS

10%

0 25 50 75 100 125 150 175

90% VDS

TC , Case Temperature

( C)

Fig 9. Maximum Drain Current Vs. Case Temperature

Fig 10b. Switching Time Waveforms

10

Thermal Response (Z thJC )

D = 0.50 0.20 0.10 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2

0.1

0.05 0.02 0.01

0.01 0.00001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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V DD

IRF5305S/L
700 VDS L

E A S , S ingle P ulse A valanche E nergy (m J)

TO P
600

B O TTO M
500

ID -6 .6A -1 1A -16 A

RG

D .U .T IA S D R IV E R
0 .0 1

VD D A

-2 0 V tp

400

300

15V

200

Fig 12a. Unclamped Inductive Test Circuit

100

V D D = -2 5V
25 50 75 100 125 150

A
175

IAS

S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

tp V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F .3F

VG

VGS
-3mA

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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QGS

QGD

D.U.T.

-10V

VDS

IRF5305S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive P.W. Period D=

P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[VDD]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS

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IRF5305S/L
D2Pak Package Outline

1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2

4.69 (.1 85) 4.20 (.1 65)

-B 1.3 2 (.05 2) 1.2 2 (.04 8)

1 0.16 (.4 00 ) RE F.

6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.

1.7 8 (.07 0) 1.2 7 (.05 0)

3X

1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)

0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M

0.5 5 (.022 ) 0.4 6 (.018 )

M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )

NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.

LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E

8.89 (.3 50 ) 17 .78 (.70 0)

3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X

Part Marking Information

D2Pak

IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E

PART NUM BER F530S 9 24 6 9B 1M

DATE CODE (Y YW W ) YY = Y E A R W W = W EEK

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IRF5305S/L
Package Outline
TO-262 Outline

Part Marking Information

TO-262

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IRF5305S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )

1 .6 5 (.0 6 5 )

1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )

1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )

2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )

TR L
10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)

F E E D D IRE C TIO N

13.50 (.532 ) 12.80 (.504 )

2 7.4 0 (1.079) 2 3.9 0 (.9 41)

4

33 0.00 (1 4.1 73) MA X.

60.00 (2.3 62) MIN .

NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

26 .40 (1.03 9) 24 .40 (.961 ) 3

3 0.40 (1.1 97) MAX. 4

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10

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