ADVANCED SEMICONDUCTOR FUNDAMENTALS ROBERT F. PIERRETMODULAR SERIES ON SOLID STATE DEVICES Robert F. Pierret and Gerold W. Neudeck, Editors Volume VI Advanced Semiconductor Fundamentals Second Edition Robert F. Pierret Purdue University axon ed Hall Pearson Education, Inc. Upper Saddle River, New Jersey 07458Preface Advanced Semiconductor Fundamentals is viewed by the author as a doorway to the graduate or journal-level discussion of solid-state devices. It was originally prepared in part as.a supplement to a widely used graduate text and in part to provide background information required in advanced-level volumes of the Modular Series on Solid State Devices. Since its introduction in 1987, the volume has subsequently become routinely employed in introductory graduate-level courses on solid-state devices The second edi- tion primarily revises dated sections of the volume and, with a significant increase in end-of-chapter problems, expands its usefulness as a stand-alone text ‘The designation “advanced” used in the ttle of the volume is of course a relative term: the materialin the volume is “advanced” relative to that in Modular Series Volume Tand chapters one through three in Semiconductor Device Fundamentals, other works by the author. The cited works are recommended prerequisites for the present volume. The present volume extends and reinforces the concepts presented in the cited works. Following the general philosophy of the Modular Series, the present volume is devoted to a specific topic area and is essentially self-contained. The modular nature of the series permits the volumes to be used in courses of either standard or nonstandara format, the latter including short courses, television or web-based courses, and in-house continuing education courses. Students, practicing engineers, and scientists should also find this and the other volumes useful for individual instruction, whether it be for learn- ing, reference, or review. Coherent presentation of the material in Advanced Semiconductor Fundamentals in the standard lecture format requires at least 15 fifty- minute periods. With minor deletions, the material in this volume is regularly covered during the first sin weeks of a one-semester, three-credit-hour, first-year graduate-level course in Electrical and Computer Engineering at Purdue University. ‘The topic coverage in the second edition is essentially identical to that in the first edition. The treatment includes basic semiconductor properties, elements of Quantum Mechanics, energy band theory, equilibrium carrier statistics, recombination-generation processes, and drift/diffusion carrier transport, Unfortunately, length limitations pre~ cluded coverage of a number of other desirable topics. Nevertheless, the coverage should be sufficient for understanding or delving deeper into the operation of the major semi conductor device structures. Of the many semiconductors silicon (Si) totally dominates the present marketplace: the vast majority of discrete devices and integrated circuits are silicon based. Given its position of dominance, attention is focused herein on Si in she text development. Where feasible, however, GaAsand other semiconductors are featured as the discussion warrants It should be mentioned that throughout the volume every effort has been made to use normally encountered symbols for a given quantity. In some instances this has led to dual-meaning symbols (e-g..k for wavenumber and for the Boltzmann constant). ‘The proper interpretation of a dual-meaning symbol is invariably obvious from con- text. In the autho-’s opinion it is preferable to court ambiguity rather than introduce v