DIODO IDEAL

FIGURE 1-1 Ideal diode: (a) symbol; (b) characteristics.

FIGURE 1-2 (a) Conduction and (b) nonconduction states of the ideal diode as determined by the applied bias.

MATERIAIS SEMICONDUTORES

FIGURE 1-4 Defining the metric units of resistivity.

FIGURE 1-5 Ge and Si single-crystal structure.

TABELA 1.1 Valores Tpicos de Resistividade.

Condutor 10-6 -cm

Semicondutor 50 -cm (germnio) 50.103 -cm (silcio)

Isolante 1012 -cm (mica)

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

2004 by Pearson Education

ESTRUTURA ATMICA

FIGURE 1-6 Atomic structure: (a) germanium; (b) silicon.

FIGURE 1-7 Covalent bonding of the silicon atom.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

2004 by Pearson Education

NVEIS DE ENERGIA
W = QV 1eV = (1, 6 1019 C )(1V ) = 1, 6 1019 J

FIGURE 1-8a Energy levels: discrete levels in isolated atomic structures.

FIGURE 1-8b Energy levels: conduction and valence bands of an insulator; semiconductor; and conductor.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

MATERIAIS EXTRNSECOS
FIGURE 1-11 Boron impurity in p-type material.

FIGURE 1-9 Antimony impurity in n-type material.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

FIGURE 1-10 Effect of donor impurities on the energy band structure.

2004 by Pearson Education

PORTADORES DE CARGA

FIGURE 1-12 Electron versus hole flow.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

FIGURE 1-13 (a) n-type material; (b) p-type material.

2004 by Pearson Education

DIODO SEMICONDUTOR

FIGURE 1-15 No-bias conditions for a semiconductor diode.

FIGURE 1-14 p-n junction with no external bias.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

2004 by Pearson Education

FIGURE 1-17 Reverse-bias conditions for a semiconductor diode.

FIGURE 1-16 Reverse-biased p-n junction.

FIGURE 1-18 Forwardbiased p-n junction.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

DIODO SEMICONDUTOR
I D = I S ( e kVD
IS Corrente de saturao reversa; K 11600/n, com n=1 para o Ge e n=2 para o Si em nveis baixos de corrente no diodo e n=1 para o Si e Ge para nveis maiores de corrente. Tk - = TC + 273.
Tk

1)

FIGURE 1-19 Silicon semiconductor diode characteristics. FIGURE 1-22 Zener region.
Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e
2004 by Pearson Education

FIGURE 1-23 Comparison of Si and Ge semiconductor diodes.

FIGURE 1-24 Variation in diode characteristics with temperature change.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

2004 by Pearson Education

VALORES DE RESISTNCIA
Resistncia cc ou Esttica

RD =

VD ID

FIGURE 1-30 Determining the dc resistance of a diode at a particular operating point.

FIGURE 1-31 Example 1.1.

Resistncia ca ou Dinmica

rD =

VD I D

FIGURE 1-32 Defining the dynamic or ac resistance.

FIGURE 1-33 Determining the ac resistance at a Q-point.

rD = rD =

26mV ID 26mV + rB ID

Resistncia ca Mdia

rav =

VD I D

pt a pt

FIGURE 1-34 Example 1.2.

FIGURE 1-35 Determining the average ac resistance between indicated limits.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

2004 by Pearson Education

CIRCUITOS EQUIVALENTES

FIGURE 1-37 Components of the piecewise-linear equivalent circuit.

FIGURE 1-38 Simplified equivalent circuit for the silicon semiconductor diode.

FIGURE 1-36 Defining the piecewise-linear equivalent circuit using straight-line segments to approximate the characteristic curve.

FIGURE 1-39 Ideal diode and its characteristics.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e
2004 by Pearson Education

CURVAS DAS CARACTERSTICAS ELTRICAS

FIGURE 1-40 Electrical characteristics of a high-voltage, low-leakage diode.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

FIGURE 1-41c Terminal characteristics of a high-voltage diode. (Continued)

2004 by Pearson Education

FIGURE 1-41a

Terminal characteristics of a high-voltage diode.

FIGURE 1-41b

Terminal characteristics of a high-voltage diode. (Continued)

2004 by Pearson Education

CAPACITNCIA DE TRANSIO E DIFUSO

FIGURE 1-42 Transition and diffusion capacitance versus applied bias for a silicon diode.

FIGURE 1-43 Including the effect of the transition or diffusion capacitance on the semiconductor diode.
Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

2004 by Pearson Education

TEMPO DE RECUPERAO REVERSA

FIGURE 1-44 Defining the reverse recovery time.

2004 by Pearson Education

DIODOS ZENER

FIGURE 1-53 Conduction direction: (a) Zener diode; (b) semiconductor diode. FIGURE 1-52 Reviewing the Zener region.

FIGURE 1-54 Zener equivalent circuit: (a) complete; (b) approximate. FIGURE 1-55 Zener test characteristics.

2004 by Pearson Education

DIODOS ZENER

FIGURE 1-56a

Electrical characteristics for a 10-V, 500mW Zener diode.

FIGURE 1-56b

Electrical characteristics for a 10-V, 500mW Zener diode.

TC =
Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e

VZ 100% [ % C] VZ (T1 T0 )
2004 by Pearson Education

DIODOS EMISSORES DE LUZ

FIGURE 1-59 (a) Process of electroluminescence in the LED; (b) graphic symbol.

FIGURE 1-60a-c Hewlett-Packard subminiature high-efficiency red solid-state lamp: (a) appearance; (b) absolute maximum ratings; (c) electrical/optical characteristics. (Courtesy Hewlett-Packard Corporation.) FIGURE 1-60d Hewlett-Packard subminiature high-efficiency red solidstate lamp: relative intensity versus wavelength (Courtesy Hewlett-Packard Corporation.) (Continued)

2004 by Pearson Education

10

FIGURE 1-60e Hewlett-Packard subminiature high-efficiency red solidstate lamp: forward current versus forward voltage (Courtesy HewlettPackard Corporation.) (Continued)

FIGURE 1-60g Hewlett-Packard subminiature high-efficiency red solid-state lamp: relative efficiency versus peak current (Courtesy Hewlett-Packard Corporation.) (Continued)

FIGURE 1-60f Hewlett-Packard subminiature high-efficiency red solid-state lamp: relative luminous intensity versus forward current (Courtesy Hewlett-Packard Corporation.) (Continued)

FIGURE 1-60h Hewlett-Packard subminiature highefficiency red solid-state lamp: maximum peak current versus pulse duration (Courtesy Hewlett-Packard Corporation.) (Continued)

DIODOS EMISSORES DE LUZ

FIGURE 1-61 Litronix segment display.

FIGURE 1-62 Monolithic diode array.

Robert L. Boylestad and Louis Nashelsky Electronic Devices and Circuit Theory, 8e
2004 by Pearson Education

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