Department of ECE

EDC Lab Manual

CONTENTS
S. No.
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21.

Experiment Name
V-I Characteristics of PN Junction Diode V-I Characteristics of Zener Diode HW, FW with and without filter Bridge Rectifier with & Without filter VI Characteristics of Regulator Input Output Characteristics of Common Emitter Transistor Frequency Response of RC Coupled Amplifier Emitter Follower Negative Feedback Amplifier RC Phase Shift Oscillator Hartely & Colpitts Oscillator Characteristics of JFET Common Source Amplifier Characteristics of UJT UJT Relaxation Oscillator Characteristics of SCR Diac & Triac Characteristics Clipper, Clamper & Voltage Doubler LDR Photo Diode & Photo Transistor Characteristics Solar Cell and Opto Coupler Extra Syllabus: Astable Multivibrator

Page No.
3 9 17 25 33 39 45 51 55 61 67 75 81 87 93 99 105 113 125 131 137

Department of ECE

EDC Lab Manual

Characteristics of PN Junction Diode Forward Bias:

(0-50) mA 470

+
RPS (0-30) V

A (0-1) V IN24001 K

V -

Reverse Bias:

1. V-I CHARACTERISTICS OF PN JUNCTION DIODE

Aim:
To draw the voltage current characteristics of PN junction diode under forward and reverse bias condition and determine cut in voltage, reverse saturation current and forward dynamic resistance.

Apparatus Required: S. No
1. 2. 3. 4. 5. 6. 7. 8. 9.

Name of the Apparatus

PN Junction Diode RPS Resistor Voltmeter Voltmeter Ammeter Ammeter Bread board Connecting wires

Range
IN4001 (0-30)v 470 (0-1)v (0-15)v (0-50)mA (0-50) A ---

Quantity
1 1 1 1 1 1 1 1 1set

Theory:
A PN junction is formed by diffusing P-type material to one half side and N-type material other half side. The plane dividing the two zones is known as a junction.

Forward Bias:
When the positive terminal of the external battery is connected to the Pregion and negative terminal is connected to the N-region. as forward biased PN junction. Then it is called

Model Graph:

Vr (Volts) Ir (mA)

If (mA)

Vf (Volts)

Tabulation:
Forward Bias: S. No Voltage In Volts(VF) Current In mA (IF)

Reverse Bias:
When the negative terminal of the external battery is connected to the P-region and positive terminal is connected to the N-region. Then it is called as reverse biased PN junction.

Procedure:
The connections are made as shown in the circuit diagram. The power supply is switched ON The voltage in the RPS is varied and the corresponding Ammeter & Voltmeter readings are noted and tabulated.

Graph:
The graph is drawn by taking voltage along x-axis and current along yaxis.

Tabulation:
Reverse Bias: S. No Voltage In Volts (VR) Current In A (IR)

Precaution:
Before connect the diode in the circuit check the resistance in forward and reverse bias condition. Voltmeter should be connected in parallel at any time. Ammeter should be connected in series at any time.

Result:
Thus the V-I characteristics of PN Junction diode under forward and reverse bias condition was drawn and determined the cut in voltage, reverse saturation current and forward dynamic resistance Cut in voltage ----------------------------------------Forward dynamic resistance ---------------------Reverse saturation current -----------------------Reverse Dynamic resistance -----------------------

Application:
It is used in clipper and clamper circuits. As a switch in logic circuits used in computers.

Viva Questions:
1. What is meant by energy gap? 2. Define valence band and conduction band? 3. What is the major difference between switching diode and a rectifier diode? 4. What is dynamic resistance? 5. What is meant by p- type and n-type semiconductor?

Characteristics of Zener Diode:

Circuit Diagram:
Forward Bias:

2. V-I CHARACTERISTICS OF ZENER DIODE

Aim:
To draw the V-I characteristics of Zener diode under forward and reverse bias condition and determine cut in voltage, reverse saturation current and forward and reverse dynamic resistance.

Apparatus Required: S. No.

1. 2. 3. 4. 5. 6. 7. 8.

Name of the Apparatus

Zener diode RPS Resistor Voltmeter Voltmeter Ammeter Bread board Connecting wires

Range
FZ 5.1 (0-30)v 470 (0-1)v (0-15)v (0-50) mA ---

Quantity
1 1 1 1 1 1 1 1set

Theory:
A Zener diode is designed to operate in the reverse breakdown region. It is heavily doped to reduce the reverse breakdown voltage. This causes a very thin depletion layer. As a result, a Zener diode has a sharp breakdown voltage.

Forward bias:
When the positive terminal of the external battery is connected to the anode and negative terminal is connected to the cathode. When the applied voltage is zero, no current flows through the Zener diode. When the forward voltage is increased, the barrier is reduced and the current starts flowing in the circuit.

Reverse Bias:

10

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