FQD6N60C: 600V N-Channel MOSFET

FQD6N60C 600V N-Channel MOSFET
QFET
FQD6N60C
600V N-Channel MOSFET
Features
4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V Low gate charge ( typical 16 nC ) Low Crss ( typical 7 pF) Fast switching 100 % avalanche tested Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D D
D-PAK
FQD Series
G!
Absolute Maximum Ratings

Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
Parameter
Drain-Source Voltage - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD6N60C
600 4 2.4 16 30 300 4.0 8.0 4.5 80 0.78 -55 to +150 300
Units
V A A A V mJ A mJ V/ns W W/C C C
Thermal Characteristics
Symbol
RJC RJA RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
Typ
----
Max
1.56 50 110
Units
C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQD6N60C Rev. A
Package Marking and Ordering Information

Device Marking FQD6N60C FQD6N60C Device FQD6N60CTM FQD6N60CTF Package DPAK DPAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000
Electrical Characteristics
Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
600 ------
-0.6 -----
--1 10 100 -100
V V/C A A nA nA
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.0 A VDS = 40 V, ID = 2.0 A
(Note 4)
2.0 ---
-1.7 4.8
4.0 2.0 --
V S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---620 65 7 810 85 10 pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 5.5 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
VDD = 300 V, ID = 5.5 A, RG = 25
--------
15 45 45 45 16 3.5 6.5
40 100 100 100 20 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.0 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.0 A VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/s
(Note 4)
------
---310 2.1
4.0 16 1.4 ---
A A V ns C
FQD6N60C Rev. A
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
10
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
150 C -55 C
10
0
25 C
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-2
10
-1
10
10
10
-1
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
RDS(ON) [ ], Drain-Source On-Resistance
VGS = 10V
4
IDR, Reverse Drain Current [A]
10
10
VGS = 20V
150 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
-1
1
Note : TJ = 25
10
12
14
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics

12
Figure 6. Gate Charge Characteristics
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VGS, Gate-Source Voltage [V]
VDS = 120V VDS = 300V
800
Capacitances [pF]
Ciss
VDS = 480V
600
Coss
400
Note ; 1. VGS = 0 V 2. f = 1 MHz
200
Crss
2
Note : ID = 5.5A
0 -1 10
10
10
12
16
QG, Total Gate Charge [nC]
FQD6N60C Rev. A
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature

3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 2.0 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature

4.5
10
Operation in This Area is Limited by R DS(on)
10
10 s 100 s 1 ms 10 ms DC

10
3
3.0
10
1.5
Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o
10
-1
10
10
10
0.0 25
50
75
100
125
150
TC, Case Temperature []
Figure 11. Transient Thermal Response Curve
Z JC Thermal Response (t),
10
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z J C t) = 1 .5 6 /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FQD6N60C Rev. A
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG 10V VGS
RL VDD
VDS
90%
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
FQD6N60C Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
dv/dt controlled by RG ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
FQD6N60C Rev. A
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FQD6N60C Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx
ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series
FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I2C i-Lo ImpliedDisconnect
Across the board. Around the world. The Power Franchise Programmable Active Droop
IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN
POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SerDes SILENT SWITCHER SMART START
SPM Stealth SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
8 FQD6N60C Rev. A

FQD6N60C: 600V N-Channel MOSFET

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FQD6N60C 600V N-Channel MOSFET

Absolute Maximum Ratings

* When mounted on the minimum pad size recommended (PCB Mount)

2005 Fairchild Semiconductor Corporation