AO4801

30V P-Channel MOSFET

General Description
The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch.

Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -30V -5A < 48mΩ < 57mΩ < 80mΩ

100% UIS Tested 100% Rg Tested

SOIC-8 Top View Bottom View D1 D2

SOIC-8 Top View

S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1

G1 S1

G2 S2

Pin1

Absolute Maximum Ratings TA=25° unless otherwise noted C Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG

Maximum -30 ±12 -5 -4 -28 11 18 2 1.3 -55 to 150

Units V V A A mJ W ° C

Symbol
t ≤ 10s Steady-State Steady-State

RθJA RθJL

Typ 48 74 32

Max 62.5 90 40

Units ° C/W ° C/W ° C/W

Rev 4: Feb. 2011

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AO4801

Electrical Characteristics (TJ=25° unless otherwise noted) C Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A RDS(ON) Static Drain-Source On-Resistance C TJ=125° VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-5A IS=-1A,VGS=0V -0.5 -28 40 48 45 60 18 -0.7 -1 -2.5 645 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 4 80 55 7.8 7 VGS=-4.5V, VDS=-15V, ID=-5A 1.5 2.5 6.5 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω IF=-5A, dI/dt=100A/µs 3.5 41 9 11 3.5 12 48 60 57 80 -0.9 Min -30 -1 -5 ±100 -1.3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° The value in C. any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150° using ≤ 10s junction-to-ambient thermal resistance. C, C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° Ratings are based on low frequency and duty cycles to keep C. C. initialTJ=25° D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150° The SOA curve provides a single pulse ratin g. C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 4: Feb. 2011

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 -10V 25 20 -ID (A) -ID(A) 15 -2.5V 10 5 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 90 VGS=-2.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (° C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=-4.5V ID=-3.5A VGS=-10V ID=-5A VGS=-2V 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 25° C 10 125° C -4.5V -3V 15 20 VDS=-5V

70 RDS(ON) (mΩ )

50

VGS=-4.5V

17 VGS=-2.5V 5 ID=-2.5A 2 10

30 VGS=-10V 10

100 ID=-5A

1.0E+01 1.0E+00

80 125° C RDS(ON) (mΩ ) 60 -IS (A)

40
1.0E-01 1.0E-02

125° C

25° C 1.0E-03

40

25° C 1.0E-04

20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)

Rev 4: Feb. 2011

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AO4801

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 VDS=-15V ID=-5A Capacitance (pF) 1200 1000 Ciss 800 600 400 Coss 200 0 0 6 9 Qg (nC) Figure 7: Gate-Charge Characteristics 3 12 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss

4 -VGS (Volts)

100.0 RDS(ON) limited

10000
10µs TJ(Max)=150° C TA=25° C

10.0

1000
Power (W)
100µs

-ID (Amps)

1.0 TJ(Max)=150° C C TA=25°

1ms 10ms 1s 10s DC

100

0.1

10

0.0 0.1 1 10 100

1 0.00001

0.001

0.1

10

1000

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

10 Zθ JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90° C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Single Pulse Ton

0.01 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 4: Feb. 2011

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AO4801

Gate Charge Test Circuit & Waveform

Vgs Qg -10V
VDC

VDC

DUT Vgs Ig

Resistive Switching Test Circuit & Waveforms

RL Vds Vgs Vgs Rg DUT
VDC

Vgs Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Vds Isd Vgs Ig

VDC

+ Vdd -Vds

Rev 4: Feb. 2011

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+
Charge
ton td(on) tr t d(off) toff tf

Vds

Qgs

Qgd

Vdd

90%

10%

E AR= 1/2 LIAR

Vds BVDSS Vdd Id I AR

Q rr = - Idt

-Isd

-I F

dI/dt -I RM Vdd

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