I. Introduction II. Objective III.Literature Review IV.Methodology V.Future Development VI.

Gantt Chart

High electron mobility transistor(HEMT) is a three terminal device consisting of a junction/channel between 2 different band-gap materials (heterojunction) instead of a doped region (MOSFET). HEMT is one type of FET with excellent high frequency characteristics. Operation principle of HEMT is based on metal semiconductor field effect transistor MESFET.

HEMT is also known as MODFET(Modulation-doped FET) TEGFET(Two-dimensional Electron Gas FET) SDHT(Selectively Doped heterostructure Transistor) HFET(Heterojunction FET).

Figure 1 Schematic Draw of HEMT device[1]

The current between drain and source is controlled by the space charge which is changing by control the voltage to the gate contact (Behave like a switch). The current between drain and source is flowing through the two dimensional conducting channel (2DEG) which created by electrons. The 2DEG channel is formed below the hetero-interface of two different band-gap material as in the case of AlGaN/GaN material and AlGaAs/GaAs material.

Two dimensional electron gas is a couple of nanometer thick thin layer for all the electrons gathered to minimize their energy. It is also known as a conducting channel where allows free electrons travel from source to drain. At heterostructure junction, the Fermi level must be continuous over the heterostructure since the two different band gap materials are in contact.

In order fulfill the requirement of Fermi level, the energy band will be bend and an energy valley or potential well will be formed. According to Charles Kittel Introduction to solid state physics, the potential well is very thin, electron prefer to diffuse sideways instead of up and down because otherwise they would have to move out the well into a less preferable energy state.

Figure 2 Conduction band of an n-doped AlGaAs and semi-insulating GaAs Junction[2]

High Electron Mobility Transistor is a promising candidate for microwave power amplification such as mobile satelite communication systems because HEMT has lower noise and better performance at high frequencies. As compared to MESFET, HEMT has higher transconductance due to the close confinement of channel to the gate and high mobility of the carriers without presence of ionized impurity scattering.

As compared to Heterojunction bipolar transistor (HBT), HBTs able to operate a higher current and power density however, device dimension critical for HBT speed are not planar.

Figure 3 Performance Comparison, Weakness and strength of MESFET,HEMT and HBT[4]

To simulate characteristics of high electron mobility transistor using Sentaurus. To simulate and study the fabrication process of the device structure.

Technology Computer Aided Design (TCAD) is using physics based computer for simulating semiconductor processing and device operation to design , analyze and optimize semiconductor devices.[5] This physics based approach is represent available of physical knowledge of semiconductor processing and devices in terms of computer models.

The advantages of TCAD: Less time consuming when developing and characterizing a novel structures. Easy for understanding of how a device work well as they can be utilized in order to reproduce or predict a trend. Simulation reduce the cost of a device studying without using real devices.

Sentaurus TCAD is the software suite consists of many different modules that are used in different situation to simulate your desired devices, invented by Synopsys Inc. For this final year project , there are 3 modules are used instead of 4 modules. 1. Sentaurus Workbench(SWB) 2. Sentaurus Device(SDevice) 3. Sentaurus Structure Editor(SDE) 4. Inspect/Techplot Sentaurus Work Bench(SWB) is primary graphical font that integrates Sentaurus simulation program into single environment. The graphical user interface is used to design, organize and run simulation.

Ligament is a generic interface for TCAD process simulations. Ligament consist of 2 editor : Ligament Flow Editor ->To create and edit process flows. Ligament Layout Editor->To create and edit layouts. Techplot is a plotting software with 2D and 3D visualization for visualizing data from simulations and experiments.11

Figure 4 Conventional Epitaxial Structure of a basic AlGaAs/GaAs HEMT[5]

Substrate

Cap Layer

Metallization

Buffer Layer

Donor Layer

Passivation

Buffer Layer 2

Delta doping layer

Gate formation

Channel Layer

Spacer Layer

Figure 5 Flow Chart of Fabricating pHEMT in Sentaurus

Layer Buffer Layer Buffer Layer

Material GaAs AlGaAs

Deposit Thickness 20nm 4nm

Annealing Temperature 200c 1050c

Time of Annealing 10 sec 10 sec

Channel Layer
Spacer Layer Delta doping Layer Donor Layer Cap Layer

InGaAs
AlGaAs Silicon, Si N+ AlGaAs N+ GaAs

12nm
4nm 5nm 40nm 4nm

1050c
1050c 1050c 1050c 1050c

10 sec
10 sec 10 sec 10 sec 10 sec

Passivation Silicon Nitride 10nm 1050c 10 sec Layer Si3N4 Figure 6 Table of parameters for deposition process of pHEMT in Sentaurus

GaAs Buffer Layer

SI GaAs Substrate

Figure 7 Design and Structure of my AlGaAs/InGaAs/GaAs HEMT

GaAs Cap Layer

Nickel Contact

Si3N4 Passivation Layer

n+AlGaAs Donor layer Silicon Delta Doped Layer AlGaAs Spacer Layer InGaAs Channel AlGaAs Buffer Layer

Figure 8 Design and Structure of my AlGaAs/InGaAs/GaAs HEMT

In order to achieve higher output power density , high electron mobility transistor (HEMT) need a high current density and high sheet charge concentration. The breakdown voltage is an important parameter to determine the classification of power devices. The higher breakdown voltage can be biased at higher drain voltage so drain efficiency, voltage gain and power added efficiency will increased.

There are several approach in order to increase the breakdown voltage for HEMT proposed by Maurice H.Francombe Frontiers of thin film technology. Planar doping AlGaAs layer (Donor Layer). Low Temperature grown GaAs Buffer layer.

Substrate: Semi-insulating GaAs According to thesis of Dr.Noor Muhammand Memon, he mentioned GaAs has attractive features at high frequencies compared to silicon. The conduction band electrons in GaAs is six times higher mobility and twice the peak drift velocity as that of silicon. This lead to low parasitic resistance, large transconductance and shorter transit time. The larger band-gap in GaAs allow working in a higher temperatures so it is important for small geometry power devices.

Buffer Layer: Unintentionally doped GaAs Actis et al 1995,stated the low temperature grown GaAs as buffer layer can increase the breakdown voltage and reduce the threading dislocation between channel and substrates. Channel Layer: Unintentionally doped InGaAs Based on Smith et al 1989, InGaAs helps maintaining a high breakdown voltage and InGaAs has good balance between its high mobility and manageable band gap.

Based on Roberto Menozzi and his team 1998,varying Al mole fraction x into AlGaAs can widen the band gap but they also investigated the parasitic effect (DX center) after increasing x more than 0.2.

So to avoiding AlGaAs is presence of a deep level defect (DX center) which trap electron and weaken the HEMT operation, thin layer of InGaAs will be used to form a pseudomorphic HEMT due to large conduction band discontinuity between InGaAs/AlGaAs can be achieved. Spacer Layer: AlGaAs Spacer layer is used to increase the mobility of electron in two dimensional electron gas channel. AlGaAs layer contains a low energy barrier for electron so It can maximize the high electron mobility in channel.

Passivation Layer: Silicon Nitride, Si3N4 Passivation Layer is used to keep unwanted element away from channel. Silicon Nitride is industry standard material as a source of passivation layer due to its has high dielectric constant.

Ohmic Contact layer: Nickel Nickel is often actual substrate contact because it has best sticking properties. In order to achieve low contact resistance, alloyed metal contact play an important role for optimum device performance.(Kezia Cheng)

The future development to enhance the HEMTs structure and characteristic: T-gate /Mushroom gate Alloyed Ohmic Contact Partially Oxidized pHEMTS

[1] Peter Javorka, Fabrication and Characterization of AlGaN/GaN High electron mobility Transistor,2004. [2] Andres Lundskog, Characterization of advance AlGaN HHEMT structures,2007. [3]Otto Berger, GaAs MESFET, HEMT and HBT Competition With Advanced Si RF technologies Mantech 1999. [4]L. Aucoin, Chapter IV. HEMTs and PHEMTs. [5]TCAD Sentaurus Tool Training Manual Book, Synopsys 2011. [6] Maurice H.Francombe , Frontiers of thin film technology, 2001. [7] Dr Noor Muhammad Memom, Modeling Techniques of Submicron GaAs MESFETs and HEMTs ,2008. [8] Actis et al 1995 [9] Smith et al, Milimeter-wave Power Operation of AlGaAs/InGaAs/GaAs Quatum Well MISFET, 1989. [10]Roberto Menozzi, Hot Electron and DX center Insensivitivity of Al0.25Ga0.75As/GaAs HFETs Designed For Microwave Power Applications , 1998. [11]Kezia Cheng, Effect of Ohmic Metal on Electrochemical Etching Of GaAs in pHEMT Manufacturing .