Prof.

Mohammed Zeki Khedher Department of Electrical Engineering University of Jordan

Power Electronics Lecture(8)

Thyristors

Most important type of power semiconductor device. Have the highest power handling capability.they have a rating of 5000V / 6000A with switching frequencies ranging from 1KHz to 20KHz.
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Is inherently a slow switching device compared to BJT or MOSFET. Used as a latching switch that can be turned on by the control terminal but cannot be turned off by the gate.

SCR

Symbol of Silicon Controlled Rectifier

Structure
G a te C a th o d e
+ 19 -3 17 -3 + 19 -3

n J3 J2

10

cm

n 10 10 10 10 cm

10

cm

p n J1 p p

13

-5 x 1 0 cm cm
-3 -3

14

cm

-3

17 19

}
}

} }

1 0 m 3 0 -1 00 m 5 0 -1 0 0 0 m 3 0 -5 0 m

Anode
5

Device Operation

Simplified model of a thyristor

Two Transistor Model of SCR

The general transistor equations are, I C = I B + ( 1 + ) I CBO I C = I E + I CBO I E = IC + I B I B = I E ( 1 ) I CBO

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Considering PNP transistor of the equivalent circuit, I E 1 = I A , I C = I C1 , = 1 , I CBO = I CBO1 , I B = I B1 I B1 = I A ( 1 1 ) I CBO1 ( 1)

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Considering NPN transistor of the equivalent circuit, I C = I C2 , I B = I B2 , I E2 = I K = I A + I G I C2 = 2 I k + I CBO2 I C2 = 2 ( I A + I G ) + I CBO2 ( 2 )

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From the equivalent circuit, we see that I C2 = I B1

2 I g + I CBO1 + I CBO 2 IA = 1 ( 1 + 2 )
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Case 1: When I g = 0 IA = 1 ( 1 + 2 ) I CBO1 + I CBO2

Case 2: When I G 0

2 I g + I CBO1 + I CBO 2 IA = 1 ( 1 + 2 )
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V-I Characteristic s
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Effects of gate current

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Turn-on Characteristi cs

ton =td +tr

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A K

tq

tC

t IA A n o d e cu rre n t b e g in s t o d ecre a se C o m m u t a t io n R ecove ry t1 t2 t3 di dt R e c o m b in a tio n t4 t5

tq= tc=

d e v ic e o f f t im e c ir c u it o f f t im e
trr tq tc tgr

Turn-off Characteris tics

t
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ij 2

dq2 d = = C j Vj 2 2 dt dt C j2 dV j dC j2 2 = + V j2 dt dt

dv/dt Triggering
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dq2 d ij 2 = = C j Vj 2 2 dt dt C j2 dV j2 dC j2 = + V j2 dt dt

)
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Methods of Thyristor Turn-on

Thermal Turn-on. Light. High Voltage. Gate Current. dv/dt.

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Thyristor Ratings
First Subscript D off state T ON state F Forward R Reverse Second Subscript W working R Repetitive S Surge or non-repetitive
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Third Subscript M Peak Value

Voltage Ratings

VDWM VRWM VT

VDRM VRRM dv dt

VDSM VRSM

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Current Ratings

ITaverage IH

ITRMS di dt

IL

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Gate Specification

I gt VgD Rthjc

Vgt QRR
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Diodes

Diode Product Range

Phase Control Thyristors

Fast switching Thyristors

Thyristor Types

Phase-control Thyristors (SCRs). Fast-switching Thyristors (SCRs). Gate-turn-off Thyristors (GTOs). Bidirectional triode Thyristors (TRIACs). Reverse-conducting Thyristors (RCTs).
28

Static induction Thyristors (SITHs). Light-activated silicon-controlled rectifiers (LASCRs). FET controlled Thyristors (FET-CTHs). MOS controlled Thyristors (MCTs).

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These are converter thyristors. The turn-off time tq is in the order of 50 to 100sec. Used for low switching frequency. Commutation is natural commutation On state voltage drop is 1.15V for a 600V device.
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Phase Control Thyristor

They use amplifying gate thyristor.

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Also called inverter thyristors. Used for high speed switching applications. Turn-off time tq in the range of 5 to 50sec. On-state voltage drop of typically 1.7V for 2200A, 1800V thyristor. High dv/dt and high di/dt rating.

Fast Switching Thyristors

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Bidirectional Triode Thyristors (TRIAC)

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Triac Characteristics

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Gate Turn-off Thyristors

Turned on by applying positive gate signal. Turned off by applying negative gate signal. On state voltage is 3.4V for 550A, 1200V GTO. Controllable peak on-state current ITGQ is the peak value of on-state current 35 which can be turned-off by gate

Advantages over SCRs

Elimination of commutating components. Reduction in acoustic & electromagnetic noise due to elimination of chokes. Faster turn-off, therefore can be used for higher switching frequencies. Improved efficiency of converters.
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Advantages over BJTs

Higher voltage blocking capabilities. High on-state gain. High ratio of peak surge current to average current. A pulsed gate signal of short duration only is required.
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Disadvantages of GTOs

On-state voltage drop is more. Due to multi cathode structure higher gate current is required. Gate drive circuit losses are more. Reverse blocking capability is less than its forward blocking capability.
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Reverse Conducting Thyristors

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Anti-parallel diode connected across SCR on the same silicon chip. This diode clamps the reverse blocking voltage to 1 or 2V. RCT also called Asymmetrical Thyristor (ASCR). Limited applications.
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Static Induction Thyristors

Turned-on by applying positive gate voltage. Turned-off by applying negative gate voltage. Minority carrier device. Low on-state resistance & low voltage drop. Fast switching speeds & high dv/dt &41 high di/dt capabilities.

Switching time in order of 1 to 6 sec. The rating can go upto 2500V / 500A. Process sensitive.

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Turned-on by direct light radiation on silicon wafer. Gate structure is sensitive for triggering from practical light sources. Used in high voltage and high current applications. Example: HVDC transmission, Static reactive power 43 compensation.

Light-Activated Silicon Controlled Rectifiers

Offers complete electrical isolation between light triggering source & power circuit. Rating could be has high as 4KV / 1500A. di/dt rating is 250A / sec. dv/dt rating is 2000V / sec.
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Combines a MOSFET & a thyristor in parallel as shown. High switching speeds & high di/dt & dv/dt.

FET Controlled Thyristors

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Turned on like conventional thyristors. Cannot be turned off by gate control. Application of these are where optical firing is to be used.

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New device that has become commercially available. Basically a thyristor with two MOSFETs built in the gate structure. One MOSFET for turning ON the MCT and the other to turn OFF the MCT.

MOS-Controlled Thyristor

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Structure

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Equivalent Circuit
Anode D n
+

p p
+

G a te (G ) M 2 O FF -FE T S n Q1 n C a th o d e
+

n n Q2 D p
-

M 1 O N -FE T

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Features

Low on-state losses & large current capabilities. Low switching losses. High switching speeds achieved due to fast turn-on & turn-off. Low reverse blocking capability.
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Gate controlled possible if current is less than peak controllable current. Gate pulse width not critical for smaller device currents. Gate pulse width critical for turn-off for larger currents.

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MOSFET

52 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT

Semiconductor Crosssection of IGBT

53 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT

IGBT

54 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT

Advantages of IGBT
Combines the advantages of BJT & MOSFET High input impedance like MOSFET Voltage controlled device like MOSFET Simple gate drive, Lower switching loss Low on state conduction power loss like BJT Higher current capability & higher switching speed than a BJT. ( Switching speed lower MOSFET) Prof. M. Madhusudhan Rao, than E&C Dept., MSRIT

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Applications of IGBT

ac and dc motor controls. General purpose inverters. Uninterrupted Power Supply (UPS). Welding Equipments. Numerical control, Cutting tools. Robotics & Induction heating.
56 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT

Devices

SITH = Static Induction Thyristor GTO = Gate Turn Off Thyristor MOS = Metal Oxide Semiconductor MCT = MOS Controlled Thyristor MTO = MOS Turn Off Thyristor ETO = Emitter Turn Off Thyristor IGCT = Insulated Gate Controlled Thyristor TRIAC = Triode Thyristor LASCR = Light Activated SCR

Devices..

NPN BJT = NPN Bipolar Junction Transistor IGBT = Insulated Gate Bipolar Junction Transistor N-Channel MOSFET = N-Channel Metal Oxide Silicon Field Effect Transistor SIT = Static Induction Transistor RCT = Reverse Conducting Thyristor GATT = Gate Assisted Turn Off

Power Semiconductor Devices, their Symbols & Characteristics

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DEVICE SYMBOLS & CHARACTERISTICS

60 Prof. M. Madhusudhan Rao, E&C Dept., MSRIT

61

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Line Commutated Thyristors available up to 6000V, 4500A. Ex: Converter grade (line commutated) SCR. V / I rating: 5KV / 5000A Max. Frequency: 60Hz. Switching time: 100 to 400sec. On state resistance: 0.45m.
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Comparison between different commonly used Thyristors

Example of Inverter Grade Thyristor Ratings

V / I rating: 4500V / 3000A. Max. Frequency: 20KHz. Switching time: 20 to 100sec. On state resistance: 0.5m.

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Example of Triac Ratings

Used in heat / light control, ac motor control circuit V / I rating: 1200V / 300A. Max. Frequency: 400Hz. Switching time: 200 to 400sec. On state resistance: 3.6m.
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Example of Power Transistor Ratings

PT ratings go up to 1200V / 400A. PT normally operated as a switch in CE config. Max. Frequency: 400Hz. Switching time: 200 to 400sec. On state resistance: 3.6m.
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Example of Power MOSFET Ratings

Used in high speed power converters like inverters & choppers. Ratings up to 1000V / 100A. Example: MOSFET 800V / 7.5A rating. Max. Frequency: 100KHz. Switching time: 1.6sec. On state resistance: 1.2m.
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Example of IGBT Ratings

Used in high voltage / current & high frequency switching power applications (Inverters, SMPS). Example: IGBT 2500V / 2400A. Max. Frequency: 20KHz. Switching time: 5 to sec. On state resistance: 2.3m.
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IGM w IG rp o n s x q y z 1 3 4Load line m VG VGD FIGURE 18.2 Typical gate characteristics of an SCR.

Photo-SCR coupled isolator

Short pulse

Long pulse

Pulse train generator

Pulse train with timer and AND gate

Gate Triggering Methods

- Efficient & reliable method for turning on SCR. Types

R - Triggering. RC - Triggering. UJT - Triggering.

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R-Triggering
O

a i R

LO AD
1

vS= V

s in t
D

Resistance firing circuit

76

RC Triggering
v
O

LO A D

+ R D
2

V 1

v S= V

s in t
V
C

RC half-wave trigger circuit

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Gate triggering characteristics

Gate protection circuit

Gate input characteristics

High temperature due to:

Snubber

Trajectory comparision with and without capacitor

Turn off snubber circuit