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A Presentation on

PFRAM (Polymer memory)


Submitted by:
Nitin Rohilla (Roll no - 10128)

Introduction
Search for new memories that delivers
Density
Speed Non-volatile

Endurance
Embeddability Scalability

Emerging memories

Polymer memory
Ovonic unified memory Magnetic random access memory

Features of Polymer Memory


Data stored by changing the polarization of the

polymer. Zero transistor per bit storage. Memory is non-volatile. Faster then nor and nand flash. Easily integrate with CMOS. Operational temperature range between 40 to 110C .

Polymer Memory Principle


Polymer Memory utilizes the effect of electrical bi-

stability. When electric field is applied across the structure there is change in the resistance. The ratio of change in the resistance is about 10 After turn off the device remains stable in one of the two states.

What is Ferro electricity?


Ferroelectric material exhibit spontaneous polarization with applied electric field due to atomic displacement of body centered atom in the perovskite(ABO3) structure. The remenant polarization is maintained after the removal of electric field.

How it works

Image

Sound Everything is stored as stream of ones and zeros Information

How it works contd.

Device Device Structure Structure


Substrate

(SiO2/glass or SiO2/Si )

Electrode Substrate

Sputtering Method Polymer Electrode Substrate

Metal Deposition Electrode Polymer Electrode Substrate

Spin coating

Advantages of Polymer Memory


Polymer layers can be easily stacked. This enables to achieve very high density. Very low cost per bit. Easily manufacture-use of printers to spray liquid polymers. Low power consumption Fast read write speed. It requires 0.5 million of transistors per gigabit of memory whereas silicon based system requires 1.5 to 6.5 billions transistors for same gigabits

Key Advantage of PFRAM

Performance Parameters

On/off current ratio.


Switching (writing and erasing) time. Stability under voltage stress.

Stability under read pulse.


Long term stability.

On/off current Ratio

Value of on/off current ratio is 105

Switching time

Value of Switching time is 80s

Stability under constant voltage stress

Value of Switching time is 80s

Long term stability

Value of Switching time is 80s

Temprature stability

Comparison between different Memory Technology

Advantages of Polymer Memory


Polymer layers can be easily stacked. This enables to

achieve very high density. Very low cost per bit. Easily manufacture-use of printers to spray liquid polymers. Low power consumption. Fast read write speed. It requires 0.5 million of transistors per gigabit of memory whereas silicon based system requires 1.5 to 6.5 billions transistors for same gigabits

Limitations of Polymer Memory


Polymer materials are not as stable as silicon

especially under at high temperature environment Destructive read. Limited read and write endurance. Parasitic currents in passive array can effect reading and programming processes.

Addressing the right cell

Cross-point detection appears the simplest approach, but Parasitic path exist through neighboring cells Some selector is needed to stop parasitic path

Applications

Progressively unlock new markets

Conclusion

Thanks