Under the guidance of By AJAY KUMAR

N.S
Lect. Ms. VIDYA DEVI .M (1BY05EC003)

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MOORE’S LAW.
FUNDAMENTAL CIRCUIT ELEMENTS.
THE MISSING ELEMENT.
 HP’s INVENTION.
OTHER SIMILAR INVENTIONS.
HYBRID CHIPS.
MEMRISTENCE IN SPINTRONICS .
 POTENTIAL FIELDS.
CONCLUSION.

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Silicon ICs Status And Trends

 MOORE’S LAW:
The number of transistors that can be placed inexpensively on
an integrated circuit has increased exponentially, doubling
approximately every two years.
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FUNDAMENTAL CIRCUIT
ELEMENTS :

Leon Chua suspected that a memristor should exist based primarily

on symmetry.
There are four fundamental circuit variables: electric current,
voltage, charge, and magnetic flux. For these variables, we have
resistors to relate current to voltage, capacitors to relate voltage to
charge, and inductors to relate current to magnetic flux,
 We are missing one to relate charge to magnetic flux, so the
concept of memristor comes in. 4
Proof :
 Integral of current is charge dq/dt = I (amperes)

 Integral of voltage is flux dΦ/dt = V (volts)

 Resistor dv = R di , dv/di = R
(ohms)

 Capacitor dq = C dv , dq/dv = C
(farad)

 Inductor dΦ = L di , dΦ/di = L (henry)

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The missing element :

Φ~q

MEMRISTOR
MEM – memory,
RISTOR - resistor

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Analogous understanding of
Memristance:
Pipe

Water
Water

 A common analogy for a resistor is a pipe that carries water.

 The water itself is analogous to electrical charge.
 The pressure at the input of the pipe is similar to voltage.
 The rate of flow of the water through the pipe is like electrical
current.
 Just as with an electrical resistor, the flow of water through the
pipe is faster if the pipe is shorter and/or it has a larger diameter.
 An analogy for a memristor is an interesting kind of pipe that
expands or shrinks when water flows through it. 
 If water flows through the pipe in one direction, the diameter of the
pipe increases, thus enabling the water to flow faster. If water
flows through the pipe in the opposite direction, the diameter of
the pipe decreases, thus slowing down the flow of water.
 If the water pressure is turned off, the pipe will retain its most
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recent diameter until the water is turned back on. Thus it
hp's
answer :
 The Memristor team of HP on 30th April 2008
devised a modeled which was claimed to be the
missing element.
 The team was lead by Stanley Williams, Director
of the IQSL (information & quantum systems
lab),the members include :
*Dmitri B. Strukov
*Gregory S. Snider
*Duncan R. Stewarty

 Crossbar latch 2005

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 Crossbar latches

 crossbar latches can be used to perform

calculations.

Crossbar latches consists of a grid of

microscopic wires linked by molecules at their
intersections.

Are smaller, potentially cheaper to make.

A crossbar latch consists of three wires a "latch" wire and two control or clock wires.
*The latch wire lies under the other two.
*The wires are connected by molecules which transfer electrical impulses from one
wire to the next.

 A series of electrical impulses will close the molecular switch between the latch wire
and the first clock wire, the impulses will then open the switch between the latch
wire and other clock wire.

A computer interprets this action as a "0“ while opening the first switch and closing
the second becomes a "1." 9
Crossbar
cont..
 The junction between the wires is small = 2 nanometers.
 The equivalent junction in current transistors inside 90-
nanometer chips is about 60 nanometers.
 Many crossbar latches can be put into the same space that
now transistors hold , traditional transistors will never hit
these limits .
 Shrinking the electrical junctions in a chip increases
performance.
 The wires are put into place through nano-imprint
lithography.
 A customized mold is placed into a film later & the imprints
left by the mold become the templates for the wires.
 The molecular switches do not have to be placed
individually at the juncture of the wires , Only the wires at
the junctions will carry a current & all of the other
molecules are left unused.
 Drawback 10
 Memristor
:

The wires in this image are 50 nanometers wide, which comes to about 150 atoms..
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Memristor
cont..
The HP device is composed of a thin (50 nm) titanium dioxide film between
two 5 nm thick electrodes, one Ti the other Pt.
Initially, there are two layers to the titanium dioxide film, one of which has a
slight depletion of oxygen atoms. The oxygen vacancies act as carriers
meaning that the depleted layer has a much lower resistance than the non-
depleted layer.
When an electric field is applied, the oxygen vacancies drift changing the
boundary between the high-resistance and low-resistance layers.
 When a current is applied (through the wire) to the upper layer, the vacancies
are pushed into the lower level of titanium dioxide. This changes the
resistance of the lower level.
 Thus the resistance of the film as a whole is dependent on how much charge
has been passed through it in a particular direction, which is reversible by
changing the direction of current.
 It is considered a nanoionic device.
Memristance is displayed only when both the doped layer and depleted layer
contribute to resistance. When enough charge has passed through the
memristor that the ions can no longer move, the device enters hysteresis.

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Cont..
An atomic force microscope view of a
circuit with 17 memristors.

 Ion mobility of 10−10 cm2/(V·s) the highest known drift ionic mobilities occur in
advanced superionic conductors, such as rubidium silver iodide with about
2×10−4 cm2/(V·s) conducting silver ions at room temperature.

 Electrons and holes in silicon have a mobility ~1000 cm2/(V·s).

 A relatively low bias of 1 volt can be used

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Proof :
 V = R (w) * I w = internal state
dw/dt = f ( w, i )
 Physical model
R(w) = { [w(t) * Ron ]+ (1-w(t))Roff }
where w = 0 , Roff
w = 1 , Ron
 dw/dt = (Ron / β ) * i(t) ………
…………(1)
β = magnetic flux in weber
v(t) = { [w(t) * Ron ]+ (1-w(t))Roff } * i(t)
let r = Roff/Ron = resistance ratio
 Rearranging , v(t) = β{x(t) + r[1 − x(t)]} * dw(t)/dt
by integrating , ϕ = β{−[(r − 1)/2 ]*(w^2) + r *w + c] ……
……………(2)
c = constant of integration
ϕ = quadratic function of charge.
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Memristance eq.

 Writing eq (1) in physical parameters

[dx(t)/dt]/D = [μV * Ron * i(t) ] / D^2
where x(t) = co-ordinate of the
boundary
D = thickness of the film
μV = avg ion mobility
integrating, [x(t)/D ] = { μV* Ron* q(t) } / D^2
 using in eq (2)
ϕ = −[(Ron * μV)/2*D^2]{Roff/Ron− 1}q^2 + Roff
*q
if Roff ≫ Ron,
 memristance , M(q) ≡ dϕ/dq
= Roff {1 −(μV *Ron *q)/D^2}

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Other Players:
Intel &
IBM microelectronics
 Racetrack memories  PCM chips
*Phase change
memory
*a bit on a substrate
similar to discs is
heated, on cooling,
bits
attain variable
resistances
representing various
data.
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 IBMrepresented
*Data cont.. by blue and red segments, is collected on a
nanowire. It then passes through a reader that delivers the
information to a computer.
* The information stream on the wire can be moved back and
forth. In existing memory, data sits in a fixed spot.
* The wire concept could allow memory makers to increase the
density of memory chips. Data can also be erased and re-
recorded on the tracks.

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SPINTRONICS

 Spintronics is the use of electron spin

to store information.
 Electrons can spin in two ways up or down
* each spin has different energy
* magnetic field affects the spins
 Memristors are expressed as :

 Three examples of spintronic devices: 18

 (1) MTJ
spintronics
G0 = MTJ conductance when the
free-layer magnetization
direction is perpendicular to the
reference-layer magnetization
Direction.
Tunneling magneto resistance
(TMR)
=ratio of the difference between high
and low conductance to low
conductance.
High conductance corresponds to
the case of free-layer magnetization
parallel to pinned-layer
magnetization & low conductance
corresponds to the case of free-
layer magnetization antiparallel to
pinned-layer magnetization.
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(a) Variation of resistance, voltage wrt time.
(b) Variation of current wrt voltage.

(2) Thin film (3)Spin valve

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Hybrid chips :

Combination of transistors and memristors

Less heat generation
More logic gates per unit area of chip
Low power comsumption

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Potentials
:
 Possible Replacement for D-RAM
* A computer memory that can supplement today's
commonly used dynamic random access memory (D-RAM).
Computers using conventional D-RAM lack the ability to
retain information once they are turned off. When power is
restored to a D-RAM-based computer, a slow, energy-
consuming "boot-up" process is necessary to retrieve data
stored on a magnetic disk required to run the system.
 Pattern recognition
* Recently, a simple electronic circuit consisting of an LC
contour and a memristor was used to model experiments on
adaptive behavior of unicellular organisms. It was shown
that the electronic circuit subjected to a train of periodic
pulses learns and anticipates the next pulse to come
,similarly to the behavior of slime molds Physarum
polycephalum subjected to periodic changes of
environment . Such a learning circuit may find applications
in pattern recognition. 22
Conclusion
 Problem addressed
*The problem of heat generation due to higher
densities that also defects and affects the basic
physics of the devices.
 Market addressed
* Semiconductor Industries
* Data Storage Devices

 Researchers believe that

memristors can one day
synthesize the human
brain’s pattern.

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Thanks are due to
:-
Bmsit library for ieee papers.
Friends for other info.
Technical FAQ by Memristor lead scientist, Stan
Williams of HP Labs.
 "Talk of the Nation" interview with co-discover
Stan Williams.
HP Reveals Memristor, The Fourth Passive Circuit
Element.
 BBC News - Electronics' 'missing link' found.
Scribd.com
Springer.com
Google.com
Cuil.com

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? ??

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Thank you for patient listening at this hour ;-)

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