Unit 1

UNIT I
Power Semiconductor
Devices
EE2301-POWER ELECTRONICS
Introduction
What are Power Semiconductor Devices (PSD)?
They are devices used as switches or rectifiers in
power electronic circuits

What is the difference of PSD and low-power
semiconductor device?
Large voltage in the off state
High current capability in the on state

Classification
Fig. 1. The power semiconductor devices family
Important Parameters
Breakdown voltage.
On-resistance.
Trade-off between breakdown voltage and
on-resistance.
Rise and fall times for switching between on
and off states.
Safe-operating area.
Power MOSFET: Structure
Power MOSFET has much higher current handling capability in
ampere range and drain to source blocking voltage(50-100V)
than other MOSFETs.
Fig.2.Repetitive pattern of the cells
structure in power MOSFET

Power MOSFET: R-V Characteristics
An important parameter of a power MOSFET is on resistance:

, where
on S CH D
R R R R = + +
( )
CH
n ox GS T
L
R
W C V V
=
Fig. 3. Typical R
DS
versus I
D
characteristics of a MOSFET.
Thyristor: Structure
Thyristor is a general class of a four-layer pnpn
semiconducting device.
Fig.4 (a) The basic four-layer pnpn structure.
(b) Two two-transistor equivalent circuit.
Three States:
Reverse Blocking
Forward Blocking
Forward Conducting

Thyristor: I-V Characteristics
Fig.5 The current-voltage
characteristics of the pnpn device.
Applications
Power semiconductor devices have widespread
applications:
Automotive
Alternator, Regulator, Ignition, stereo tape
Entertainment
Power supplies, stereo, radio and television
Appliance
Drill motors, Blenders, Mixers, Air conditioners
and Heaters
Thyristors
Most important type of power
semiconductor device.
Have the highest power handling
capability.they have a rating of 1200V /
1500A with switching frequencies ranging
from 1KHz to 20KHz.
Is inherently a slow switching device
compared to BJT or MOSFET.
Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.
Different types of Thyristors
Silicon Controlled Rectifier (SCR).
TRIAC.
DIAC.
Gate Turn-Off Thyristor (GTO).
SCR

Symbol of
Silicon Controlled
Rectifier
Structure
}
}
}
}
Gate Cathode
J
3
J
2
J
1
Anode
10 cm
17 -3
10 -5 x 10 cm
13 14 -3
10 cm
17 -3
10 cm
19 -3
10 cm
19 -3
10 cm
19 -3
n
+
n
+
p
-
n
p
p
+
10 m
30-100 m
50-1000 m
30-50 m
Device Operation

Simplified model of a
thyristor
V-I
Characteristics
Effects of gate current
Two Transistor Model of SCR

( ) ( )
1 1
1 1
1 1
1
1
Considering PNP transistor
of the equivalent circuit,
, , ,
,
1 1
E A C C
CBO CBO B B
B A CBO
I I I I
I I I I
I I I
o o
o
= = =
= =
=
( ) ( )
2 2 2
2 2
2 2
2
2
Considering NPN transistor
of the equivalent circuit,
, ,
2
C C B B E K A G
C k CBO
C A G CBO
I I I I I I I I
I I I
I I I I
o
o
= = = = +
= +
= + +
( )
2 1
2 1 2
1 2
From the equivalent circuit,
we see that
1
C B
g CBO CBO
A
I I
I I I
I
o
o o
=
+ +
=
+
( )
1 2
1 2
Case 1: When 0
1
g
CBO CBO
A
I
I I
I
o o
=
+
=
+
( )
2 1 2
1 2
Case 2: When 0
1
G
g CBO CBO
A
I
I I I
I
o
o o
=
+ +
=
+
Turn-on
Characteristics
on d r
t t t = +
Turn-off
Characteristi
c
Anode current
begins to
decrease
t
C
t
q
t
t
Commutation
di
dt
Recovery Recombination
t
1
t
2
t
3
t
4
t
5
t
rr
t
gr
t
q
t
c
V
AK
I
A
t
q
=device off time
t
c
=circuit off time
Methods of Thyristor Turn-on
Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
Thyristor Types
Phase-control Thyristors (SCRs).
Fast-switching Thyristors (SCRs).
Gate-turn-off Thyristors (GTOs).
Bidirectional triode Thyristors (TRIACs).
Reverse-conducting Thyristors (RCTs).
Static induction Thyristors (SITHs).
Light-activated silicon-controlled rectifiers
(LASCRs).
FET controlled Thyristors (FET-CTHs).
MOS controlled Thyristors (MCTs).

Phase Control Thyristor
These are converter thyristors.
The turn-off time t
q
is in the order of 50 to
100sec.
Used for low switching frequency.
Commutation is natural commutation
On state voltage drop is 1.15V for a 600V
device.
They use amplifying gate thyristor.
Fast Switching
Thyristors
Also called inverter thyristors.
Used for high speed switching applications.
Turn-off time t
q
in the range of 5 to 50sec.
On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
High dv/dt and high di/dt rating.
Bidirectional Triode
Thyristors (TRIAC)
Mode-I
Operation
MT2 Positive,
Gate Positive
P
1
N
1
N
2
P
2
Ig
Ig
MT
2
(+)
MT
1
( )
G
V
(+)
Mode-II
Operation
MT2 Positive,
Gate Negative
P
1
N
1
N
2
N
3
P
2
Ig
MT
2
(+)
MT
1
( )
G
V
Final
conduction
Initial
conduction
Mode-III Operation
MT2 Negative,
Gate Positive
P
1
N
1
N
4
N
2
P
2
Ig
MT
2
( )
MT
1
(+)
G
(+)
Mode-IV Operation
MT2 Negative,
Gate Negative
P
1
N
1
N
4
P
2
Ig
MT
2
( )
MT
1
(+)
N
3
G
(-)
Triac Characteristics
BJT structure
note: this is a current of electrons (npn case) and so the
conventional current flows from collector to emitter.
heavily doped ~ 10^15
provides the carriers
lightly doped ~ 10^8 lightly doped ~ 10^6
BJT characteristics
BJT characteristics
BJT modes of operation

Mode

EBJ

CBJ
Cutoff Reverse Reverse
Forward
active
Forward Reverse
Reverse
active
Reverse Forward
Saturation Forward Forward
Cutoff: In cutoff, both junctions reverse biased. There is very little current flow, which
corresponds to a logical "off", or an open switch.

Forward-active (or simply, active): The emitter-base junction is forward biased and the
base-collector junction is reverse biased. Most bipolar transistors are designed to afford the
greatest common-emitter current gain, f in forward-active mode. If this is the case, the
collector-emitter current is approximately proportional to the base current, but many times
larger, for small base current variations.

Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the
forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the
emitter and collector regions switch roles. Since most BJTs are designed to maximise
current gain in forward-active mode, the f in inverted mode is several times smaller. This
transistor mode is seldom used. The reverse bias breakdown voltage to the base may be an
order of magnitude lower in this region.

Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates
current conduction from the emitter to the collector. This mode corresponds to a logical
"on", or a closed switch.

BJT modes of operation
BJT structure (active)
current of electrons for npn transistor

conventional current flows from
collector to emitter.
B
C
E
I
E
I
C
I
B
-
+
V
BE
V
CB
-
+
+ - V
CE
A GATE electrode is placed above (electrically insulated
from) the silicon surface, and is used to control the
resistance between the SOURCE and DRAIN regions
NMOS: N-channel Metal
Oxide Semiconductor
L
L = channel length
Metal (heavily
doped poly-Si)
W
W = channel width
MOSFET
SOURCE
DRAIN
GATE
Without a gate-to-source voltage applied, no current can
flow between the source and drain regions.
Above a certain gate-to-source voltage (threshold
voltage V
T
), a conducting layer of mobile electrons is
formed at the Si surface beneath the oxide. These
electrons can carry current between the source and drain.
N-channel MOSFET
n
p
oxide insulator
gate
n
Drain
Source
Gate
I
D
I
G
I
S
N-channel vs. P-channel
MOSFETs
For current to flow, V
GS
> V
T
Enhancement mode: V
T
> 0
Depletion mode: V
T
< 0
Transistor is ON when V
G
=0V
p-type Si
n+ poly-Si
n-type Si
p+ poly-Si
NMOS PMOS
n+ n+ p+ p+
For current to flow, V
GS
< V
T
Enhancement mode: V
T
< 0
Depletion mode: V
T
> 0
Transistor is ON when V
G
=0V
(n+ denotes very heavily doped n-type material; p+ denotes very heavily doped p-type material)
MOSFET Circuit Symbols
p-type Si
n+ poly-Si
NMOS
n+ n+
n-type Si
p+ poly-Si
PMOS
p+ p+
G
G
G
G
S
S S
S
Body
Body
The voltage applied to the GATE terminal determines whether
current can flow between the SOURCE & DRAIN terminals.
For an n-channel MOSFET, the SOURCE is biased at a lower
potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when V
G
> V
T
)
For a p-channel MOSFET, the SOURCE is biased at a higher
potential (often the supply voltage V
DD
) than the DRAIN
(Holes flow from SOURCE to DRAIN when V
G
< V
T
)

The BODY terminal is usually connected to a fixed potential.
For an n-channel MOSFET, the BODY is connected to 0 V
For a p-channel MOSFET, the BODY is connected to V
DD
MOSFET Terminals
V
GS

S
semiconductor
oxide
G
V
DS

+

+

D
always zero!
I
G

V
GS

The gate is insulated from the
semiconductor, so there is no
significant steady gate current.
I
G

NMOSFET I
G
vs. V
GS
Characteristic
Consider the current I
G
(flowing into G) versus V
GS
:
V
GS

S
semiconductor
oxide
G
V
DS

I
D

+

+

D
I
D

zero if V
GS
< V
T
V
DS

Next consider I
D
(flowing into D) versus V
DS
, as V
GS
is varied:
Below threshold (V
GS
< V
T
):
no charge no conduction
Above threshold (V
GS
> V
T
):
inversion layer of electrons
appears, so conduction
between S and D is possible
V
GS
> V
T

NMOSFET I
D
vs. V
DS
Characteristics
The MOSFET as a Controlled Resistor
The MOSFET behaves as a resistor when V
DS
is low:
Drain current I
D
increases linearly with V
DS
Resistance R
DS
between SOURCE & DRAIN depends on V
GS
R
DS
is lowered as V
GS
increases above V
T

NMOSFET Example:
I
D

I
DS
= 0 if V
GS
< V
T
V
DS

V
GS
= 1 V > V
T

V
GS
= 2 V
Inversion charge density Q
i
(x) = -C
ox
[V
GS
-V
T
-V(x)]
where C
ox
c
ox
/ t
ox
oxide thickness t
ox
I
D
vs. V
DS
Characteristics
The MOSFET I
D
-V
DS
curve consists of two regions:
1) Resistive or Triode Region: 0 < V
DS
< V
GS
V
T

2) Saturation Region:
V
DS
> V
GS
V
T

( )
ox n n
T GS
n
DSAT
C k
V V
L
W k
I
=
'

'
=
where
2
2
ox n n
DS
DS
T GS n D
C k
V
V
V V
L
W
k I
=
'
(

'
=
where
2
process transconductance parameter
CUTOFF region: V
G
< V
T
Part I: Bipolar Power Transistors
The Evolution Of IGBT
Bipolar Power Transistor Uses Vertical Structure For
Maximizing Cross Sectional Area Rather Than Using Planar
Structure
Emitter Base
Collector
P
N
+
N
-
N
+
Collector
Base
Emitter
Part II: Power MOSFET
Power MOSFET Uses Vertical Channel Structure Versus
The Lateral Channel Devices Used In IC Technology
n
+
P
n
-
P
n
-
n
+
SiO
2
Gate
Source
Drain
Gate
Source
Drain
Lateral MOSFET structure
Discrete BJT + Discrete Power MOSFET In Darlington
Configuration
E
NPN
N-MOSFET
G
B
S
D
C
Part III: BJT
(discrete)
+ Power MOSFET
(discrete)
Part IV: BJT
(physics)
+ Power MOSFET
(physics)
= IGBT
More Powerful And Innovative Approach Is To Combine
Physics Of BJT With The Physics Of MOSFET Within Same
Semiconductor Region

This Approach Is Also Termed Functional Integration Of
MOS And Bipolar Physics

Using This Concept, The Insulated Gate Bipolar Transistor
(IGBT) Emerged

Superior On-State Characteristics, Reasonable Switching
Speed And Excellent Safe Operating Area
IGBT Fabricated Using Vertical Channels (Similar To Both
The Power BJT And MOSFET)
n
+
n
-
- drift
p
+
p - base
p
+
- substrate
Emitter
Gate
Collector
E
PNP
NPN
N-MOSFET
G
C
Part IV: BJT
(physics)
+ Power MOSFET
(physics)
= IGBT
Device Operation
Operation Of IGBT Can Be Considered Like A PNP
Transistor With Base Drive Current Supplied By The
MOSFET
DRIVER CIRCUIT (BASE / GATE)
Interface between control (low power electronics) and (high power) switch.

Functions:
amplifies control signal to a level required to drive power switch

provides electrical isolation between power switch and logic level

Complexity of driver varies markedly among switches. MOSFET/IGBT drivers
are simple but GTO drivers are very complicated and expensive.
ELECTRICAL ISOLATION FOR DRIVERS
Isolation is required to prevent damages on
the high power switch to propagate back to
low power electronics.

Normally opto-coupler (shown below) or high
frequency magnetic materials (as shown in
the thyristor case) are used.

ELECTRICAL ISOLATION FOR DRIVERS
Power semiconductor devices can be categorized into 3
types based on their control input requirements:

a) Current-driven devices BJTs, MDs, GTOs
b) Voltage-driven devices MOSFETs, IGBTs, MCTs
c) Pulse-driven devices SCRs, TRIACs

CURRENT DRIVEN DEVICES (BJT)
Power BJT devices have low current gain due to
constructional consideration, leading current than would
normally be expected for a given load or collector current.
The main problem with this circuit is the slow turn-off time.
Many standard driver chips have built-in isolation. For
example TLP 250 from Toshiba, HP 3150 from Hewlett-
Packard uses opto-coupling isolation.
ELECTRICALLY ISOLATED DRIVE CIRCUITS
EXAMPLE: SIMPLE MOSFET GATE DRIVER
Note: MOSFET requires V
GS
=+15V for turn on and 0V to
turn off. LM311 is a simple amp with open collector
output Q
1
.

When B
1
is high, Q
1
conducts. V
GS
is pulled to ground.
MOSFET is off.

When B
1
is low, Q
1
will be off. V
GS
is pulled to V
GG
. If
V
GG
is set to +15V, the MOSFET turns on.

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