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A step towards quantum computers By Shashank Shetty

Index:
Introduction
Construction Working

Magnetic sensitivity
Temperature effects Applications Advantages Conclusion

Introduction:

Its a spintronics device. Conduction is due to spin polarization of electronics. Two experiments in 1920s suggested spin as an additional property of an electron: 1. Closely spaced splitting of hydrogen spectralines 2. Stern-Gerlach experiment

The starting material for both emitter and collector is a 380um, 5-10Ocm, n-si (100) wafer.

Wafer is dry oxidised to anneal the implant and to form a SIO2 layer.

The hydrophobic surface of emitter is contacted to the multilayer surface, forming a bond through spontaneous adhesion.

Base multilayer is rf sputtered through a laser cut metal shadow mask on the collector surface.

Working

Working(contd..)
The collector barrier height about 0.7eV while the emitter barrier height is 0.6eV. After accelerating the electrons from emitter they constitute a hot Ballistic electrons in the base. Current gain is given by, o = (Jc Jleak ) / Je = c e qm e-w/y where, e = emitter efficiency c = collector efficiency

Working(contd..)
qm = quantum mechanical transmission
W = base width = the hot electron mean free path

e-w/= the probability of transmission of the hot electrons through the base
Jc =the total collector current

Jleak = the collector leakage current


Je=the injected emitter current

Working(contd..)
Collector current is given by

Jc = Jc+ + Jc- = Jc c e qm [ Pi+ + Pi-] + Jleak i i The sum of the transmission probability factors for the two spin channels can be written as = [ Pi+ + Pi- ] = e-wcu / cu [e-wco / co i i e-wF/N / F/N + e-wco / co e-wF/N / F/N]

Working(contd..)
At the coercive field, this quantity becomes.

= [ Pi+ + Pi- ] AP = e-wcu / cu [2e-wco /2co i i e-wF/N / 2F/N e-wco / 2co e-wF/N / 2F/N]

Wco=the sum of all Co layer widths Wcu=the total Cu thickness. exp. (-WF/N /F/N()), a spin dependent factor which takes into account the spin dependent scattering at the interfaces.

MAGNETIC SENSITIVITY

The leakage current is quiet large (30A) and exceeds the magneto current for an injection current of 100mA because of low barrier height and large collector area. To reduce the leakage current to acceptible value, Magneto current measurements have been performed at 77 K.

MAGNETIC SENSITIVITY(CONTD..)

Magnetic sensitivity of collector current at different temperatures

Temperature effects
The collector current across the spin valve changes its relative orientation of magnetic movements at finite temperature. The parallel collector current is increasing up to 200 K and decreasing after that, while anti-parallel collector current is increasing up to room temperature.

Temperature effects(contd..)
Two different mechanisms are suggested. One of them is spatial distribution of Schottky barrier diode. This may explain the behaviors of both parallel and antiparallel collector current upto 200K. Spin mixing is spin flip process by thermal spin wave emission or absorption at finite temperatures.

Used

as stable, high sensitivity magnetic field sensors for automotive, robotic, mechanical engg. & data store application. as Magnetically Controlled Parametric Amplifier & Mixer.

Used

Used

as Magnetic Signal Processor, for control of brushless DC motors & as Magnetic logic elements. log applications they have the advantage over conventional semiconductor chips. in Quantum computing.

In

Used

Advantages
Traditional transistors use on & off charge currents

to create bits. Quantum spin field effect transistor will use up & down spin states to generate the same binary data
A currently logic is usually carried out using

conventional electrons, while spin is used for memory. Spintronics will combine both.

Advantages(contd..)
In most Semi Conducting transistors the relative

proportion of the up & down carries types are equal. If Ferro Magnetic material is used as the carrier source then the ratio can be deliberately skewed in one direction. Amplification and / or switching properties of the Device can be controlled by the external magnetic field applied to the device. Spin current releases heat but it is rather less.

Spin valve transistor is more versatile and more robust. Implementing it on a whole circuit will require some clever ideas as controlling the spin remains the greatest hurdle. However the key question will be whether any potential benefit of such technology will be worth the production cost.

QUESTIONS??

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