ESD Suppression

Overview:

Introduction/Circuit Protection Voltage Transients - Emphasis on ESD ESD Suppression Technologies Usage of ESD Suppressors - In Applications Board Layout Considerations

Circuit Protection Overview

CIRCUIT PROTECTION

OVERCURRENT PROTECTION

OVERVOLTAGE PROTECTION

Circuit Protection Comparison

Fuses/PTCs
Series devices that open to break overload currents.
Digital Waveform ESD Pulse

Power Input

Power Source
Fault Current

Fuse/PTC

Circuitry
ESD Suppressor

Signal Input

Littelfuse ESD Suppressors

Parallel devices that shunt damaging transients to ground.

What is an Electrical Transient?

A sudden change in the electrical condition of any circuit will cause a transient voltage to be generated from the energy stored in circuit capacitance and inductance. Effective transient overvoltage protection requires that the impulse energy be dissipated in the added suppressor at a voltage low enough to ensure survival of the circuit components.

Examples of Voltage Transients

ESD (Electro-Static Discharge) Lightning Strike Inductive Load Switching Commutative Spikes Automotive Load Dump

Did You Know?.

75% of field equipment failure are caused by Electrical Over-Stress (EOS)!!! Semiconductor devices are becoming increasingly Intolerant to voltage transients

A Lightning strike several miles away can induce transients in your equipment
Power distribution transformers susceptibility impacts clean power condition ESD failures can occur in CMOS at 2kV common, where as most EOS occurrences are at 8kV or higher

Where is Transient Protection Needed?

EMC REQUIREMENTS ESD EFT SURGES TELECOM EQUIPMENT

AUTOMOTIVE ISO 7637 GM 9105 LOAD DUMP PROTECTION OF INDUCTIVE LOADS TRANSIENT BURSTS

Suppression
WHITE GOODS

LINE TRANSFORMER PROTECTION LIGHTNING

INDUSTRIAL PANELS

TVSS APPLICATIONS UL 1449, BSS 587 ANSI C62.1

PORTABLE ELECTRONIC EQUIPMENT ESD

What is ESD (ElectroStatic Discharge)?

DEFINITION: The rapid transfer of electrostatic charge between objects. Discharges below 3,000V are usually not perceived by humans Discharges can exceed 15,000V Not lethal to humans, but can damage or kill electronic devices during production or in the field ESD exists EVERYWHERE

Standards Specific to ESD

IEC 61000-4-2
Most commonly referenced CE Marking certifies compliance to testing within 61000-4-2 Most severe, in terms of Current delivered to DUT

Contact Discharge 2,000 V 4,000 V 6,000 V 8,000 V

Level 1 Level 2 Level 3 Level 4

Air Discharge 2,000 V 4,000 V 8,000 V 15,000 V

Pass is achieved if system suffers no upset or damage 10 pulses are applied to the Device Under Test, in the polarity that the DUT is most sensitive to

ESD Waveform: IEC 61000 - 4 - 2

100% Severity Level 1 2 3 4

Discharge Voltage
2 kV 4 kV 6 kV 8 kV

Initial Current
7.5 A 15.0 A 22.5 A 30.0 A

30 ns 60 ns Current Current
4A 8A 12A 16A 2A 4A 6A 8A

Current (A)

30 ns Rise time = 0.7 to 1.0 ns

60 ns

Time (ns)

The human body is a good generator of ESD

The potential between a human body & an object can exceed 35,000 volts.

Typical ESD values

Means of Static Generation ESD @ 10 20% Relative Humidity ESD @ 65 90% Relative Humidity

Walking across carpet

35,000 V

1,500 V

Walking over vinyl floor

12,000 V

250 V

Worker at bench

6,000 V

100 V

Vinyl envelope Work chair padded with polyurethane

7,000 V

600 V

18,000 V

1,500 V

The Need for ESD Protection is Increasing

DEVICES ARE GETTING MORE SENSITIVE: SMALLER FEATURES, DENSER IC GEOMETRIES

Lower Operating Voltages Higher Operating Speeds Greater Functionality

ESD ACCOUNTS FOR 30% OF ALL FIELD FAILURES DEMANDING NEW STANDARDS LIMITATIONS OF EXISTING DEVICES

Adverse Effects of ESD Transients

SOFT FAILURE: Data corruption or system latch up. Reboot resolves the latch up temporary problem.

LATENT DAMAGE: IC still functional, but affected component will degrade with time or have shortened life span.

CATASTROPHIC FAILURE: Permanent damage done to structures within integrated circuitry (transistors and interconnects). Junction Burnout Oxide Punch-through Melted Trace

PERSONAL INJURY / STRUCTURAL DAMAGE / SYSTEM DESTRUCTION

Catastrophic ESD Failure Modes

Junction Burnout
Al E B C Alloy Spike Junction Short SiO2 Oxide Short

Oxide Punch-through

Transistors

Si

Dielectrics

Metallization Burnout
Al SiO2

Si

Interconnects

Failure Mechanisms in ICs

Dielectric breakdown Thermal breakdown Melting of metal layers
ESD does and will cause both latent and catastrophic failures in your unprotected end products. What are your customer return rates?

Parametric degradation

How to Achieve ESD Suppression

There are many approaches, the main ones include: Clamping devices Crowbar devices Filter circuits Isolation circuits

Clamping Devices
Transient Event Vline Vline Energy Dissipated Clamp Voltage

Clamping Suppression Devices: MOV, MLV, SP72X, PulseGuard

Crowbar Devices
Transient Event Vline Vline Reset Time

Trigger Voltage

Crowbar Suppression Device: e.g Surgector

Littelfuse ESD Suppression Solutions

PulseGuard (PG) Variable Voltage Polymer Material providing UltraLow Capacitance and variable form factors. Suitable for high-speed data protocol, such as USB 2.0, IEEE1394,Gigabit Ethernet, and Infiniband.

Multilayer Suppressors (ML, MLE, AUML) Surface mount chip devices for Surge protection / ESD protection Diode/SCR Array (SP 72X) - Avalanche Arrays (SP05X) Multiline Array TVS Diodes in IC and Chip Scale Packaging SurgeArray Suppressors (MLN) Multiline ESD protection array in ceramic chip package

Working Voltage
10,000 3,000

Suppression Portfolio Guide

BA/BB NA. & CA

LA, C-III, UltraMOV

300 AUML, ML, CH SGT 100 30 10 3 1 PG MA

ZA

SP72x SP05x PulseGuard

SP

SM-SGT

AUML, ML, CH MLE, MLN SurgeArray

MA

ZA

RA

RA

PA HA, HB34, DA/DB

BA/BB NA, CA

TMOV, UltraMOV, LA, C-III,

ESD / Comms / Low Voltage Suppression and Protection

Higher energy / AC Line / Industrial

HA, HB34, DA/DB

1,000

PA

Industrial / Base Stations Power Distribution / Power Transmission

Multi Layer Varistor (MLV)

Fired Ceramic End Termination

Metal Inner Electrodes

Intergranular Boundary (R=109, variable)
ZnO Grain R=1-10 (Zinc Oxide)

Multi Layer Varistor (MLV)

Nicknamed MLs or MLVs Leadless, Surface Mount Chip Form Combine Surge, ESD, and Filtering Functions Rugged, Robust, Reliable Three distinct versions: ML Series - supports the broadest application range MLE Series - intended for ESD while providing filter functions AUML Series - characterized for the specific transients found in automotive electronic systems

Multi Layer Varistor (MLV)

Designed for Low-Voltage DC Applications; 3.5V to 120V Applications can include: ML and MLE Series: Low Voltage, Board Level Products (Hand-Held/Portable devices, Computer/EDP, Instrumentation, Medical Electronics, etc.) AUML and ML Series: Automotive Electronics (Antilock brake systems, Wiper Modules, Airbag control systems, etc.) ML and MLE Series: Telecommunications Products (Cellular/Cordless Phones, Modems, Line Cards, etc.)

SurgeArray Multi Layer Network (MLN)

The network is a set of four independent multilayer varistors in a single surface mount package (1206). The extended voltage family now includes 5.5, 9, 14, 18 and 18 low capacitance (Product launching standard capacitance now). The inherent capacitance provides filtering capability to eliminate the need for an additional capacitor (450 - 45pF) Reduces board space and assembly placement cost while increasing assembly capacity and system reliability Direct upgrade for AVX(Multiguard) and Epcos(CA06 series)

SurgeArray

SurgeArray Multilayer Varistor Network

The SurgeArray network is a set of four independent Multilayer Varistors in a single surface mount package (1206).

SurgeArray Networks were designed to meet the needs of the Battery Operated, Portable / Handheld, Automotive, and Industrial Markets.
The SurgeArray network helps your customers meet mandatory EMC requirements by suppressing ESD, EFT and other potentially damaging transients either generated or experienced by their systems. The inherent capacitance of Littelfuses Multilayer Varistor Technology provides filtering capability to eliminate the need for an additional capacitors. SurgeArray networks increase component density, thus reducing board space, assembly placement costs, parts count, and system reliability Direct upgrade for AVX(Multiguard) and Epcos (CA06 series).

=
4 0603s = 1 SurgeArray MLV Network
not to scale

SP Series Diode/SCR Arrays The SP72X..A Family of Silicon Bipolar Diode / SCR IC Arrays Designed for Suppression of ESD and Other Transients !

SP Series Diode/SCR Arrays

Connect Input (IN) to Sensitive Line Needing Protection

Upper Pair: Clamps at 0.7Vabove V+

Lower Pair: Clamps at 0.7Vbelow V-

SP Series Diode/SCR Arrays

Low Capacitance ( 1-3pF ) Low Leakage ( <1nA ) Suited to Any Supply Voltage 1VDC to 35VDC ( 1 - 20V for the SP724) Clamps to +/- 0.7V of referenced voltage supplies Fast Response for ESD Standard Temperature Range of -40 to +105 deg C Multiple packages
SP720 - 14 lines: 16 pin DIP or SOP SP721 - 6 lines: 8 pin DIP or SOP SP723 - 6 lines: 8 pin DIP or SOP (extended surge) SP724 - 4 lines: 6 pin SOT23

SP Series Diode/SCR Arrays

Applications can Include: Data Lines ( Parallel Ports, I/O lines, High Speed Logic, Serial lines / USB, Switches ) Signal Lines ( Op Amps, Sensors, Comparators, A-D lines, Receiver / Transceivers ) Control Lines ( Motor, Alarms, Pumps, Robotics ) Discrete Component Input ( MOSFET, Drivers )

Surface Mount Avalanche Diode Arrays

Family of avalanche diode arrays designed and tested specifically for Transient Voltage Suppression (TVS) and EMC requirements. Targeting applications with working voltages of 5 volts and below, including 3.3V systems. Configured to protect 2, 3, 4, 5 and 6 data or signal lines in ultra small SOT-23, TSSOP and MSOP packages NAFTA represents 45% of world Avalanche Diode market making this a great play for North American Distribution Littelfuse TVS diode expansion continues with Chip Scale Packaging in June, and more Rail Clamps in July The new Avalanche family enhances our portfolio of the widest selection of TVS and ESD Technologies in the known Galaxy.
Europe27% Asia 28% $350M

Avalanche Diode Market Size

Total World Wide Avalanche Diode Avalanche Diode SAM

NAFTA 45%

$120 M

PulseGuard VVM ESD Suppressors

Coating Substrate
Voltage Variable Material

The Gap

Tin Plating

Lowest Capacitance (0.050pF) Uses polymer voltage variable material (VVM) instead of electroceramic of MLVs Supplements the on-board TVS protection of ICs and ASICs

Nickel Plating Copper Plating

PulseGuard VVM ESD Suppressors

Controlling PulseGuard 1) Change VVM formula 2) +/- width of electrodes 3) +/- width of gap Voltage Variable Material Polymer binder + Metallic particles + Semiconductor particles

Polymer binder

Electrode Width Cu/Ni Electrode Metallic particle Cu/Ni Electrode Semiconductor particle

The Gap

PulseGuard VVM ESD Suppressors

Voltage (V)

Trigger Voltage: The voltage level at which the ESD suppressor turns on; has to be coordinated with existing on-chip protection

Coordination Achieved

TRIGGER
IC is too sensitive

TRIGGER VOLTAGE must be below the sensitivity level of the chip to be protected
Time (ns)

CLAMP

Clamping Voltage: The voltage that the circuit is subjected to from the ESD pulse, after the ESD suppressor turns on

CLAMPING VOLTAGE must be below the withstand voltage of the chip to be protected

PulseGuard VVM ESD Suppressors

Feature Surface Mountable
Low Capacitance Low Leakage Current Benefit
Compatible with pick-and-place technologies, and reflow and wave solder processes.

< 1pF (0.055 pF); PulseGuard does not interfere with high speed signals.
< 100 pA; PulseGuard pulls virtually no current from battery in portable applications, does not interfere with high input impedance circuits.

Configurability

Minimizes new product lead-time. Custom products can be turned around quickly.

PulseGuard VVM ESD Suppressors

0603/0805 Single line

SOT 23 Dual line

CA10 8 line

Target Applications
Computer
Desktop Laptops/Notebooks Peripherals (Monitor/Display, Printer, Scanner, Plotter) Network Hardware Personal Digital Assistants (PDAs) Flat Panel Displays Digital Set Top Boxes Industrial/Process Controllers Multimedia Interface Hardware Medical and Test Equipment

Electronic

Telecom
Cell Phone Data Ports Secondary side of Network Interface Products

Target Applications
ESD Protection for signal, data and control lines
Cellular Phones PDAs Digital Cameras Printers Set-top boxes Cable Modem DSL Modem Laptop Computers

Cell Phone Digital Camera

PDA

Cable Modem

ESD Suppression Product Selection Guide

Characteristic
Technology Features Capacitance (pF) Datarate Limit (Mbps)1 Leakage Current (nA) Transient Capability Operating Voltage (VDC) Response Time (ns)

MLA, MLE, MLN Metal Oxide (ZnO) Varistor

Multilayer Varistor Industry standard sizes, inherent EMI filtering 60+ < 1.0 MLA, MLE >100 MLN < 10 ESD, EFT, 8 x 202, 10 x 1,0002 3.5 - 120 <1.0 0603, 0805 1206 1206, 4 lines

SP72x, SP05x SCR/Diodes

Silicon, semiconductor JEDEC packages, user defined reference V+/V3.0 - 5.0 1-2pf measured 100 1.0 - 2.0 ESD, EFT, 8 x 202, 10 x 1,0002 1.0 - 30 <2.0

PulseGuard
Polymer VVM Ultra-low capacitance, package flexibility <1.0 55fF measured 3,000 <1.0 ESD only 0 - 24 <1.0 0603, 0805 1206 SOT23 - 2 lines 0805-4 - 4 lines SO8 - 7 lines CA10 - 8 lines

Package Outline Options

Single line Multiple lines
1 Approximation, 2 Varies

Not available

SO16, 16PDIP- 14 lines SO8, 8PDIP - 6 lines 6 pin SOT23 - 4 lines

limits are affected by actual circuit layout by product rating, consult Suppression Products Handbook

Key Characteristics of ESD Suppressors

STRAY CAPACITANCE CONSIDERATION .... Goal is to minimize/eliminate signal distortion

Desired Digital Wave Shape

Voltage

Distorted Wave Shape

Time

LOW LEAKAGE CURRENT . Compatible with low-power portable equipment and High-Impedance analog circuits

Effect of Suppressor Capacitance

Magnitude

RS 232 IEEE 1284

USB 2.0 IEEE 1394 Ethernet

ESD

Frequency

Filter response of high capacitance suppressors can affect data waveforms Not a problem for low frequency data as the data falls within the band pass Unintended consequence of capacitance is to distort data by filtering the spectrum of the data that falls outside of the band pass

Capacitance Key: V5.5MLA0603 - 660 pF SMD Capacitor - 390 pF V18MLE0603 - 100 pF PGB0010603 - 0.05 pF

Capacitance Key: V5.5MLA0603 - 660 pF SMD Capacitor - 390 pF V18MLE0603 - 100 pF PGB0010603 - 0.05 pF

Key Characteristics of ESD Suppressors

FAST RESPONSE TIME LOW CLAMPING VOLTAGE HIGH CURRENT HANDLING .... These features give the suppressor the ability to protect
sensitive components against multiple severe ESD events
IC with Internal TVS Structures

Rs
LF ESD

TVS

SMALL SIZE

-- There are no Diodes or MOVs that can provide low capacitance in the 0603 size!!

ESD Suppressor Usage - General Overview

USB, FireWire, DSub, RJ (Ethernet), Antenna, etc ESD Suppressor(s)

AC/DC Power Input

Integrated Circuitry (To be protected)

Data/Signal Interface Human/User Interface

Examples Computer (networks, peripherals) Flat Panel Displays Personal Digital Assistants (PDAs) Cell phones, pagers Set top boxes (satellite and cable) Medical Equipment Test Instrumentation

Keyboard, Keypad, Speaker, Mouse, etc

The speed of the signals found on the interface (I/O) lines will help determine which ESD technology to use. - MultiLayer Varistors, SCR/Diodes, PulseGuard

Application Example - USB2.0 Bus

USB2.0, up to 480 Mbps
USB Port
MLV - V5.5MLA0603 Via to VBUS Plane

USB Controller
VBUS

Outside World

VBUS D+ D-

PTC - 1812L260

PGB0010603 PGB0010603

D+ D-

Signal Ground

Via to Signal Ground Plane

Via to Signal Ground Plane

Signal Ground

MLV - V5.5MLA0603 Note: ESD suppressor must be installed as close to the connector as possible to minimize overshoot

Shield/Chassis Ground

Signal Ground

SMT Avalanche Diode Application Examples

Single Port Universal Serial Bus (USB) Balanced Signal Lines
SP0502BAHT

USB Port
1812L150 SP0503BAHT

USB Controller
VBUS D+ D-

Outside World

Ground

SMT Avalanche Diode Application Examples

Dual Port Universal Serial Bus (USB) USB Ports USB Port 1
1812L150

USB Controller
VBUS 1D+

1D 6 5 4 SP0505BAHT

Outside World

3 2D+ 2D Ground

USB Port 2

Application Example - IEEE 1394b Bus

1394b, up to 1.6 Gbps
1394b Port
MLV - V33MLA1206 PTC - 1.5A, 33V VBUS Signal Ground PGB0010603 PGB0010603 PGB0010603 D+(2) D-(2) PGB0010603 D+(1) D-(1)

1394b Controller

Outside World

Shield/Chassis Ground

Signal Ground

Note: ESD suppressor must be installed as close to the connector as possible to minimize overshoot

Application Example - Infiniband Bus

Infiniband, ~ 2.5 Gbps
Infiniband 1x Connector Infiniband Controller

Gnd = Signal Ground

PGB0010603

Shield/Chassis Ground

Note: ESD suppressor must be installed as close to the connector as possible to minimize overshoot

Telecom/Datacom Application Example

Telecom Requires typical telecom protection Incoming E1/T1, xDSL, etc. lines Fuse for UL1950, etal Thyristor for overvoltage 10/100/1,000 Ethernet Requires low capacitance ESD PulseGuard for network lines PGB0010603, PGB002ST23

Cell Phone Application Example

Antenna - 800 - 1800 MHz - PGB0010603 Keypad - low speed - V9MLA0603 - V18MLN41206 I/O Connector - medium to high speed - V9MLA0603 - V18MLN41206 - PGB0010603 - PGB008CA10

Example - Set Top Box

Set Top Box Recommendations

Threat Devices Input/Output ESD Lightning Transients Power Overcurrent Overvoltage (Other) Cross AC Input X X Fuse MOV Display (Optional) X MLA, MLE,SP72X Keyboard X X MLA, MLE,SP72X Expansion Port X X PulseGuard ,SP72X PCMCIA X X PulseGuard Audio Output X MLA, MLE, SP72X RF Input X X MOV, Gas Discharge Tubes,PulseGuard RF Output X PulseGuard Video Output X MLN,MLA,PulsGuard S-Video X MLN,MLA,PulsGuard USB(2.0) X PPTC(Polymer Positive PulseGuard Temperature Coefficient) Digital Audio X MLA,PulsGuard Telephone Connection X X X Fuse Diode Bridge,Surgector

Board Layout Considerations

Minimize Distance Between the ESD Event and the ESD Suppressor Maximize Distance Between the ESD Suppressor and the I/C to be Protected Minimize Impedance between the ESD Suppressor and Ground

Component Placement Considerations

D1

D2 I/O Line

Due to fast rise time of ESD transient, lengths (trace and lead) become extremely important. They will affect the voltage that is ultimately seen by the IC to be protected.

D3 TVS

Two Key Design Parameters

Issue TVS to use Placement of TVS

Signal Ground

Solution Surface Mount; close to I/O line (D3 is small) Minimize distance to source (D1 is small)

Example of ESD Signal Attenuation

400 350 300 250

Voltage

200 150 100 50 0 10 20 30 40 50 60 70 80

Time in nanoseconds

I/O
PG

Measured at PulseGuard Measured at IC input pin

The length of the PC board trace between PG and I/O pin was approximately 3

Board Layout Considerations

Minimize Distance Between the ESD Event and the ESD Suppressor Maximize Distance Between the ESD Suppressor and the I/C to be Protected Minimize Impedance between the ESD Suppressor and Ground

Minimize Suppressor-Ground Impedance

Keep the trace lengths from the I/O line to the Suppressor and from the Suppressor to the Ground plane as short as possible Minimize bends in board traces

Minimize Suppressor-Ground Impedance

D1 D2 I/O Line Due to fast rise time of ESD transient, lengths (trace and lead) become extremely important. They will affect the voltage that is ultimately seen by the IC to be protected.

D3 TVS

Two Key Design Parameters

Issue TVS to use Placement of TVS

Signal Ground

Solution Surface Mount; close to I/O line (D3 is small) Minimize distance to source (D1 is small)