EE8407

Power Converter Systems

Graduate Course EE8407

Topic 2

Bin Wu

PhD, PEng

Professor
ELCE Department Ryerson University

Contact Info
Office: ENG328 Tel: (416) 979-5000 ext: 6484 Email: bwu@ee.ryerson.ca http://www.ee.ryerson.ca/~bwu/

Ryerson Campus
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

EE8407

Topic 2 High-Power Semiconductor Devices

Topic 2

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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High-Power Semiconductor Devices

Topic 2

Lecture Topics
Power Diode SCR Thyristor Gate Turn-Off Thyristor (GTO) Integrated Gate Commutated Thyristor (GCT) Insulated Gate Bipolar Transistor (IGBT) Switch Series Operation

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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High-Power Semiconductor Devices

Topic 2

Device Rating
V (V) 12000 10000 8000 6000 6500V/600A (Eupec)
7500V/1650A (Eupec) 6000V/3000A (ABB)

SCR

12000V/1500A (Mitsubishi)

27MVA SCR: GTO/GCT: 36MVA 6MVA IGBT:

6500V/4200A 6000V/6000A (Mitsubishi) (ABB) 4800V 5000A (Westcode)

6500V/1500A (Mitsubishi) 3300V/1200A (Eupec) 4500V/900A (Mitsubishi)

GTO/GCT

4000

2000 0 0

2500V/1800A (Fuji)

1700V/3600A (Eupec)

IGBT
1000 2000 3000 4000 5000 6000 I (A)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Power Diode

Topic 2

4500V/800A press pack and 1700V/1200A module diodes

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Power Diode

Topic 2

Heatsink Assembly
P P A B C N N (a) Diode Rectifier (b) Press pack N (c) Module Heatsink P

Vd

Press pack device: Double sided cooling Low assembly cost and high power density Preferred choice for high voltage high power applications
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor

Topic 2

4500V/800A and 4500V/1500A SCRs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor
iG
0.1I GM

Topic 2

Switching Characteristics
I GM

iT

iT
0.9 I D 0.1I D
ID

t rr
I rr 0.1I rr
Qrr

iG

vT
t

vT
VD 0.1VD Von

t don tr ton

t off
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor

Topic 2

Main Specifications
12000V/1500A SCR Thyristor
Maximum Rating Switching Characteristics
V DRM I TAVM V DRM V RRM I TAVM I TRMS

Q rr

12000V Turn-on Time t on 14 s

12000V Turn-off Time t off 1200 s

1500A
di T /dt

2360A
dv T /dt

100 A / s
V RRM I RRMS

2000V / s

7000 C

Repetitive peak off-state voltage

Repetitive peak reverse voltage Maximum rms on-state current

Maximum average on-state current t I Qrr rr rr Reverse recovery Charge 2

Part number FT1500AU-240 (Mitsubishi)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Topic 2

4500V/800A and 4500V/1500A GTOs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Topic 2

Symmetrical versus Asymmetrical GTOs

Blocking Voltage
V RRM V DRM

Type

Example
(6000V GTOs)

Applications For use in voltage source inverters with anti-parallel diodes. For use in current source inverters.

Asymmetrical GTO

V DRM 6000 V VRRM 22V V DRM 6000 V V RRM 6500 V

Symmetrical GTO

V RRM V DRM

VDRM - Maximum repetitive peak (forward) off-state voltage VRRM - Maximum repetitive peak reverse voltage

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

vT , iT

Topic 2

Switching Characteristics
vT
0.9VD
iT

0.9 I D ID 0.1I D

VD
0

0.1VD

t
iT

t don t r iG diG1 / dt
I G1M
0

t doff tf

ttail

iG

vT

0.1I G1M

0.1I G 2 M

t
IG 2M

diG 2 / dt

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Topic 2

Main Specifications
4500V/4000A Asymmetrical GTO Thyristor
Maximum Rating
V DRM V RRM
I TGQM

I TAVM

I TRMS

di G2 /dt
40 A / s

Switching Characteristics

4500V Turn-on Switching

t don 2.5 s t r 5.0 s

17V Turn-off Switching t doff 25.0 s

4000A
di T /dt
500 A / s

1000A
dv T /dt
1000V / s

1570A
di G1 /dt
40 A / s

t f 3. 0 s

On-state Voltage

VT ( on state ) 4.4V at I T 4000 A

V DRM - Repetitive peak off-state voltage V RRM - Repetitive peak reverse voltage I TGQM - Repetitive controllable on-state current I - Maximum average on-state current TAVM I RRMS - Maximum rms on-state current

Part number - 5SGA 40L4501 (ABB)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Topic 2

Integrated Gate Commutated Thyristor (GCT)

6500V/1500A Symmetrical GCT

GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor

Topic 2

GCT Classifications

Type

Anti-parallel Diode Excluded

Blocking Voltage
V RRM V DRM V RRM 0 V RRM V DRM

Example
(6000V GCT)

Applications For use in voltage source inverters with anti-parallel diodes. For use in voltage source inverters. For use in current source Inverters.

Asymmetrical GCT Reverse Conducting GCT Symmetrical GCT (Reverse Blocking)

V DRM 6000V V RRM 22V V DRM 6000V V DRM 6000V V RRM 6500V

Included Not required

V DRM V RRM

- Maximum repetitive peak forward off-state voltage - Maximum repetitive peak reverse voltage

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor

Topic 2

Switching Characteristics
vT , iT

vT
0.9VD

iT
ID
0 .9 I D

VD
0

0.1VD

0.4 I D

t t doff
tf
iT

t don t r
iG
0

iG

iG

vT

diG1 / dt

vG

diG 2 / dt

vG

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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EE8407

Integrated Gate Commutated Thyristor

Topic 2

Main Specifications
6000V/6000A Asymmetrical GCT
Maximum Rating
V DRM V RRM

I TQRM

I TAVM

I TRMS

di G2 /dt

Switching Characteristics

6000V Turn-on Switching t don 1.0 s

22V Turn-off Switching t doff 3.0 s

6000A
di T /dt

2000A
dv T /dt

3100A
di G1 /dt

t r 2 .0 s

1000 A / s

3000V / s

200 A / s

tf

- N/A

10,000 A/ s

On-state VT ( on state ) 4V at I T 6000 A Voltage V DRM V RRM - Repetitive peak off-state voltage
I TGRM I RRMS

- Repetitive controllable on-state current - Maximum rms on-state current

I TAVM

- Repetitive peak reverse voltage - Maximum average on-state current

Part number FGC6000AX120DS (Mitsubishi)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

Topic 2

1700V/1200A and 3300V/1200A IGBT modules

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

Topic 2

IGBT Characteristics
iC
G
E
IC

vG

vCE

+15V 0

VGE 5 VGE 4 VGE 3 VGE 2 VGE1

0 2V

vGE
0

90% +15V

iC
90%

VCE

10%

tdon tr

tdoff

tf

Static V-I Characteristics

Switching characteristics
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Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

EE8407

Insulated Gate Bipolar Transistor (IGBT)

Topic 2

Main Specifications
3300V/1200A IGBT
Maximum Rating Switching Characteristics
VCE IC I CM

3300V

1200A

2400A

t don
0.35 s

tr
0.27 s

t doff
1.7 s

tf
0.2 s

Saturation I CE sat 4.3V at I C 1200 A Voltage VCE - Rated collector-emitter voltage

I C - Rated dc collector current I CM - Maximum repetitive peak collector current

Part number FZ1200 R33 KF2 (Eupec)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Topic 2

Cause of Voltage Imbalance

Type Static Voltage Sharing Causes of Voltage Imbalance
I lk Device off-state leakage current
T j Junction temperature

v1

S1

t don Turn-on delay time t doff Turn-off delay time

Device

Qrr
T j

Reverse recovery charge of anti-parallel diode Junction temperature

v2

S2
Dynamic Voltage Sharing

v3

S3

Gate Driver L wire

t GDon Gate driver turn-on delay time t GDoff Gate driver turn-off delay time
Wiring inductance between the the gate driver and the device gate

Differences between series connected devices.

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Topic 2

Equal Voltage Sharing

S1, S2, S3:

v1

S1

Rs Cs

GTO, GCT or IGBT

Rv

Voltage Sharing:

v2

S2

Rs Cs

v1 = v2 = v3
Rv

in steady state

and transients
Static Voltage Sharing:

v3

S3

Rs Cs

Rv

Rv
Dynamic Voltage Sharing: Rs and Cs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Active Overvoltage Clamping
Vm

Topic 2

Active Overvoltage Clamping (AOC)

- Suitable for series IGBTs - Not applicable to GCTs
vin

Gate Signal Conditioning

S1
Rg

Amp AOC
Vm

vCE1

S2
Rg

Vm iC

vCE1 vCE 2

Gate Signal Conditioning

Amp

vCE 2

Assumption: S1 is turned off earlier than S2

t

td

VCE1 is clamed to Vm due to active clamping.

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Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Summary
Item
Maximum switch power (Device V I ) Active di/dt and dv/dt control Active short circuit protection Turn-off (dv/dt) snubber Turn-on (di/dt) snubber Parallel connection Switching speed Behavior after destruction On-state losses Switching losses Gate Driver Gate Driver Power Consumption

Topic 2

GTO
36MVA No No Required Required No Slow Shorted Low High Complex, separate High

IGCT
36MVA No No Not required Required No Moderate Shorted Low Low Complex, integrated High

IGBT
6MVA Yes Yes No required No required Yes Fast Open in most cases High Low Simple, compact Low

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Topic 2

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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