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Kuliah Elektronika Dasar

Minggu ke 4


DIODA
Jurusan Teknik Elektro
Fakultas Teknik UGM
2007
2
FUNCTION
Electrical gate
Current only flows one way

Forward biased
Current flows




Reverse biased
Blocks current

+ -
- +
3
pn junction diode I-V characteristics
-10
-5
0
5
10
15
20
-6 -5 -4 -3 -2 -1 0 1 2 3 4
Applied voltage
C
u
r
r
e
n
t


I-V characteristic
Forward Bias
Reverse Bias
Breakdown Voltage
Reverse saturation current
0.7V Switch-on
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PN CONSTRUCTION
Semiconductor material
n-type
Excess electrons
p-type
Excess holes
Join together
Depletion region
Redistribution of charge carriers
Contact potential
0.7V
5
p-type material
n-type material
SAMBUNGAN PN
Holes diffuse into the n-type and
swallow electrons
Electrons diffuse into the p-type and fill
holes
Depletion region formed
No free charge carriers
0.7V contact potential

6
FORWARD BIAS
Applied voltage above
0.7V
depletion region is
removed
charge carriers can flow
V< 0.7V V> 0.7V
P N
+
+
Depletion region
narrows as applied
voltage approaches 0.7V
Depletion Region
DAERAH DEPLESI MENYEMPIT MENGHILANG
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REVERSE BIAS
Depletion region extends
Higher voltage
Breakdown
Current flow
V< 0V
V<< 0V
+
+
DAERAH DEPLESI MELEBAR MAKIN LEBAR
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Bohr model
(I hope its not bohring)
The Bohr model is a
planetary model, where the
electron orbits the nucleus
like a planet orbits the Sun.
An electron is only allowed in
DISCRETE orbits (n=1, n=2,
n=3, etc.)
The higher the orbit, the
higher the energy of the
electron.
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PITA ENERGI SEBUAH ATOM
PITA HANTARAN
PITA VALENSI
CELAH ENERGI
INTI
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PITA ENERGI
PITA
HANTARAN

PITA VALENSI

PITA
HANTARAN

PITA VALENSI


PITA VALENSI

PITA
HANTARAN
Large Gap
No Gap
Small Gap
Semiconductors Metals Insulators
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Elektron di orbit terluar
Silicon
Tetravalent
Boron
Trivalent
Acceptor
Phosphorus
Pentavalent
Donor
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PITA ENERGI
PITA HANTARAN
PITA VALENSI
elektron
celah energi
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TERBENTUKNYA HOLE


elektron
PITA HANTARAN
ELEKTRON BEBAS
HOLE
ENERGI
TAMBAHAN
Jumlah Elektron Bebas = Jumlah Hole
PITA VALENSI
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p-type material
Semiconductor material
doped with acceptors.
Material has high hole
concentration
Concentration of free
electrons in p-type material
is very low.
n-type material
Semiconductor material
doped with donors.
Material has high
concentration of free
electrons.
Concentration of holes in
n-type material is very low.
P-N JUNCTION FORMATION
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P-N JUNCTION FORMATION
p-type material
Contains
NEGATIVELY
charged acceptors
(immovable) and
POSITIVELY charged
holes (free).
Total charge = 0
n-type material
Contains POSITIVELY
charged donors
(immovable) and
NEGATIVELY
charged free electrons.
Total charge = 0
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p-type material
Contains
NEGATIVELY
charged acceptors
(immovable) and
POSITIVELY charged
holes (free).
Total charge = 0
n-type material
Contains POSITIVELY
charged donors
(immovable) and
NEGATIVELY
charged free electrons.
Total charge = 0
What happens if n- and p-type materials are in close contact?
P-N JUNCTION FORMATION
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p- n junction formation
What happens if n- and p-type materials are in close contact?
Being free particles, electrons start diffusing from n-type material into p-material
Being free particles, holes, too, start diffusing from p-type material into n-material
Have they been NEUTRAL particles, eventually all the free
electrons and holes had uniformly distributed over the entire
compound crystal.
However, every electrons transfers a negative charge (-q) onto
the p-side and also leaves an uncompensated (+q) charge of the
donor on the n-side.
Every hole creates one positive charge (q) on the n-side and (-q)
on the p-side
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p- n junction formation
What happens if n- and p-type materials are in close contact?
Electrons and holes remain staying close to the p-n junction because
negative and positive charges attract each other.
Negative charge stops electrons from further diffusion
Positive charge stops holes from further diffusion
The diffusion forms a dipole charge layer at the p-n junction interface.
There is a built-in VOLTAGE at the p-n junction interface that prevents
penetration of electrons into the p-side and holes into the n-side.
p-type n-type
19
p- n junction current voltage characteristics
What happens when the voltage is applied to a p-n junction?
The polarity shown, attracts holes to the left and electrons to the right.
According to the current continuity law, the current can only flow if all
the charged particles move forming a closed loop
However, there are very few holes in n-type material and there are
very few electrons in the p-type material.
There are very few carriers available to support the current through the
junction plane
For the voltage polarity shown, the current is nearly zero
p-type n-type
20
p- n junction current voltage characteristics
What happens if voltage of opposite polarity is applied to a p-n junction?
The polarity shown, attracts electrons to the left and holes to the right.
There are plenty of electrons in the n-type material and plenty of holes in
the p-type material.
There are a lot of carriers available to cross the junction.
When the voltage applied is lower than the built-in voltage,
the current is still nearly zero
p-type n-type
When the voltage exceeds the built-in voltage, the current can flow through
the p-n junction
21
Diode current voltage (I-V) characteristics
(

|
.
|

\
|
= 1
kT
qV
I I
S
exp
p n
Semiconductor diode consists of a p-n junction with two
contacts attached to the p- and n- sides
I
S
is usually a very small current, I
S
10
-17
10
-13
A
When the voltage V is negative (reverse polarity) the exponential term -1;
The diode current is I
S
( very small).
0 V
When the voltage V is positive (forward polarity) the exponential term
increases rapidly with V and the current is high.
22


23
p-type material
Semiconductor material
doped with acceptors.
Material has high hole
concentration
Concentration of free
electrons in p-type material
is very low.
n-type material
Semiconductor material
doped with donors.
Material has high
concentration of free
electrons.
Concentration of holes in
n-type material is very low.
p-n junction formation
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IKATAN KOVALENT
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SILIKON DIPANASI
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DI DOPING ATOM BERVALENSI 5
ION POS
BAHAN
N
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DI DOPING ATOM BERVALENSI 3
BAHAN
P
ION NEG
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DI DOPING ATOM BERVALENSI 5
ION POS
BAHAN
N
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DI DOPING ATOM BERVALENSI 3
BAHAN
P
ION NEG
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BAGAIMANA MEMBUAT BAHAN N ?

Bahan silikon diberi doping atom bervalensi 5
(misal : pospor)
Uap pospor
Si
N
Atom pospor disebut DONOR
RUANG HAMPA
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Bahan semikonduktor jenis P

Bahan silikon diberi doping atom bervalensi 3
(misal : boron)
Uap boron
Si
P
Atom boron disebut ASEPTOR
RUANG HAMPA
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DISTRIBUSI HOLE
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TEGANGAN KONTAK
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Simbul dioda dan arah arus
Karakteristik ideal
Rangkaian ekivalen saat reverse bias
Rangkaian ekivalen saat forward bias
35
PENDEKATAN IDEAL
36
p- n diode applications:
current rectifiers

|
.
|

\
|
= 1 exp
kT
qV
I I
S
I
S

|
.
|

\
|
= 1 exp
kT
qV
I I
S
I
S
+
-
Time
Voltage
+
-
Time
Current
37
PENYEARAH
setengah gelombang
Saat forward
Saat reverse
Tegangan input
Tegangan output
0
2
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TEGANGAN DC RATA-RATA
Mengintegralkan
satu periode
}
=
t

t
2
0
sin
2
1
d V V
m DC
}
=
t

t
2
0
sin
2
d
V
V
m
DC
| |
t

t
0
cos
2
=
m
DC
V
V
( ) | |
t t
m m
DC
V V
V = = 1 1
2
2
V
DC
39
Bila ada tegangan lawan
40
Contoh rangkaian dioda
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MELIHAT DETIL
42
PENGARUH PANAS
43
GARIS KERJA (load line)
44
45
MODEL DIODA DENGAN r
D
46
DIODA TANPA r
D
47
DIODA TANPA r
D
48
1 2 3
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POWER SUPPLY
CATU DAYA
50
51
PENYEARAH
GELOMBANG PENUH
52
TRAFO TANPA CENTER TAP
(PENYEARAH BRIDGE)
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FILTER C
54
PENGARUH BEBAN R
L
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RIPLE (RIAK)
56
SUPERDIODA (PENYEARAH PRESISI)
57
CLIPPER (PEMANGKAS)
V
in
: tegangan sinus
V
out

V
in

D
1

D
2

L
+
L
-
58
PR
V
in
adalah tegangan kotak 10 Volt
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PENGGESER DAN PENGARUH R
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PENGGANDA TEGANGAN
TEGANGAN PADA D1
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PENGHASIL TEGANGAN GANDA
(DUAL SUPPLY)