Unijunction Transistor

UJT

UJT Equivalent Circuit

UJT Equivalent Circuit Details

RB1 - Internal dynamic resistance of the Si bar between B1 & emitter junction. This resistance is variable because its value depends upon the bias voltage across the pn junction RB2 - Internal dynamic resistance of the Si bar between B2 & emitter junction The pn junction is represented in the emitter by a diode D

UJT Equivalent Circuit Details

1. With no voltage applied to the UJT, the interbase resistance is given by

whose value lies b/w 4 k & 10 k 2. If a voltage VBB is applied b/w the bases with emitter open (IE =0), the voltage across RB1 is

UJT Equivalent Circuit Details

3. Intrinsic Stand-off Ratio ()

whose value usually lies between 0.51 & 0.82 Therefore voltage across RB1, V1 = VBB with IE = 0

UJT Characteristic Curve

Peak Point Voltage Equation

UJT Characteristic Curve for different VBB Values

Cont

Application of UJT
Used as a trigger device for SCR & triacs Used as Non-sinusoidal oscillator Used as Sawtooth generator Used in phase control & timing circuits

UJT Relaxation Oscillator

UJT Relaxation Oscillator

Waveforms for UJT Relaxation Oscillator

UJT Relaxation Oscillator

Condition for Turn ON UJT Condition for Turn OFF UJT

UJT Relaxation Oscillator

Reference
Electronic Devices & Circuits by David A Bell Electronic devices by Floyd