computed by
the
MULTI SCALE MODELING ON WCS,
DESIGNING THE FRAMEWORK FOR
NANO RFID
• Micro level MEMS based devices to Macro level calculations of
abstraction layer. To study the effect of Nano scaled devices
Modeling needs to be optimized so that different Levels of
abstraction can be taken in account
• 1. Sub 30 nm Nano scale (and their effects)
• 2. 30-100 nm Nano scale
• 3. Over 100 nm Nano Scale
• 4. Over 1000 nm Macro Level
• Inductance of straight line strip which is the most
common type of MEMS Inductors
• Nano composite are poised to be the most important
application
• Higher inductances can be achieved using spiral
inductors.
• We know as that in RF and microwave circuits, the
inductors are commonly used well below their self-
resonance frequency.
Output of the Multi scale
modeling computations.
# include < pvm / pvm3 . h >
# include < stdio. h >
in t m a in (){
in t ID , p s1 ID , p s2 ID , p s3 ID ,
p s4 ID ;
p rin tf(" M a ste r Pro ce ss ID :
% x - Status : running\n " ,
p vm _m ytid ());
if(( p s1 ID =
p vm _sp a w n (" n a n o S ca le " ,
( char * * ) 0 , 0 , " " , 1 , &ID )) == 1 )
p rin tf(" Pro ce ss o n e
sta rte d . ID : t% x\n " , ID ); p rin tf(" ca n t
sta rt p ro ce ss fo u r" ); p vm _exit();
re tu rn 0 ;}
• Reliability of RFID based Nanotech systems will
depend on many factors where multi scale
modeling will play the most important role where
we needs to correlate things from different
abstraction layers to accurately predict aspects of
reliability.
CONCLUSION AND FUTURE
WORK
• Thus we have addressed the main issues of
Nano RFID that remains the major challenge
for their practical implementation
• We have shown the modeling of transponders,
antenna and components of RFID that are
recently proposed
• Aspects of our library for Nano RFID have been
shown where abstraction and multi scale
modeling are covered.
• We have modeled the current Nano-RFID under
the current tools available as to unify the
research going in RFID in the last decade.
HPC will benefit multi scale modeling and will
help in realization of true limits of this
technology.