Book topics:
2.1, 2.2, 2.3,2.4
N-type material:
If pure silicon (intrinsic semiconductor) is doped with
a small amount of group-v elements such as
phosphorus, arsenic or antimony, each atom of
dopant forms a covalent bond within the silicon lattice
leaving a loose electron.
These loose electron greatly increase the conductivity
of the materials.
When silicon is lightly doped, the resultant material is
referred to as n-type semiconductors.
When it is heavily doped, material is referred to as n+
-type semiconductor.
P-type material:
If pure silicon is doped with a small amount of groupiii elements, such as boron, gallium or indium, a
vacant location called a hole is introduced into the
silicon lattice.
These holes greatly increase the conductivity.
When silicon is lightly doped with impurity such as
boron, the resultant material is called p-type
semiconductor.
When it is heavily doped, it is referred to as p+ type
semiconductor.
Diode characteristics
A diode is two terminal p-n junction device and a p-n
junction is normally formed by alloying, diffusion and
epitaxial growth.
Semiconductor devices are formed from junctions of
dissimilar materials.
P-N junctions, and also P-i-N devices with an internal
intrinsic layer are suitable for power diodes.
The current rating depends on area (current density!)
The voltage rating depends on the depth of the doped
regions.
++++++
++++++
______
______
Contact
Depletion region
+V
+ + ++
++
++
++ + +
+ + ++
++
++
++ + +
_________
_________
-V
+ + ++
++
++
++ + +
+ + ++
++
++
++ + +
_________
_________
Diffusion region
Breakdown region
Reverse voltage is high (usually with a magnitude
greater than 1000V).
Magnitude of reverse voltage exceeds a specified
voltage known as the breakdown voltage, VBR
IR increases rapidly with a small change in reverse
voltage beyond VBR.
The operation in this region will not be
destructive provided that the power dissipation is
within a safe level that is specified in the
manufactures data sheet.
1
1
1
+
2
2
2
Equating values:
2
/
If is negligible as compared to , than
=
2
/
and