Bridging Theory in

Transferring Technical Knowledge

Practice
to Practical Applications

MOSFETs, High Side Drivers,

and Low Side Drivers

MOSFETs, High Side Drivers,

and Low Side Drivers
Gate

Source

Source

Source

Gate

n epi
n+ substrate
Drain
Blocking State

Source

n epi
n+ substrate
Drain
Conducting State

MOSFETs, High Side Drivers,

and
Low
Side
Drivers
Intended Audience:
Electrical engineers with a knowledge of simple electrical circuits
A basic understanding of thermal design is required
A simple, functional understanding of capacitive and inductive
loads is assumed

Topics Covered:
What is a MOSFET, a High Side Driver, and a Low Side Driver?
How do you select a MOSFET with the correct on-resistance (R dson)?
How does capacitive load in-rush current affect designs?
What precautions need to be taken with an inductive load?

Expected Time:
Approximately 90 minutes

MOSFETs, High Side Drivers,

and
Low Side Drivers
Introduction
MOSFET Review
Low Side, High Side, and H-Bridge Drivers
PROFET Introduction
HITFET Introduction

Selecting the Correct Rdson

Static Operation
Dynamic Operation and the Impact of Switching Losses

Capacitive Load In-Rush Current

Switching Off an Inductive Load

Metal Oxide Semiconductor

FieldPower
Effect
Transistor
Vertical Power MOSFET
Vertical
MOSFET

Integrated Circuit Process

Transistor Process

(n-channel)

(n-channel)
Source

Gate

n+

Source

n+

p+

Source

Source

n+

n+

p+
p+

p+

n-

n+
pDrain

p+
n-

n-

nn+

Gate

Drain

Ground

p+
n-

MOSFET
Regions of Operation

A positive (for N-Channel) or negative (for P-Channel)

VGS produces a conducting channel between the Drain
and Source
The MOSFET is then able to operate in two regions:

IDS

VGS increases

1) Linear region: The MOSFET behaves like a resistance.

2) Saturation region: The MOSFET behaves like a current
VDS = VGS-VT
source.

VDS

VGS > 0V
N-Channel
MOSFET
(NMOS)

MOSFET Breakdown
The breakdown voltage, V(BR)DSS, is the voltage at which
current will begin to flow from drain-source in OFF-state
due to avalanche breakdown process
For Drain-Source voltages above V(BR)DSS, significant
current can flow through the MOSFET, even when it is
turned off
V(BR)DSS
ID

Drain

Electrical
Characteristic

Symbol Condition Minimum

Gate
Drain-to-Source
Breakdown Voltage

V(BR)DSS

VGS = 0V
ID = 1mA

Source

25V

Low Side Drive (LSD)

Configuration
14V

Load
MOSFET
Switch
14V

ILOAD

VD ~ 0V

The switch is
between the
load and ground

To turn on the LSD, the MOSFET

gate is pulled high
With the MOSFET turned on, the
drain of the MOSFET is at near
ground potential
Current flows and the load
turns-on

High Side Drive (HSD)

Configuration The switch is
MOSFET
Switch

14V

between the
load and supply
To turn on the HSD, the MOSFET
gate is pulled high

14V
VGS ~ 5V

VS ~ 9V
ILOAD

Load

The drain and gate are assumed to

Be at the same potential causing
VGS=VDS. The high value of VDS puts
the device into the saturation
Region and results in a a small
ILOAD.

High Side Drive (HSD)

Configuration
MOSFET
Switch

14V

The switch is
on the HIGH
side of the load

Tothe
turn
on the HSD,
the
MOSFET
If
MOSFET
gate is
pulled
to
is pulled
high
agate
higher
voltage
than supply

28V
VGS ~ 14V

VS ~ 14V
ILOAD

Load

The source voltage can now rise

to approximately Vsupply
The high value of VGS (and low
VDS) translates into a large value
of ILOAD (linear region)

Low Side Drivers vs.

High Side Drivers

In a Low Side Drive configuration:

+ More robust with simple ground
+ Simpler, lower price driver
- 2 wires in system
- Short to ground can destroy load
- Possible load corrosion (connected to VSUPPLY)
In a High Side Drive configuration:
+ 1 wire in system
+ Short to ground can not destroy load
+ Load corrosion unlikely (connected to GND)
- Less robust with distributed ground
- More complex, higher price driver

H-Bridge Configuration
14V

14V

CW

CCW

The load is placed

in the middle of a
H configuration
CCW

Load

CW

H-Bridge Configuration
14V

The load is placed

in the middle of a
H configuration

14V

CCW

28V
A

To turn the load on

in one direction,
CW is pulled high
CCW

Load

A14V

H-Bridge Configuration
14V

The load is placed

in the middle of a
H configuration

14V

CW

28V
B
To turn the load on
in one direction,
CW is pulled high

14V
B

Load

CW
To turn on in the
other direction,
CCW is pulled high

PROFETs = PROtected FETs

Integrated
Charge Pump

Diagnostics

Short Circuit
Protection

Over
Voltage
Protection

Reverse
Battery
Protection

MOSFET

Current Limit

PROFET

Over
Temperature
Protection

PROFET - Block Diagram

HITFETs =Highly Integrated,

Temperature
protected
FETs
Diagnostics
Short Circuit
(Requires external
Components)

Over
Voltage
Protection

Current Limit

MOSFET

HITFET

Protection

Over
Temperature
Protection

HITFET - Block Diagram

VSUPPLY

MOSFETs, High Side Drivers,

and Low Side Drivers
Introduction
MOSFET Review
Low Side, High Side, and H-Bridge Drivers
PROFET Introduction
HITFET Introduction

Selecting the Correct Rdson

Static Operation
Dynamic Operation and the Impact of Switching Losses

Capacitive Load In-Rush Current

Switching Off an Inductive Load

Basic Power Equations

Power Dissipation (switch applications in linear
region)

PD = I2Rdson
Thermal Impedance

Zthja = Zthjc + Zthca

Junction Temperature

Tjunction = Tambient + PDZthja

Rdson Equations
Rearranging, the equations yield:

I Load

Rdson

T junction Tambient
Z thja Rdson

T junction Tambient
2

I load Z thja

Parameters Affecting Rdson

Selection
Typically, the following parameters are set by
the device:
Tjunction,max

- Usually 150C

Rdson
- Function of the silicon die and
package
Zthjc
- Function of the package type
(and die size)
Typically, the following parameters are set by
the application:
Tambient
- Usually 85C, 105C, or 125C

Datasheet Parameters
Affecting Rdson Selection

Rdson Selection
Example Calculation
14V

Rdson

Tambient = 85C
SOT-223 Package
Zthja= 82C/W
To find Iload, initially assume
Rdson is 0

Iload

R = 3

I load

Vbatt 14V

4.67 A
Rload 3

Rdson Selection
Example Calculation
R
can now be calculated for
14V

dson

different Tjunction,max

Rdson

Iload

Tjunction,max - Tambient
Iload2 Z thja

R dson

150C 85C

= 36m
2
( 4.67 A ) ( 82C / W )

R dson

125C 85C

= 22m
2
( 4.67 A ) ( 82C / W )

R = 3

SOT-223 Heatsink

82 C/W

TO-263 Heatsink

Larger Package
Larger Heatsink

Rdson Selection
Example
Calculation
R = 39C/W with 1 in
14V
thja

heatsink

Rdson can now be calculated for

different Tjunction,max

R dson

Iload

R = 3
R dson

150C 85C

4.67 A 39C / W
2

125C 85C

4.67 A 39C / W
2

76m

47m

Rdson vs. Package

and Heatsink
Package and
Heatsink

Rdson at
Tjunction,max =125C

Rdson at
Tjunction,max =150C

SOT-223 (0.5 in2)

22 m

36 m

TO-263 (1 in2)

47 m

76 m

Rthja for Various Packages

SO8

TO-252

SOT-223

TO-263

MOSFETs, High Side Drivers,

and Low Side Drivers
Introduction
MOSFET Review
Low Side, High Side, and H-Bridge Drivers
PROFET Introduction
HITFET Introduction

Selecting the Correct Rdson

Static Operation
Dynamic Operation and the Impact of Switching Losses

Capacitive Load In-Rush Current

Switching Off an Inductive Load

Impact of Approximate FET

Switching Loss

1.0
0.8
0.6
0.4
0.2
0.0

0.0

0.2

0.4

Time

0.6

0.8

1.0

All values normalized

PROFET Switching Loss

Lamp Turn-On

Current response
approximately
piece-wise linear

6m HSD
Vsupply=13.5V
Load=60W bulb
D=0.5, f=100Hz

time

Approximate FET
Switching Loss

For a resistive load (with a piecewise linear

current and voltage response), the approximate
FET switching loss is:

Ploss ~ (0.125)(VDSIDS)
Eloss = (Ploss)(tswitch)

PROFET Switching Loss

Approximate
Switching Energy Loss
Lamp Turn-On
Vsupply

= 13.5V

Iload

= 6.58A

Ploss,approx

= (0.125)(Vsupply)(Iload)
= (0.125)(13.5V)(6.58A) = 11.1W

tswitch

= 250s - 45s = 205s

Eloss,approx

= (tswitch)(Ploss,approx)
= (205s)(11.1W) = 2.28mJ

PROFET Switching Loss:

Lamp Turn-Off

Current response
approximately
linear

6m HSD
Vsupply=13.5V
Load=60W bulb
D=0.5, f=100Hz

PROFET Switching Loss

Lamp Turn-Off
Approximate
Switching Energy Loss
Vbb

= 13.5V

Iload

= 6.58A

Ploss,approx

= (0.125)(Vbb)(Iload)
= (0.125)(13.5V)(6.58A) = 11.1W

tswitch

= 205s - 190s = 15s

Eloss,approx

= (tswitch)(Ploss,approx)
= (15s)(11.1W) = 0.17mJ

PROFET Switching Loss:

Lamp
Turning
On
and
Off
Approximate Switching Energy Loss
Eloss on,approx = 2.28mJ

(turn-on)

Eloss off,approx = 0.17mJ

(turn-off)

Eloss,approx = 2.28mJ + 0.17mJ = 2.45mJ

(total)
Eloss,actual measurement
= 2.29mJ
(total)
% Error
% Error

= (2.45mJ 2.29mJ) / 2.29mJ

= 7.0%

Rdson Calculations for

PWM Applications

The power dissipated in a PWM application is given by:

PD = Pswitching + Pon
Pswitching

= (Fswitching)(Ploss-ontturn-on + Ploss-offtturn-off)

Ploss-off

(0.125)(VsupplyIload)

Ploss-on

(0.125)(VsupplyIload)

Pon = (Iload2)(Rdson)(tpulse-on)(Fswitching)
Tjunction
D

= Tambient + PDRthja

= (tpulse-on)(Fswitching) = (tpulse-on) / (TPeriod)

Rdson Calculations for

PWM Applications
T
-T
F
V
junction

Rdson,max

R thja

ambient

Rdson (FET more expensive)

Tjunction,max

switching

supply load

t turn-on + t turn-off

Iload2D

Rdson (FET less expensive)

Tjunction,max

Tambient

Tambient

Rthja

Rthja

Iload

Iload

D (Duty Cycle)
Fswitching
Increases
switching
Vsupply
losses
tturn-on

D (Duty Cycle)
Fswitching
Decreases
Vsupply
tturn-on

switching
losses

Rdson Selection
Example Calculation
T
13.5V

2.05

ambient,max

= 85C
= 150C
= 6.57A
=11.1W
= 155s
= 30s
= 100Hz
= 50%
= 55C/W (TO252+1in2)

Tjunction,max
Iload
Ploss
tturn-on
tturn-off
Fswitching
Duty Cycle
Rthja
Tjunction
- Tambient Fswitching VsupplyIload

Rdson

Rdson

R thja

8
Iload2D

t turn-on + t turn-off

150C - 85C 100Hz 13.5V 6.57A

155s + 30s

8
55K/W

6.57A 0.5
2

R dson 45m

MOSFETs, High Side Drivers,

and
Low
Side
Drivers
Introduction
MOSFET Review
Low Side, High Side, and H-Bridge Drivers
PROFET Introduction
HITFET Introduction

Selecting the Correct Rdson

Static Operation
Dynamic Operation and the Impact of Switching Losses

Capacitive Load In-Rush Current

Switching Off an Inductive Load

Capacitive Load
In-Rush Current

Lamps and RC networks can experience

significant in-rush current when they
are initially turned on
When a lamp initially turns on, the
filament is cold, and has a relatively low
resistance
23.2
As the filament warms up, the resistance
increases dramatically (often by an order
In
Out
of magnitude)
3.6mF

2.80

Capacitive Load
In-Rush
Current
Lamps and RC networks can experience

significant in-rush current when they are

initially
turned
on may be 10 times the static
The
in-rush
current
(DC) current
5.5A

600mA

Standard Current Limiting

When the load resistance is lower than expected,
PROFETs/HITFETs can go into a protective current limiting
mode

Current limiting is considered a FAULT condition devices are

not designed for prolonged use in this mode of operation
Care must be taken to keep in-rush current levels below the
devices current limit threshold

Lamp In-Rush Current Example

Input voltage
Sense signal

Drain-source voltage

Estimated average power during in-rush (30W)

27W lamp in rush current

Driver Pdiss=Vds*Iload

Zthja Chart for Lamp

In-Rush Current Example

Single Pulse
2.0C/W

~3msec

Lamp In-Rush Current

Example Calculations
Approximate junction temperature increase (using
Zth diagram and estimated rectangular average inrush power)
tin-rush

3msec

Zthja

2.0C/W

Ploss,ave 30W (estimated from oscilloscope)

Tjunction = ZthjaPloss
= (2.0C/W)(30W) = 60C

MOSFETs, High Side Drivers,

and Low Side Drivers
Introduction
MOSFET Review
Low Side, High Side, and H-Bridge Drivers
PROFET Introduction
HITFET Introduction

Selecting the Correct Rdson

Static Operation
Dynamic Operation and the Impact of Switching Losses

Capacitive Load In-Rush Current

Switching Off an Inductive Load

Switching OFF an
OFF
Inductive Load
With inductive loads (for example coils and valves),
additional switching losses can occur during turn off
According to Lenzs Law:
The electromotive force (voltage) and the induced
current in an inductor are in a direction as to tend
to oppose the change that produced them
Therefore at turn off, the voltage at the output of
the high side driver becomes negative to oppose
the decreasing inductor current.

Switching OFF an Inductive

Load
Prior to the PROFET being turned on....
Vbb

VIN

VIN
VON

VOUT

VOUT

IL

Switching OFF an Inductive

Load

Initially, the FET is turned on, and IL

begins to increase
Vbb

VIN
VON

VIN

VOUT

VOUT

IL

IL

Switching OFF an Inductive

Load
Eventually, IL reaches its DC value
Vbb

VIN
VON

VIN
HIGH

VOUT

VOUT

IL

IL

Switching OFF an Inductive

Load

At some point, the FET is turned off

Vbb

VIN
VON

VIN

VOUT

VOUT

IL

IL

Switching OFF an Inductive

Load

VOUT goes below GND. The zener eventually conducts

and supplies gate charge to turn on the FET, clamping
VOUT at a "safe"
Vbb voltage.
VIN

VON

VIN

VOUT
VON(CL)

VOUT

IL

IL

Switching OFF an Inductive

Load

When IL 0A, VOUT will return to GND

potential V
bb

VIN
0V

VIN

VON

VOUT

VOUT

IL

Safely Clamping VOUT

for Inductive Loads

If VOUT was not clamped, its magnitude would increase to

the point of the MOSFET avalanche breakdown voltage

Vbreakdown

Clamping VOUT Increases the

Clamping
V
to a safe
value (below avalanche)
increases the
Maximum
Inductor
Energy
maximum energy which can be dissipated in the driver during turn
OUT

Absorbable Inductor
Energy (mJ)

off

Silicon Area (mm2)

Maximum Safe Inductor

Energy
The maximum safe inductive energy which can be
dissipated in the FET is found in the maximum ratings
section:

The clamping voltage is in the electrical characteristics:

Energy Absorbed When

Turning Off an Inductive
Load
Maximum load
inductance for a
single switch off

Tj = 150C
Vsupply = 12V
RLOAD = 0

Energy Absorbed When

The energy
absorbed
by the high side
driver when
Turning
Off
an Inductive
Load
an inductive load is turned off (Eloss) is equal to:
Eloss = ESUPPLY + EL - ER
Where:
ESUPPLY is the energy delivered to the MOSFET from
the battery
EL is the energy delivered to the MOSFET from the
inductance (EL ~ LIL2/2)
ER is the energy dissipated by the inductor due to
internal self-heating

Energy Absorbed When

Off
an
Inductive
Load
Turning
This becomes a differential equation:
Eloss = ESUPPLY + EINDUCTANCE - EESR = VON(CL)*iL(t)
dt
The solution to this equation
can
be

LIL
ILRL

approximated
for +RVLOUT(CL)
> 0
Eloss =
VSUPPLY
ln 1+
2RL

VOUT(CL)

What Can Go Wrong?

Protected FET die after the maximum dissipated
energy is exceeded due to switching off an
inductive load

Driving a FET with a PWM

Input14V
Note: Generally,
inductive loads are
not PWM driven
due to the repetitive
clamping energy /
power.

Source

Gate

n+

Source

n+

p+

p+
nn+

Load
Drain

Turning Off an Inductive Load

MOSFET is turned off
Vsupply = 12V

VIN

VON

VOUT

L=630H
IL=9.5A

VIN

Turning Off an Inductive Load

VOUT = Vsupply - VAZ
VOUT = 12V 42V = -30V
VAZ ~ VDS = VON
Vsupply = 12V

VAZ
VIN

VON

VOUT

L=630H
IL=9.5A

VIN
VAZ = 42V
VON

Vsupply = 12V

Turning Off an Inductive Load

VIN

VOUT clamped to -30V

VAZ = 42V

Vsupply = 12V

VIN

VON

Vsupply = 12V

VON
IL
VOUT

L=630H
IL=9.5A

di/dt = VOUT / L

toff = L * IL / VOUT
toff = (630H)(9.5A) / 30V
toff = 200s

Turning Off an Inductive Load

Area under the Ploss curve is
the dissipated energy

VAZ = 42V

Vsupply = 12V

VIN

VIN

VON

Vsupply = 12V

VON
IL
VOUT

L=630H
IL=9.5A

Ploss

di/dt = VOUT / L
toff = 200s
Eloss

Ploss,avg VAZ * IL,max / 2 = (42V)(9.5A) / 2

Ploss,avg 200W
Eloss (Ploss)(toff) = 40mJ

Low Side Drivers and

Inductive
Loads
MOSFETs and HITFETs can also be used to drive

inductive loads in a low side configuration.

The low side configuration, however, results in a
positive voltage spike at the output
VSUPPLY

VIN

VSUPPLY
Negative
Voltage
Spike

Positive
Voltage
Spike

VOUT

VOUT
VIN

Switching an Inductive Load

Initially, the MOSFET is turned on and IL reaches
its DC value
VSUPPLY

VIN

IL
VOUT

VOUT

VIN

IL
IL

Switching an Inductive Load

At some point, the FET is turned off
VSUPPLY

VIN

IL
VOUT

VOUT

VIN

IL
IL

Switching an Inductive
Load
goes above V
as the inductor current
V
OUT

SUPPLY

goes to 0A.

VSUPPLY

VIN

IL
VOUT

VOUT

VIN

IL
IL

Switching an Inductive Load

When IL = 0A, VOUT returns back to VSUPPLY
VSUPPLY

VIN

IL
VOUT

VOUT

VIN

IL
IL

MOSFETs, High Side Drivers,

and
Low
Side
Drivers
Introduction
MOSFET Review
Low Side, High Side, and H-Bridge Drivers
PROFET Introduction
HITFET Introduction

Selecting the Correct Rdson

Static Operation
Dynamic Operation and the Impact of Switching Losses

Capacitive Load In-Rush Current

Switching Off an Inductive Load

MOSFETs, High Side Drivers,

and Low Side Drivers
Gate

Source

Source

Source

Gate

n epi
n+ substrate
Drain
Blocking State

Source

n epi
n+ substrate
Drain
Conducting State

Thank You!
www.btipnow.com