Introduction to FETs

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Current Controlled vs Voltage Controlled Devices

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Types of FETs
JFET Junction Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect
Transistor
D-MOSFET - Depletion Mode MOSFET
E- MOSFET - Enhancement Mode MOSFET

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Transfer Characteristics
The input-output transfer characteristic of the JFET is not as straight
forward as it is for the BJT
In a BJT, (hFE) defined the relationship between IB (input current) and IC
(output current).
In a JFET, the relationship (Shockleys Equation) between VGS (input
voltage) and ID (output current) is used to define the transfer characteristics,
and a little more complicated (and not linear):

VGS
ID = IDSS 1
V
P

As a result, FETs are often referred to a square law devices

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JFET Construction
TherearetwotypesofJFETs:nchannelandpchannel.
Thenchannelismorewidelyused.

Therearethreeterminals:Drain(D)andSource(S)areconnectedtonchannel
January2004Gate(G)isconnectedtotheptypematerial
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JFET Operating Characteristics

There are three basic operating conditions for a JFET:
JFETs operate in the depletion mode only
A. VGS = 0, VDS is a minimum value depending on IDSS and the
drain and source resistance
B. VGS < 0, VDS at some positive value and
C. Device is operating as a Voltage-Controlled Resistor
For an n channel JFET, VGS may never be positive*
For an p channel JFET, VGS may never be negative*

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Specification Sheet (JFETs)

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N-Channel JFET Operation

The nonconductive depletion region becomes thicker with increased reverse bias.
(Note: The two gate regions of each FET are connected to each other.)

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N-Channel JFET Symbol

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Saturation

At the pinch-off point:

any further increase in VGS does not produce any increase in ID. VGS at
pinch-off is denoted as Vp.
ID is at saturation or maximum. It is referred to as IDSS.
The ohmic value of the channelisatmaximum.

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ID IDSS

AsVGSbecomesmorenegative:
theJFETwillpinchoffatalowervoltage(Vp).
IDdecreases(ID<IDSS)eventhoughVDSisincreased.
EventuallyIDwillreach0A.VGSatthispointiscalledVporVGS(off).
AlsonotethatathighlevelsofVDStheJFETreachesabreakdownsituation.
IDwillincreasesuncontrollablyifVDS>VDSmax.

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FET as a Voltage-Controlled Resistor

Theregiontotheleftofthepinchoffpointiscalledtheohmic
region.
rd =
TheJFETcanbeusedasavariableresistor,whereVGScontrols
thedrainsourceresistance(rd).AsVGSbecomesmorenegative,
theresistance(rd)increases.

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ro
VGS
1

VP

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Transfer (Transconductance) Curve

From this graph it is easy to determine the value of ID for a given value of VGS
It is also possible to determine IDSS and VP by looking at the knee where VGS is 0

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Plotting the Transconductance Curve

Using IDSS and VP (or VGS(off)) values found in a specification sheet, the Family of Curves
can be plotted by making a table of data using the following 3 steps:
Step 1:

VGS
ID = IDSS 1
VP

Solve

for VGS = 0V

Step 2

VGS
ID = IDSS 1
VP

Solve

Step 3:
Solve

VGS
ID = IDSS 1
VP

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for VGS = VP ( aka VGS(off) )

for 0V VGS VP in 1V increments for VGS

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Case Construction and Terminal Identification

Thisinformationisfoundonthespecificationsheet

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p-Channel JFETs

pChannelJFEToperatesinasimilarmannerasthenchannelJFETexceptthevoltage
polaritiesandcurrentdirectionsarereversed

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P-Channel JFET Characteristics

As VGS increases more positively

the depletion zone increases
ID decreases (ID < IDSS)
eventually ID = 0A
Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases
uncontrollably if VDS > VDSmax.

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MOSFETs

MOSFETs
MOSFETs have characteristics similar to JFETs and additional
characteristics that make then very useful
There are 2 types of MOSFETs:
Depletion mode MOSFET (D-MOSFET)
Operates in Depletion mode the same way as a JFET when VGS 0
Operates in Enhancement mode like E-MOSFET when VGS > 0
Enhancement Mode MOSFET (E-MOSFET)
Operates in Enhancement mode
IDSS = 0 until VGS > VT (threshold voltage)

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MOSFET Handling
MOSFETs are very static sensitive. Because of the very thin SiO 2 layer between
the external terminals and the layers of the device, any small electrical
discharge can stablish an unwanted conduction.
Protection:
Always transport in a static sensitive bag
Always wear a static strap when handling MOSFETS
Apply voltage limiting devices between the Gate and Source, such as back-toback Zeners to limit any transient voltage

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D-MOSFET Symbols

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Specification Sheet

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Depletion Mode MOSFET Construction

TheDrain(D)andSource(S)leadsconnecttothetondopedregions
TheseNdopedregionsareconnectedviaannchannel
ThisnchannelisconnectedtotheGate(G)viaathininsulatinglayerofSiO2
Thendopedmaterialliesonapdopedsubstratethatmayhaveanadditionalterminal
connectioncalledSS

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Basic Operation
A D-MOSFET may be biased to operate in two modes:
the Depletion mode or the Enhancement mode

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D-MOSFET Depletion Mode Operation

The transfer characteristics are similar to the JFET

In Depletion Mode operation:
When VGS = 0V, ID = IDSS
When VGS < 0V, ID < IDSS
2
When VGS > 0V, ID > IDSS
VGS

ID = IDSS 1
The formula used to plot the Transfer Curve, is:
VP

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D-MOSFET Enhancement Mode Operation

EnhancementModeoperation
Inthismode,thetransistoroperateswithVGS>0V,andIDincreasesaboveIDSS
Shockleysequation,theformulausedtoplottheTransferCurve,stillappliesbutVGSis
2
positive:
VGS

ID = IDSS 1
VP

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p-Channel Depletion Mode MOSFET

ThepchannelDepletionmodeMOSFETissimilartothenchannelexceptthatthe
voltagepolaritiesandcurrentdirectionsarereversed

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Enhancement Mode
MOSFETs

n-Channel E-MOSFET showing channel length L and

channel width W

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Enhancement Mode MOSFET Construction

TheDrain(D)andSource(S)connecttothetondopedregions
Thesendopedregionsarenotconnectedviaannchannelwithoutanexternalvoltage
TheGate(G)connectstothepdopedsubstrateviaathininsulatinglayerofSiO2
Thendopedmaterialliesonapdopedsubstratethatmayhaveanadditionalterminal
connectioncalledSS

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Specification Sheet

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E-MOSFET Symbols

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Basic Operation
The Enhancement mode MOSFET only operates in the enhancement mode.

VGS is always positive

IDSS = 0 when VGS < VT
As VGS increases above VT, ID increases
If VGS is kept constant and VDS is increased, then ID saturates (IDSS)
The saturation level, VDSsat is reached.

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Transfer Curve

ID(on)
2
(VGS(ON) - VT)2
To determine ID given VGS: ID = k (VGS - VT)
where VT = threshold voltage or voltage at which the MOSFET turns on.
k = constant found in the specification sheet
The PSpice determination of k is based on the geometry of the device:
k=

k =

KP

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where KP = N COX

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p-Channel Enhancement Mode MOSFETs

ThepchannelEnhancementmodeMOSFETissimilartothenchannelexceptthatthe
voltagepolaritiesandcurrentdirectionsarereversed.

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Summary Table
JFET

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D-MOSFET

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E-MOSFET

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