ION IMPLANTATION

Deposit dopants into silicon wafer.

Beam of impurity ions is accelerated to the surface of

wafer.

Projected range: average penetration depth

Ion Implantation System

RANGE THEORY

ION STOPPING

Total Stopping power;

S=()nuclear+()electronic

Nuclear stopping caused by collision b/w two atoms.

Columbic potential
Vc(r)=

Electrons screen the nuclear charge, so potential

V(r)=Vc(r) Fs(r)
Fs(r)=a+b- screening function

Energy lost by ion

T(p)=E sin2

Energy loss to nuclear collision;

Sn=N

Electron stopping is caused by interaction with electrons of

target

Lindhard and scharff expression;

Experimentally, predicts correct trend ,but as ion number

increases oscillations occur.

Empirical correction;

Electronic stopping is inelastic